Abstract: This application is directed to methods and devices for an efficient power amplification system. An electronic device includes a first and a second power amplifier that are coupled to a quadrature combiner, a temperature monitoring circuit coupled to the first and second power amplifiers, and a controller coupled to the temperature monitoring circuit. The temperature monitoring circuit is configured to determine a temperature difference between the first and second power amplifiers. The controller is configured to adjust operation of at least one of the first and second power amplifiers to reduce the temperature difference between the first and second power amplifiers.

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.