Patents by Inventor Chui Baik

Chui Baik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11744143
    Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
    Type: Grant
    Filed: August 9, 2017
    Date of Patent: August 29, 2023
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yongsuk Cho, Sangdong Kim, Chui Baik, Hyun Koo, Ohyun Kwon, Byoungki Choi
  • Patent number: 11495761
    Abstract: A photoelectric conversion device includes a first electrode and a second electrode facing each other, an organic photoelectric conversion layer between the first electrode and the second electrode, and a charge auxiliary layer between the first electrode and the organic photoelectric conversion layer. The organic photoelectric conversion layer is configured to absorb light in at least a portion of a wavelength spectrum of incident light and to convert the absorbed light into an electrical signal. The charge auxiliary layer includes a metal and an oxide. The oxide may be an oxide material that excludes silicon oxide such that the charge auxiliary layer does not include silicon oxide.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: November 8, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chui Joon Heo, Kyung Bae Park, Sung Jun Park, Sung Young Yun, Gae Hwang Lee, Chui Baik, Ji Soo Shin, Yong Wan Jin, Hye Rim Hong
  • Patent number: 11296170
    Abstract: A display panel includes a switching transistor and a light-emitting transistor. The switching transistor includes a first gate electrode, a first source electrode, a first active layer, and a first drain electrode. The light-emitting transistor includes a second gate electrode, a second source electrode, a second active layer, a light-emitting layer, and a second drain electrode. The second gate electrode is the first drain electrode of the switching transistor. The switching transistor and the light-emitting transistor may be on a substrate. The switching transistor, the second source electrode, the second active layer, the light-emitting layer, and the second drain electrode are stacked in a direction perpendicular to the surface of the substrate.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: April 5, 2022
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ajeong Choi, Yong Uk Lee, Chui Baik