Patents by Inventor Chui-Chuan Chang

Chui-Chuan Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6809341
    Abstract: A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure.
    Type: Grant
    Filed: March 11, 2003
    Date of Patent: October 26, 2004
    Assignee: Opto Tech University
    Inventors: Jung-Kuei Hsu, Hsueh-Chih Yu, Hung-Yuan Lu, Chui-Chuan Chang, Kwang-Ru Wang, Chang-Da Tsai, San Bao Lin, Yung-Chiang Hwang, Ming-Der Lin
  • Publication number: 20040178415
    Abstract: The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.
    Type: Application
    Filed: March 11, 2003
    Publication date: September 16, 2004
    Inventors: Jung-Kuei Hsu, Hsueh-Chih Yu, Hung-Yuan Lu, Yen-Hu Chu, Chui-Chuan Chang, Kwang-Ru Wang, Chang-Da Tsai, San Bao Lin, Yung-Chiang Hwang, Ming-Der Lin
  • Patent number: 6716654
    Abstract: The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.
    Type: Grant
    Filed: March 12, 2002
    Date of Patent: April 6, 2004
    Assignee: Opto Tech Corporation
    Inventors: Jung-Kuei Hsu, Hsueh-Chih Yu, Chia-Liang Hsu, Hung-Yuan Lu, Yen-Hu Chu, Chui-Chuan Chang, Kwang-Ru Wang, Chang-Da Tsai, San Bao Lin, Yung-Chiang Hwang, Ming-Der Lin
  • Publication number: 20030173602
    Abstract: The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.
    Type: Application
    Filed: March 12, 2002
    Publication date: September 18, 2003
    Inventors: Jung-Kuei Hsu, Hsueh-Chih Yu, Chia-Liang Hsu, Hung-Yuan Lu, Yen-Hu Chu, Chui-Chuan Chang, Kwang-Ru Wang, Chang-Da Tsai, San Bao Lin, Yung-Chiang Hwang, Ming-Der Lin