Abstract: Provided is a vertical neuromorphic devices stacked structure comprising a main gate which is formed on a substrate and has a vertical pillar shape, a main gate insulating layer stack formed on outer side surface of the main gate; a semiconductor region formed on outer side surface of the main gate insulating layer stack, a plurality of electrode layers formed on the side surface of the semiconductor region, a plurality of control gates formed on the side surface of the semiconductor region; and a plurality of control gate insulating layer stacks which are surrounding surfaces of the control gates and are formed between the control gate and the semiconductor region, and between the control gate and the electrode layer, and wherein the electrode layers and the control gates surrounded by the control gate insulating layer stack are stacked sequentially and alternately on the side surface of the semiconductor region.

Abstract: Provided is a vertical neuromorphic devices stacked strticture comprising a main gate which is formed on a substrate and has a vertical pillar shape, a main gate insulating layer stack formed on outer side surface of the main gate; a semiconductor region formed on outer side surface of the main gate insulating layer stack, a plurality of electrode layers formed on the side surface of the semiconductor retnon, a plurality of control gates formed on the side surface of the semiconductor region; and a plurality of control gate insulating layer stacks which are surrounding surfaces of the control gates and are formed between the control gate and the semiconductor region, and between the control gate and the electrode layer, and wherein the electrode layers and the control gates surrounded by the control gate insulating layer stack are stacked sequentially and alternately on the side surface of the semiconductor region.

Abstract: Provided is a neuromorphic device including first and second lower electrodes formed on a substrate to be electrically separated, first and second lower insulating film stacks formed at least on respective surfaces of the first and second lower electrodes, first, second, and third doped regions formed at left and right sides of the first and second lower electrodes, first and second semiconductor regions formed on the first and second lower insulating film stacks, an upper insulating film stack formed on the first and second semiconductor regions and the first, second, and third doped regions, and an upper electrode formed on the upper insulating film stack. Accordingly, a specified neuromorphic device can be reconfigured to have arbitrarily inhibitory or excitatory functionality by using the first and second lower electrodes and the lower insulating film stacks including charge storage layers formed on the surfaces of the electrodes.

Abstract: Provided is a neuromorphic device including first and second lower electrodes formed on a substrate to be electrically separated, first and second lower insulating film stacks formed at least on respective surfaces of the first and second lower electrodes, first, second, and third doped regions formed at left and right sides of the first and second lower electrodes, first and second semiconductor regions formed on the first and second lower insulating film stacks, an upper insulating film stack formed on the first and second semiconductor regions and the first, second, and third doped regions, and an upper electrode formed on the upper insulating film stack. Accordingly, a specified neuromorphic device can be reconfigured to have arbitrarily inhibitory or excitatory functionality by using the first and second lower electrodes and the lower insulating film stacks including charge storage layers formed on the surfaces of the electrodes.

Abstract: A cyclone dust collecting apparatus has a cyclone body having an air inlet for drawing in, contaminant-laden air and an air outlet connected with a vacuum suction source. The vacuum provided by the vacuum source draws air from the air outlet, which passes through the cyclone body from the air inlet. As the air flows through the cyclone body, it forms a whirling stream in the cyclone body. The whirling stream creates a centrifugal force on particles that are suspended in the air, which, because of their greater mass, causes them to become separated from air that is drawn out of the whirling stream and into the air outlet by the vacuum source. The air outlet is provided with a passage guide member arranged in the air outlet that reduces the speed of air discharged via the air outlet and also for guiding a flow streamline.

Abstract: A cyclone dust collecting apparatus has a cyclone body having an air inlet for drawing in, contaminant-laden air and an air outlet connected with a vacuum suction source. The vacuum provided by the vacuum source draws air from the air outlet, which passes through the cyclone body from the air inlet. As the air flows through the cyclone body, it forms a whirling stream in the cyclone body. The whirling stream creates a centrifugal force on particles that are suspended in the air, which, because of their greater mass, causes them to become separated from air that is drawn out of the whirling stream and into the air outlet by the vacuum source. The air outlet is provided with a passage guide member arranged in the air outlet that reduces the speed of air discharged via the air outlet and also for guiding a flow streamline.