Abstract: A reticle and a method of producing the same are disclosed. The reticle includes a medium layer formed on a transparent substrate, chrome layer patterns spaced apart from each other at predetermined intervals on the medium layer, and a frame and a pellicle formed to enclose the resulting structure. The method of manufacturing a reticle includes the steps of forming a medium layer on a transparent substrate, forming chrome layers on the medium layer, patterning the chrome layers so that the chrome layers are spaced apart from each other at predetermined intervals, and attaching a frame and a pellicle to surround the result. The resolution and focus of light output from the reticle is improved.

Abstract: A method of forming patterns of a semiconductor device, wherein a hard mask is formed over a semiconductor substrate; a photoresist comprising silicon-containing molecules is formed over the hard mask; a first exposure process is performed on first regions of the photoresist; a second exposure process is performed on second regions of the photoresist, which are located between the first regions; a bake process is performed on the photoresist; and, an etch process using the first regions and the second regions as etch mask patterns is performed, thereby patterning the photoresist and the hard mask.

Abstract: A reticle and a method of producing the same are disclosed. The reticle includes a medium layer formed on a transparent substrate, chrome layer patterns spaced apart from each other at predetermined intervals on the medium layer, and a frame and a pellicle formed to enclose the resulting structure. The method of manufacturing a reticle includes the steps of forming a medium layer on a transparent substrate, forming chrome layers on the medium layer, patterning the chrome layers so that the chrome layers are spaced apart from each other at predetermined intervals, and attaching a frame and a pellicle to surround the result. The resolution and focus of light output from the reticle is improved.

Abstract: A method for fabricating a semiconductor memory device is provided to increase the etch selectivity of photoresist by changing the matter properties thereof in forming a trench isolation region. The method includes the steps of: depositing first and second insulating layers on a semiconductor substrate where a shallow trench isolation (STI) region and a deep trench isolation (DTI) region are defined; forming the STI region by selectively etching the second and first insulating layers and the semiconductor substrate; forming a photoresist to cover the STI region and curing the surface of the photoresist; and forming the DTI region by using the cured photoresist and the second insulating layer as a mask.

Abstract: A method for fabricating a semiconductor memory device is provided to increase the etch selectivity of photoresist by changing the matter properties thereof in forming a trench isolation region. The method includes the steps of: depositing first and second insulating layers on a semiconductor substrate where a shallow trench isolation (STI) region and a deep trench isolation (DTI) region are defined; forming the STI region by selectively etching the second and first insulating layers and the semiconductor substrate; forming a photoresist to cover the STI region and curing the surface of the photoresist; and forming the DTI region by using the cured photoresist and the second insulating layer as a mask.