Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.

Abstract: A layout pattern for magnetoresistive random access memory (MRAM) includes: a first magnetic tunneling junction (MTJ) pattern on a substrate; a second MTJ pattern adjacent to the first MTJ pattern; and a first metal interconnection pattern between the first MTJ pattern and the second MTJ pattern, wherein the first MTJ pattern, the first metal interconnection pattern, and the second MTJ pattern comprise a staggered arrangement.

Abstract: A method for fabrication a nanosheet device includes providing forming a stacked layer on a substrate, having first material layers and second material layers in different materials, alternatingly stacked up. The stacked layer is patterned to a stacked fin. A dummy stack is formed on the stacked fin. An etching back process is performed with the dummy stack with spacers to etch the stacked fin and expose the substrate. Laterally etches the first material layers and the second material layers, to have indent portions. Inner spacers fill the indent portions. A first/second source/drain layer is formed on the substrate at both sides of the dummy stack. Etching process is performed to remove the dummy gate of the dummy stack and the selected one of the first material layers and the second material layers between the inner spacers. Metal layer fills between the spacers and the inner spacers.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first well in the substrate on the first region and a second well in the substrate on the second region; removing part of the first well to form a first recess; and forming a first epitaxial layer in the first recess.