Abstract: Embodiments may include methods, systems, and apparatuses for care area based swath speed for throughput and sensitivity improvement. A method may comprise receiving scan region of a die. The scan region of the die may have a first care area at a controller configured to control an inspection tool, wherein the inspection tool includes a stage having the die disposed thereon. The method may then include scanning a first portion of the scan region at a fast feed rate and the first care area at a slow feed rate. Scanning may include emitting particles in a particle beam toward the die resulting an incidence on the die. Emitting may be performed using a particle emitter. Scanning may then include detecting a portion of particles reflected from the incidence. Detecting may be performed using a detector. Scanning may then include changing a position of the stage relative to the incidence.

Abstract: Embodiments may include methods, systems, and apparatuses for care area based swath speed for throughput and sensitivity improvement. A method may comprise receiving scan region of a die. The scan region of the die may have a first care area at a controller configured to control an inspection tool, wherein the inspection tool includes a stage having the die disposed thereon. The method may then include scanning a first portion of the scan region at a fast feed rate and the first care area at a slow feed rate. Scanning may include emitting particles in a particle beam toward the die resulting an incidence on the die. Emitting may be performed using a particle emitter. Scanning may then include detecting a portion of particles reflected from the incidence. Detecting may be performed using a detector. Scanning may then include changing a position of the stage relative to the incidence.

Abstract: A wafer bonding layer and a process for using the same for bonding wafers are presented. The wafer bonding process includes providing a first wafer, providing a second type wafer and providing a water bonding layer. The wafer bonding layer is provided separately on a contact surface layer of the first or second wafer as part of a CMOS compatible processing recipe.

Abstract: An on-die voltage regulator having a suspend mode voltage generator and an active mode voltage generator. Output drivers of the active mode voltage generator are disabled in stages to reduce voltage droop when transitioning between the active mode voltage generator and the suspend mode voltage generator.