Abstract: The present disclosure relates to a substrate processing method and apparatus which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers. The substrate processing method and apparatus can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.

Abstract: A display apparatus, a control method thereof and a recording medium are provided. The display apparatus includes: a display; a communicator configured to communicate with at least one external apparatus; and a processor configured to: control a user interface (UI) to be displayed on the display, the UI including a first item corresponding to the display apparatus and a second item corresponding to the at least one external apparatus and being displayed to distinguish between an external apparatus connected to the display apparatus and an external apparatus disconnected from the display apparatus, and, based on one of at least one of the second item being selected, control the external apparatus corresponding to the selected item to be connected to or disconnected from the display apparatus through the communicator.

Abstract: A lung phantom unit for radiotherapy according to an embodiment of the present disclosure may arrange, at a location not affected by a magnetic field, a phantom driving cylinder and a driving device which may move a lung mimic and a tumor mimic in a lung simulation block. The lung phantom unit may be used for general purpose even as a phantom for MRI-based and CT image-based radiotherapy. Since lung and tumor motions are implemented by air injection, it may be possible to precisely measure the motion and volume change of a lung according to subtle changes in air pressure so that customized radiotherapy suitable for a patient having various breathing patterns is possible.

Abstract: A display apparatus, a control method thereof and a recording medium are provided. The display apparatus includes: a display; a communicator configured to communicate with at least one external apparatus; and a processor configured to: control a user interface (UI) to be displayed on the display, the UI including a first item corresponding to the display apparatus and a second item corresponding to the at least one external apparatus and being displayed to distinguish between an external apparatus connected to the display apparatus and an external apparatus disconnected from the display apparatus, and, based on one of at least one of the second item being selected, control the external apparatus corresponding to the selected item to be connected to or disconnected from the display apparatus through the communicator.

Abstract: A gas introduction apparatus according to an embodiment of the present disclosure includes a gas feeding block disposed above a chamber, the gas feeding block comprising a plurality of gas channels disposed therein to supply a gas to the chamber, a valve assembly coupled to one side surface of the gas feeding block, the valve assembly comprising a plurality of valves for selectively opening/closing at least one of the plurality of gas channels, and a gas introduction pipe coupled, at one end thereof, to the valve assembly while communicating with the chamber at the other end thereof. A buffer space is provided at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction pipe, to accumulate the gas.

Abstract: One embodiment of a substrate supporting apparatus comprises: a support member for supporting a substrate; and a temperature compensating member disposed at the edge of the support member, and compensating the temperature of the substrate, wherein the support member may be made of a light-transmissive material, the temperature compensating member may be made of an opaque material, and the surface of the temperature compensating member may be made of a material having corrosion resistance against a cleaning gas.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

Abstract: The disclosure relates to a thin film forming device and a thin film forming method using the same capable of improving the film quality of a silicon thin film by dividing a reaction space in a process chamber of the thin film forming device and thereby forming the silicon thin film on a substrate in a first space and treating a surface of the silicon thin film, formed in the first space, in a second space by using plasma. By the thin film forming device and the thin film forming method using the same according to the disclosure, with a trend that a pattern is complicated and the depth of the pattern increases, impurities in a thin film may be more efficiently removed, a uniform thin film may be formed on a pattern, and the grain size of the crystals of a silicon thin film may be made uniform.

Abstract: One embodiment of a substrate supporting apparatus comprises: a support member for supporting a substrate; and a temperature compensating member disposed at the edge of the support member, and compensating the temperature of the substrate, wherein the support member may be made of a light-transmissive material, the temperature compensating member may be made of an opaque material, and the surface of the temperature compensating member may be made of a material having corrosion resistance against a cleaning gas.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Provided are a device and a method for monitoring substrates to determine a processed state of the substrates and inspecting presence of abnormality in the processed substrates. A device for inspecting substrates includes a substrate mounting part moving relative to the substrate and for mounting a substrate, a measurement part for monitoring the substrate, a control part configured to control a movement path of the measurement part so that at least some regions are monitored from positions different from each other with respect to a plurality of substrates, and an analysis part configured to determine presence of abnormality from monitoring information about the plurality of substrates.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: The present inventive concept relates to a gas distribution apparatus of a substrate processing apparatus including: a first gas distribution module distributing a processing gas to a first gas distribution space; and a second gas distribution module distributing a processing gas to a second gas distribution space which differs from the first gas distribution space, a substrate processing apparatus, and a substrate processing method.

Abstract: An embodiment of a substrate placing part relates to a substrate placing part that is arranged in a substrate processing apparatus. The substrate placing part is divided into a plurality of inner sections that have an inner heating wire and an outer heating wire; and an outer section that is arranged in an edge thereof, that surrounds the inner sections, and that includes the outer heating wire, wherein the inner heating wire is disposed in the same inner section and has a first gap in at least a partial section thereof, the respective inner heating wires disposed in the different inner sections are disposed to have a second gap in a part in which the inner heating wires are parallel to one another, the inner heating wire and the outer heating wire are disposed to have a third gap in a part in which the inner heating wire and the outer heating wire are parallel to one another, and the first gap may be smaller than the second gap.

Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.

Abstract: Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.

Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.

Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.