Abstract: A vacuum pump controller and a method of making a devise using the same are presented. The vacuum pump controller comprises detectors for detecting whether a cassette is present in a semiconductor processing load lock; and controllers for sending control signals to a vacuum pump to control the speed voltage of the vacuum pump. The vacuum pump controller may further send control signals to control the supply of N2/H2 gas, cooling water and other vacuum pump accessories.

Abstract: A integrated circuit system including providing an integrated circuit device, forming an undoped insulating layer over the integrated circuit device, forming a thin insulating layer over the undoped insulating layer, forming a doped insulating layer over the thin insulating layer, and forming a contact in the undoped insulating layer, thin insulating layer and the doped insulating layer.

Abstract: A vacuum pump controller and a method of making a devise using the same are presented. The vacuum pump controller comprises detectors for detecting whether a cassette is present in a semiconductor processing load lock; and controllers for sending control signals to a vacuum pump to control the speed voltage of the vacuum pump. The vacuum pump controller may further send control signals to control the supply of N2/H2 gas, cooling water and other vacuum pump accessories.

Abstract: A integrated circuit system including providing an integrated circuit device, forming an undoped insulating layer over the integrated circuit device, forming a thin insulating layer over the undoped insulating layer, forming a doped insulating layer over the thin insulating layer, and forming a contact in the undoped insulating layer, thin insulating layer and the doped insulating layer.

Abstract: A two-step high density plasma-CVD process is described wherein the argon content in the film is controlled by using two different argon concentrations in the argon/silane/oxygen gas mixture used for generating the high density plasma. The first step deposition uses high argon concentration and low sputter etch-to-deposition (E/D) ratio. High E/D ratio maintains the gap openings without necking. In the second step, a lower argon concentration and lower E/D ratio are used. Since observed metal defects are caused by argon diffusion in the top 200-300 nm of the HDP-CVD film, by controlling argon concentration in the top part of the film (i.e. second step deposition) to a low value, a reduced number of metal defects are achieved.