Patents by Inventor Chul H. Park

Chul H. Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thermal designs of packaged gallium nitride material devices and methods of packaging
    Patent number: 8026596
    Abstract: Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
    Type: Grant
    Filed: August 15, 2007
    Date of Patent: September 27, 2011
    Assignee: International Rectifier Corporation
    Inventors: Sameer Singhal, Andrew Edwards, Chul H. Park, Quinn Martin, Isik C. Kizilyalli
  • Gallium nitride material devices and thermal designs thereof
    Patent number: 7745848
    Abstract: Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
    Type: Grant
    Filed: August 15, 2007
    Date of Patent: June 29, 2010
    Assignee: Nitronex Corporation
    Inventors: Pradeep Rajagopal, Chul H. Park, Craig E. Strautin
  • Gallium Nitride Material Devices and Thermal Designs Thereof
    Publication number: 20100140665
    Abstract: Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
    Type: Application
    Filed: August 15, 2007
    Publication date: June 10, 2010
    Applicant: Nitronex Corporation
    Inventors: Sameer Singbal, Andrew Edwards, Chul H. Park, Quinn Martin, Isik Kizilyalli
  • CCD image sensor and method of preventing a smear phenomenon in the sensor
    Patent number: 5614950
    Abstract: A charge coupled device image sensor which can prevent smear and improve sensitivity, including a substrate of a first conductive type, a first well of a second conductive type formed on one side of said substrate, a second well of the second conductive type formed on the other side of said substrate, a pair of photo-detecting areas formed adjoining in said first well, a pair of charge transfer areas formed close to each photo-detecting area and adjoining in said second well, a channel stop area formed between said adjoining photo-detecting areas and said charge transfer areas and for isolating each of the areas,.
    Type: Grant
    Filed: August 2, 1995
    Date of Patent: March 25, 1997
    Assignee: LG Semicon Co., Ltd.
    Inventors: Chul H. Park, Kwang B. Song