Abstract: A compound is represented by Chemical Formula 1, and at least one of X1 and X2 is a substituent having a volume ranging from about 900 bohr3 to about 3000 bohr3 (V/molecule), and a photoelectric device, an image sensor, and an electronic device includes the compound: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.

Abstract: Disclosed are a display panel and an electronic device. The display panel may include a substrate, first, second, and third light emitting diodes on the substrate and configured to emit light of first, second, and third wavelength spectra in a visible light wavelength spectrum, respectively, and first, second, third organic photoelectric conversion diodes overlapping the first, second, and third light emitting diode along a thickness direction of the substrate, respectively, may be provided. Each of first, second, third organic photoelectric conversion diodes may be configured to selectively absorb a portion of the visible light wavelength spectrum and convert the absorbed light into an electrical signal.

Abstract: A sensor-embedded display panel includes a substrate, a plurality of light emitting elements on the substrate and configured to emit light of different wavelength spectra belonging to the visible light wavelength spectrum, and a plurality of sensors on the substrate and configured to selectively sense light of any one of a green wavelength spectrum and a red wavelength spectrum. Each of the sensors includes a photoelectric conversion layer that includes a first wavelength-selective photoelectric conversion material having a first maximum absorption wavelength in a wavelength range of about 500 nm to about 600 nm and a thickness of the buffer layer is about 20 nm to about 50 nm, or the photoelectric conversion layer includes a second wavelength-selective photoelectric conversion material having a second maximum absorption wavelength in a wavelength range of greater than about 600 nm and less than about 750 nm and a thickness of the buffer layer is about 70 nm to about 110 nm.

Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.

Abstract: Provided is a compound represented by Chemical Formula 1 and having a reorganization energy of the compound of less than about 0.163 eV and a maximum absorption wavelength value calculated by density functional theory (DFT) of less than or equal to about 495 nm, and photoelectric devices, light absorption sensors, sensor-embedded display panels, and electronic devices including the same. In Chemical Formula 1, the definition of each substituent is as described in the specification.

Abstract: A sensor-embedded display panel includes a light emitting element and a sensor which include separate portions of a first common auxiliary layer including a hole transport material and a second common auxiliary layer including an electron transport material. The sensor includes first and second semiconductor layers proximate to the first and second common auxiliary layers, respectively, and including a p-type semiconductor and a non-fullerene n-type semiconductor having a LUMO energy level deeper than that of the electron transport material, respectively. An insertion layer between the second semiconductor layer and the second common auxiliary layer includes a metal, a metal compound, or any combination thereof. A work function of the metal or a LUMO energy level of the metal compound is deeper or shallower than the LUMO energy level of the non-fullerene n-type semiconductor and the LUMO energy level of the electron transport material within less than about 1.3 eV, respectively.

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: A sensor may include a reflective electrode, a photoelectric conversion layer on the reflective electrode and including one or more photoelectric conversion materials, a semi-transmissive electrode on the photoelectric conversion layer, a light transmitting buffer layer on the semi-transmissive electrode, and a semi-transmissive auxiliary layer on the light transmitting buffer layer.

Abstract: An organic compound is represented by Chemical Formula 1A or Chemical Formula 1B. In Chemical Formulas 1A and 1B, Ar1, Ar2, R1, R2, n, and m are each the same as in the detailed description.

Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor on the substrate and including a photosensitive layer extending at least partially in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include separate, respective portions of each of first and second common auxiliary layers each extending continuously as a single piece of material under and on, respectively, each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a light absorbing semiconductor having a HOMO energy level having a difference of less than about 1.0 eV from a HOMO energy level of the first common auxiliary layer and a LUMO energy level having a difference of less than about 1.0 eV from a LUMO energy level of the second common auxiliary layer.

Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.

Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.

Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.

Abstract: Disclosed are a sensor-embedded display panel and an electronic device including the sensor-embedded display panel. The sensor-embedded panel may include a light emitting element and a photosensor on a substrate. The light emitting element may include a light emitting layer and the photosensor may include a photosensitive layer in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include respective portions of a first common auxiliary layer. The first common auxiliary layer may be continuous along the in-place direction of the substrate and under each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor. The non-fullerene n-type semiconductor may form a pn junction with the p-type semiconductor.

Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.

Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

Abstract: An electronic device includes a display panel and a biometric sensor. The display panel includes a light emitter. The biometric sensor is stacked with the display panel and is configured to detect light emitted from the display panel and reflected by a recognition target that is external to the electronic device. The biometric sensor includes a silicon substrate and a photoelectric conversion element on the silicon substrate. The photoelectric conversion element includes a photoelectric conversion layer having wavelength selectivity.

Abstract: An organic sensor includes a first electrode, a second electrode, an organic active layer between the first electrode and the second electrode, and a protective layer between the organic active layer and the second electrode. Capacitance provided of the first electrode, the protective layer, and the second electrode is less than or equal to about 2×10?10 F.