Patents by Inventor Chuen-Guang Chao

Chuen-Guang Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7960258
    Abstract: The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.
    Type: Grant
    Filed: May 9, 2008
    Date of Patent: June 14, 2011
    Assignee: National Chiao Tung University
    Inventors: Chuen-Guang Chao, Jung-Hsuan Chen, Ta-Wei Yang
  • Publication number: 20110059568
    Abstract: The present invention discloses a method for fabricating a nanoscale thermoelectric device, which comprises steps: providing at least one template having a group of nanoscale pores; forming a substrate on the bottom of the template; injecting a molten semiconductor material into the nanoscale pores to form a group of semiconductor nanoscale wires; removing the substrate to obtain a semiconductor nanoscale wire array; and using metallic conductors to cascade at least two semiconductor nanoscale wire arrays to form a thermoelectric device having a higher thermoelectric conversion efficiency.
    Type: Application
    Filed: May 9, 2008
    Publication date: March 10, 2011
    Inventors: Chuen-Guang CHAO, Jung-Hsuan Chen, Ta-Wei Yang
  • Publication number: 20060049059
    Abstract: The present invention pertains to a method of manufacturing an aluminum oxide film with arrayed nanometric pores, wherein a commercial aluminum substrate is provided firstly; then the aluminum substrate is annealed and then electro-polished in order to have a mirror-like surface, and then anodized in order to form a aluminum oxide film with a plurality of nanometric pores, which are aligned in array, and then annealed in order that an oxidation reaction can happen thereon and generates oxide, which via self-diffusion, fills some of smaller pores with the pores size being uniformed; lastly a pore-widening is undertaken in order to increase the diameters of the pores. The present invention can accomplish the nanometric pores aligned in array and with an uniform pore diameter, and simultaneously have the advantages of simplified manufacturing process, easier operational control and reduced cost.
    Type: Application
    Filed: December 8, 2004
    Publication date: March 9, 2006
    Inventors: Chuen-Guang Chao, Chien-Chon Chen, Jung-Hsuan Chen, Chin-Guo Kuo