Abstract: A connector assembly includes a housing having a housing base, a housing body protruding from the housing base, and a first housing protrusion provided inside the housing body. A protection part includes a protection base facing the housing base, a protection body protruding from the protection base, and a first protection arm extending from the protection body for engaging with the first housing protrusion. An insertion part of the assembly includes an insertion body for inserting inside of the protection part, and a first insertion protrusion protruding from the insertion body to interfere with the first protection arm. The first insertion protrusion deforms the first protection arm and causes the first protection arm to disengage from the first housing protrusion while the insertion body is inserted inside of the protection part.

Abstract: A connector assembly includes a housing having a housing base, a housing body protruding from the housing base, and a first housing protrusion provided inside the housing body. A protection part includes a protection base facing the housing base, a protection body protruding from the protection base, and a first protection arm extending from the protection body for engaging with the first housing protrusion. An insertion part of the assembly includes an insertion body for inserting inside of the protection part, and a first insertion protrusion protruding from the insertion body to interfere with the first protection arm. The first insertion protrusion deforms the first protection arm and causes the first protection arm to disengage from the first housing protrusion while the insertion body is inserted inside of the protection part.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.