Abstract: The present inventive concept provides a method of forming a dielectric film comprising a step of supplying a first source gas; a step of supplying a first purge gas; a step of supplying a first reaction gas; and a step of supplying a second purge gas, wherein the step of supplying the first source gas comprises supplying a compound containing at least one metal selected from the group consisting of lanthanum (La), cerium (Ce), strontium (Sr), gadolinium (Gd), hafnium (Hf), and zirconium (Zr) into a vacuum deposition apparatus, and wherein the step of supplying the first reaction gas comprises supplying a compound selected from the group consisting of O3 and H2O into the vacuum deposition apparatus.

Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Abstract: Disclosed herein are a substrate processing apparatus and an interlock method thereof, which can generate an interlock signal, when the temperature of each upper or lower electrode in a process chamber exceeds a range set by a user, thereby cutting off application of RF power to the substrate processing apparatus. According to the substrate processing apparatus and the interlock method thereof, in an emergency where the temperatures of the upper and lower electrodes, a difference therebetween, an inter-electrode distance, and the resistance value of each electrode are out of the respective ranges set by the user, an interlock signal and an alarm signal can be generated to cut off the application of RF power to the substrate processing apparatus. Thus, it is possible to protect equipment by preventing the equipment from being damaged by RF power and to maintain the uniformity of a thin film deposited on a substrate.

Abstract: The present invention relates to a method for manufacturing a solar cell, comprising: a seating process of seating, in a processing space for manufacturing a solar cell, a cell in which a plurality of thin film layers are formed; a coating process of spraying a conductive material onto the cell; and a scribing process of irradiating a laser toward the cell to form a cell separation unit for separating the cell into a plurality of unit cells.

Abstract: The present inventive concept relates to an apparatus for processing a substrate, the apparatus comprising: a chamber which includes a lid on top; a first plate which is installed under the lid and in which a plurality of gas holes is formed; a second plate coupled to the first plate and including a plurality of gas holes that communicate with some of the plurality of gas holes of the first plate; and a distance adjustment part which is connected to the second plate, adjusts the distance between the lid and the first plate, and is connected to an RF power feeding line.

Abstract: A substrate processing device. The device comprises: a first source supply unit; a second source supply unit; a first supply line for connecting the first source supply unit to a spraying unit; a second supply line for connecting the second source supply unit to the spraying unit; a mixing unit provided at the first supply line to be arranged between the first source supply unit and the spraying unit; a first connection line for connecting the second supply line to the first supply line and/or the mixing unit; and a first path change unit provided at a first connection point at which the first connection line is connected to the second supply line, wherein the first path change unit changes the flow path of a second source gas supplied from the second source supply unit.

Abstract: The present invention relates to a substrate processing apparatus including: a chamber; a first electrode disposed on the chamber; a second electrode disposed under the first electrode, the second electrode including a plurality of openings; a plurality of protrusion electrodes extending from the first electrode to the plurality of openings of the second electrode; a substrate supporter being opposite to the second electrode and supporting a substrate; a first discharging region between a lower surface of the first electrode and an upper surface of the second electrode; a second discharging region between a side surface of the protrusion electrode and an opening inner surface of the second electrode; a third discharging region between a lower surface of the protrusion electrode and the opening inner surface of the second electrode; and a fourth discharging region between the second electrode and the substrate, wherein plasma is generated in at least one region of the first to fourth discharging regions.

Abstract: A chamber cleaning method in accordance with an exemplary embodiment includes a chamber stabilizing process for transporting a substrate, on which a thin film deposition process has been completed, out of a chamber and processing an inside of the chamber, wherein the chamber stabilizing process includes: a cleaning process for injecting a cleaning gas into the chamber and etching and cleaning byproducts generated by the thin film deposition; and a coating process for injecting a gas including at least one among aluminum (Al), zirconium (Zr) or hafnium (Hf) into the chamber, and generating a protective film on an inner wall of the chamber and at least one surface of components installed inside the chamber.

Abstract: The present inventive concept comprises the steps of preparing a substrate on which a first conductive charge transport layer is formed; positioning a mask having an opening pattern on the substrate; and forming a perovskite layer on the substrate and the mask.

Abstract: Provided is a substrate processing apparatus. The positions of a first electrode and a second electrode are adjusted in advance in consideration of differences in coefficients of thermal expansion so that a short circuit created by contact between the first electrode and the second electrode is prevented even in the case in which the first electrode and the second electrode are thermally expanded during processing. Even in the case in which the first electrode and the second electrode are thermally expanded due to an increase in temperature during processing, a short circuit between the first electrode and the second electrode can be prevented, and the uniformity of a thin film can be maintained in the substrate processing apparatus for processing a large substrate.

Abstract: The present inventive concept relates to a substrate processing apparatus including a supporting part for supporting a substrate; a disk supporting a plurality of the supporting parts; a lid disposed on the disk; and a first protrusion portion coupled to the disk to protrude in an upward direction from the disk to the lid in a center region disposed inward from the supporting parts and a gap region disposed between the supporting parts.

Abstract: The present disclosure relates to a thin film forming method, and more particularly, to a thin film forming method for forming a gallium nitride thin film. In accordance with an exemplary embodiment, a thin film forming method includes: loading a substrate into a process space of a chamber; and forming a gallium nitride thin film on the substrate, and the forming of the gallium nitride thin film includes: supplying a source gas containing gallium onto the substrate; supplying a reactant gas containing nitrogen onto the substrate; and activating and supplying a post-treatment gas containing hydrogen onto the substrate.

Abstract: The present disclosure relates to a substrate processing apparatus including: a chamber; a supporting part coupled to the chamber to support the substrate; a lid disposed on the supporting part and coupled to the chamber; a purge gas injection unit coupled to the lid to inject a purge gas to a processing space between the lid and the supporting part, for dividing the processing space into a plurality of processing regions; a shield disposed between the lid and the supporting part and coupled to the lid; a first injection unit injecting a first gas to a first processing region of the processing regions; a second injection unit injecting the first gas to the first processing region at a position apart from the first injection unit; and a first partition wall part coupled to the shield so that a first injection region disposed under the first injection unit, a second injection region disposed under the second injection unit, and a first separation space between the first injection region and the second injection

Abstract: Provided is a method for manufacturing an SiC substrate. The method for manufacturing the SiC substrate includes preparing a base, forming any one SiC thin film of an n-type SiC thin film or a p-type SiC thin film on the base, and separating the SiC thin film from the base. The forming of the SiC thin film includes injecting a source gas containing silicon (Si) onto the base, performing primary purge of injecting a purge gas after the injection of the source gas is stopped, injecting a reactant gas containing carbon (C) after the stop of the primary purge, and performing secondary purge of injecting the purge gas after the injection of the reactant gas is stopped. Therefore, in accordance with an exemplary embodiment, the SiC thin film may be deposited at a low temperature to prepare the SiC substrate. Accordingly, power or time required for rising the temperature of the base to form the SiC thin film may be reduced.

Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

Abstract: Provided is a method for manufacturing a power semiconductor device, which includes forming an active layer on an SiC substrate. The forming of the active layer includes injecting a source gas onto the SiC substrate, performing primary purging of injecting a purge gas after stopping the injecting of the source gas, injecting a reactant gas after stopping the primary purging, and performing secondary purging of injecting the purging gas after stopping the injecting of the reactant gas. Thus, in accordance with exemplary embodiments, the active layer may be formed at a low temperature. Therefore, a substrate or a thin film formed on the substrate may be prevented from being damaged by high-temperature heat. In addition, power or a time required for heating the substrate to form the active layer may be saved, and an overall process time may be shortened.

Abstract: The present inventive concept provides a solar cell, including: a semiconductor substrate; a first semiconductor layer provided on one surface of the semiconductor substrate; a second semiconductor layer provided on one surface of the first semiconductor layer; a third semiconductor layer provided on one surface of the second semiconductor layer; a first transparent conductive layer provided on one surface of the third semiconductor layer; and a first electrode provided on one surface of the first transparent conductive layer, wherein the second semiconductor layer includes a p-type semiconductor layer, and the third semiconductor layer includes a p+-type semiconductor layer including W, and a method of manufacturing the solar cell.

Abstract: Provided are a device and a method for monitoring substrates to determine a processed state of the substrates and inspecting presence of abnormality in the processed substrates. A device for inspecting substrates includes a substrate mounting part moving relative to the substrate and for mounting a substrate, a measurement part for monitoring the substrate, a control part configured to control a movement path of the measurement part so that at least some regions are monitored from positions different from each other with respect to a plurality of substrates, and an analysis part configured to determine presence of abnormality from monitoring information about the plurality of substrates.

Abstract: A gas introduction apparatus according to an embodiment of the present disclosure includes a gas feeding block disposed above a chamber, the gas feeding block comprising a plurality of gas channels disposed therein to supply a gas to the chamber, a valve assembly coupled to one side surface of the gas feeding block, the valve assembly comprising a plurality of valves for selectively opening/closing at least one of the plurality of gas channels, and a gas introduction pipe coupled, at one end thereof, to the valve assembly while communicating with the chamber at the other end thereof. A buffer space is provided at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction pipe, to accumulate the gas.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.