Abstract: The present invention relates to a composition for preventing or treating transplantation rejection or a transplantation rejection disease, comprising a novel compound and a calcineurin inhibitor. A co-administration of the present invention 1) reduces the activity of pathogenic Th1 cells or Th17 cells, 2) increases the activity of Treg cells, 3) has an inhibitory effect against side effects, such as tissue damage, occurring in the sole administration thereof, 4) inhibits various pathogenic pathways, 5) inhibits the cell death of inflammatory cells, and 6) increases the activity of mitochondria, in an in vivo or in vitro allogenic model, a transplantation rejection disease model, a skin transplantation model, and a liver-transplanted patient, and thus inhibits transplantation rejection along with mitigating side effects possibly occurring in the administration of a conventional immunosuppressant alone.

Abstract: A display device includes a substrate, a display area disposed on the substrate and including a plurality of pixels and data lines, a peripheral area disposed outside the display area of the substrate, a pad portion disposed in the peripheral area, an encapsulation layer disposed in the peripheral area and the display area, and disposed on the plurality of pixels of the display area, a crack detection circuit disposed in the peripheral area, and a first crack detection line connected with the pad portion and the crack detection circuit. The first crack detection line is disposed on the encapsulation layer.

Abstract: A connector assembly includes a housing having a housing base, a housing body protruding from the housing base, and a first housing protrusion provided inside the housing body. A protection part includes a protection base facing the housing base, a protection body protruding from the protection base, and a first protection arm extending from the protection body for engaging with the first housing protrusion. An insertion part of the assembly includes an insertion body for inserting inside of the protection part, and a first insertion protrusion protruding from the insertion body to interfere with the first protection arm. The first insertion protrusion deforms the first protection arm and causes the first protection arm to disengage from the first housing protrusion while the insertion body is inserted inside of the protection part.

Abstract: A connector assembly includes a housing having a housing base, a housing body protruding from the housing base, and a first housing protrusion provided inside the housing body. A protection part includes a protection base facing the housing base, a protection body protruding from the protection base, and a first protection arm extending from the protection body for engaging with the first housing protrusion. An insertion part of the assembly includes an insertion body for inserting inside of the protection part, and a first insertion protrusion protruding from the insertion body to interfere with the first protection arm. The first insertion protrusion deforms the first protection arm and causes the first protection arm to disengage from the first housing protrusion while the insertion body is inserted inside of the protection part.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.

Abstract: A semiconductor device having a buried gate is provided. The semiconductor device is formed in a structure in which a plurality of contacts having small step differences are stacked without forming a metal contact applying an operation voltage to the buried gate in a single contact and a contact pad is formed between the contacts so that failure due to misalignment can be prevented without a separate additional process for forming the contacts.