Abstract: A method to determine a process window is disclosed. First, a pattern data is provided. Second, a bias set is determined. Then, a resizing procedure is performed on the pattern data in accordance with the bias set to obtain a usable final resized pattern to be a target pattern of changed area. The final resized pattern is consistent with a minimum spacing rule, a contact to poly rule and a contact to metal rule. Accordingly, the target pattern is output.

Abstract: A method for constructing an optical proximity correction (OPC) model is described. A test pattern is provided, and the test pattern is then written on a mask. The pattern on the mask is measured to obtain a modified pattern. An OPC model is constructed according to the modified pattern.

Abstract: A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output.

Abstract: A method of verifying a layout pattern comprises separately steps of obtaining a simulated pattern at a lower portion of a film by using a layout pattern as a mask to transfer the layout pattern to the film, and obtaining a simulated pattern at an upper portion of the film by using the layout pattern as a mask to transfer the layout pattern to the film. The layout pattern is verified according to the upper and lower simulated patterns.

Abstract: A method to determine a process window is disclosed. First, a pattern data is provided. Second, a bias set is determined. Then, a resizing procedure is performed on the pattern data in accordance with the bias set to obtain a usable final resized pattern to be a target pattern of changed area. The final resized pattern is consistent with a minimum spacing rule, a contact to poly rule and a contact to metal rule. Accordingly, the target pattern is output.

Abstract: The invention provides a mask pattern. The mask pattern comprises at least a continuous pattern. Each of the continuous patterns has a first pattern, a second pattern and a set of assistance patterns. The assistant patterns are located between the first pattern to the second pattern. The first pattern, the assistant patterns and the second pattern together form a closed opening.

Abstract: A method for constructing an optical proximity correction (OPC) model is described. A test pattern is provided, and the test pattern is then written on a mask. The pattern on the mask is measured to obtain a modified pattern. An OPC model is constructed according to the modified pattern.

Abstract: A method for correcting a photomask pattern is provided. The correcting method performs a verification of a focus-exposure matrix (FEM) and an overlay variation on a layout area having contact holes or vias in a layout pattern so as to generate a hint information. The layout pattern of the photomask is corrected according to the hint information to prevent the contact holes or vias from being exposed in arrangement to corresponding metal layer, poly layer, or diffusion layer.

Abstract: A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.

Abstract: A method to selectively amend a layout pattern is disclosed. First, a layout pattern including at least a first group and a second group is provided, wherein each one of the first group and the second group respectively includes multiple members. Second, a simulation procedure and an amendment procedure are respectively performed on all the members of the first group and the second group to obtain an amended first group and an amended second group. Then, the amended first group and the amended second group are verified as being on target or not. Afterwards, the layout pattern including the on target amended first group and the on target amended second group is output.

Abstract: A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.

Abstract: A method of verifying a layout pattern comprises separately steps of obtaining a simulated pattern at a lower portion of a film by using a layout pattern as a mask to transfer the layout pattern to the film, and obtaining a simulated pattern at an upper portion of the film by using the layout pattern as a mask to transfer the layout pattern to the film. The layout pattern is verified according to the upper and lower simulated patterns.

Abstract: A method for correcting a photomask pattern is provided. The correcting method performs a verification of a focus-exposure matrix (FEM) and an overlay variation on a layout area having contact holes or vias in a layout pattern so as to generate a hint information. The layout pattern of the photomask is corrected according to the hint information to prevent the contact holes or vias from being exposed in arrangement to corresponding metal layer, poly layer, or diffusion layer.

Abstract: The invention provides a mask pattern. The mask pattern comprises at least a continuous pattern. Each of the continuous patterns has a first pattern, a second pattern and a set of assistance patterns. The assistant patterns are located between the first pattern to the second pattern. The first pattern, the assistant patterns and the second pattern together form a closed opening.

Abstract: A method for correcting a photomask pattern is disclosed. The correction method determines a layout condition according to the space and line width of a layout pattern. The layout condition is used to determine the type of optical proximity correction to be used for a layout pattern in order to generate a correction pattern, and the correction pattern is compared with a predetermined specification. Furthermore, a modified-rule optical proximity correction table is employed to correct the special layout pattern. Therefore, the fidelity correction may be easily implemented.

Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.

Abstract: A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.

Abstract: A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.

Abstract: The present invention provides a photomask comprising a substrate and a plurality of shielding patterns. The substrate comprising a plurality of shielding regions and a plurality of transparent regions, while each transparent region is disposed between two adjacent shielding regions and has one depression. The depression and the shielding region share a same edge and a sidewall of the depression is aligned with a sidewall of the shielding pattern.

Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.