Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.

Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

Abstract: Disclosed is a film bulk acoustic resonator (FBAR) type filter including a substrate including two or more cavities on a top surface thereof, a lower electrode formed above the substrate, a piezoelectric layer formed above the lower electrode, two or more upper electrodes formed above the piezoelectric layer, and a package layer including a wall vertically extending while surrounding a periphery of certain areas in which the cavities and the lower electrode are formed and a roof disposed above the wall while being spaced apart from the upper electrodes to seal the certain areas.

Abstract: Disclosed is a film bulk acoustic resonator (FBAR) including a substrate, a lower electrode formed above the substrate, a piezoelectric layer formed above the lower electrode, an upper electrode formed above the piezoelectric layer, and a first protection layer formed above the upper electrode. Here, the first protection layer covers the upper electrode while extending downward along a side surface of one end of the upper electrode to cover a certain area of the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) device according to the present invention includes: a substrate; an intermediate layer formed on an upper surface of the substrate; a piezoelectric layer formed on an upper surface of the intermediate layer; and an inter-digital transducer (IDT) electrode formed on an upper surface of the piezoelectric layer to generate a SAW, wherein an upper portion of the substrate is deformed by a predetermined thickness by ion implantation to form an ion trap layer and the intermediate layer is formed on an upper surface of the ion trap layer.

Abstract: A surface acoustic wave resonator includes: a piezoelectric substrate; a plurality of metal structures formed on a top surface of the piezoelectric substrate to have a negative profile; and a temperature compensation layer covering the top surface of the piezoelectric substrate and the plurality of metal structures. The surface acoustic wave resonator according to an embodiment of the present invention has a frequency characteristic insensitive to change of profile and has an effect of having a high semi-resonance Q value characteristic.

Abstract: Disclosed is a surface acoustic wave device including a piezoelectric substrate, first and second bus bars formed on the piezoelectric substrate to be opposite each other, a plurality of first inter-digital electrodes that are electrically connected to the first bus bar and extend from the first bus bar toward the second bus bar, and a plurality of second inter-digital electrodes that are electrically connected to the second bus bar and extend from the second bus bar toward the first bus bar, in which the first inter-digital electrodes and the second inter-digital electrodes are alternately arranged.

Abstract: A surface acoustic wave resonator includes: a piezoelectric substrate; a plurality of metal structures formed on a top surface of the piezoelectric substrate to have a negative profile; and a temperature compensation layer covering the top surface of the piezoelectric substrate and the plurality of metal structures. The surface acoustic wave resonator according to an embodiment of the present invention has a frequency characteristic insensitive to change of profile and has an effect of having a high semi-resonance Q value characteristic.

Abstract: Disclosed is a surface acoustic wave device including a piezoelectric substrate, first and second bus bars formed on the piezoelectric substrate to be opposite each other, a plurality of first inter-digital electrodes that are electrically connected to the first bus bar and extend from the first bus bar toward the second bus bar, and a plurality of second inter-digital electrodes that are electrically connected to the second bus bar and extend from the second bus bar toward the first bus bar, in which the first inter-digital electrodes and the second inter-digital electrodes are alternately arranged.