Patents by Inventor Chul-joon HEO
Chul-joon HEO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240101565Abstract: An organic compound is represented by Chemical Formula 1A or Chemical Formula 1B. In Chemical Formulas 1A and 1B, Ar1, Ar2, R1, R2, n, and m are each the same as in the detailed description.Type: ApplicationFiled: August 18, 2023Publication date: March 28, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Jeong Il PARK, Feifei FANG, Sungyoung YUN, Chul Joon HEO, Kyung Bae PARK, Hwijoung SEO
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Patent number: 11929384Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: GrantFiled: March 20, 2023Date of Patent: March 12, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Publication number: 20240057438Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor on the substrate and including a photosensitive layer extending at least partially in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include separate, respective portions of each of first and second common auxiliary layers each extending continuously as a single piece of material under and on, respectively, each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a light absorbing semiconductor having a HOMO energy level having a difference of less than about 1.0 eV from a HOMO energy level of the first common auxiliary layer and a LUMO energy level having a difference of less than about 1.0 eV from a LUMO energy level of the second common auxiliary layer.Type: ApplicationFiled: May 15, 2023Publication date: February 15, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Hyeong-Ju KIM, Chul Joon Heo, Kyung Bae Park, Feifei Fang, Hwijoung Seo, Hiromasa Shibuya, Sungyoung Yun, Tae Jin Choi, Hyerim Hong
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Publication number: 20240040810Abstract: A sensor-embedded display panel includes a light emitting element on a substrate and including a light emitting layer, and a photosensor including a photosensitive layer on the substrate and arranged in parallel with the light emitting layer along an in-plane direction of the substrate such that the photosensor and the light emitting layer at least partially overlap in the in-plane direction, wherein the light emitting element and the photosensor further include separate, respective portions of a first common auxiliary layer disposed under each of the light emitting layer and the photosensitive layer and connected to each other to be a single piece of material extending continuously between the light emitting element and the photosensor, and the photosensitive layer includes a first semiconductor represented by Chemical Formula 1 and a second semiconductor not including any fullerenes and forming a pn junction with the first semiconductor.Type: ApplicationFiled: November 4, 2022Publication date: February 1, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Sungyoung YUN, Kyung Bae PARK, Feifei FANG, Hwijoung SEO, Hiromasa SHIBUYA, Younhee LIM, Tae Jin CHOI, Chul Joon HEO
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Patent number: 11869909Abstract: An image sensor may include a substrate, and a plurality of wavelength separation filters on the substrate and arranged along an in-plane direction of the substrate. The wavelength separation filters include a first wavelength separation filter configured to selectively transmit incident light in the first wavelength spectrum, and photoelectrically convert the incident light in at least one of the second wavelength spectrum or the third wavelength spectrum, a second wavelength separation filter configured to selectively transmit the incident light in the second wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the third wavelength spectrum, and a third wavelength separation filter configured to selectively transmit the incident light in the third wavelength spectrum and photoelectrically convert the incident light in at least one of the first wavelength spectrum or the second wavelength spectrum.Type: GrantFiled: June 2, 2021Date of Patent: January 9, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Chul Joon Heo, Kyung Bae Park, Sung Young Yun, Seon-Jeong Lim, Feifei Fang, Taejin Choi
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Patent number: 11871642Abstract: An OLED panel for implementing biometric recognition influencing an aperture ratio of an OLED light emitter i includes a substrate, an OLED on the substrate, and a driver on the substrate. The OLED may emit visible light, and the driver may drive the OLED. The driver may include a visible light sensor configured to detect the visible light emitted by the OLED, and the visible light sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate. The OLED panel may include a near infrared ray OLED that is configured to emit near infrared rays, and the driver may include a near infrared ray sensor configured to detect near infrared rays emitted by the near infrared ray OLED. The near infrared ray sensor may overlap the OLED in a direction that is substantially perpendicular to an upper surface of the substrate.Type: GrantFiled: January 28, 2022Date of Patent: January 9, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Kwang Hee Lee, Chul Joon Heo
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Publication number: 20240008351Abstract: Disclosed are a sensor-embedded display panel and an electronic device including the sensor-embedded display panel. The sensor-embedded panel may include a light emitting element and a photosensor on a substrate. The light emitting element may include a light emitting layer and the photosensor may include a photosensitive layer in parallel with the light emitting layer along an in-plane direction of the substrate. The light emitting element and the photosensor include respective portions of a first common auxiliary layer. The first common auxiliary layer may be continuous along the in-place direction of the substrate and under each of the light emitting layer and the photosensitive layer. The photosensitive layer may include a fluorine-containing p-type semiconductor and a non-fullerene n-type semiconductor. The non-fullerene n-type semiconductor may form a pn junction with the p-type semiconductor.Type: ApplicationFiled: December 13, 2022Publication date: January 4, 2024Applicant: Samsung Electronics Co., Ltd.Inventors: Jisoo SHIN, Hiromasa SHIBUYA, Hyeong-ju KIM, Kyung Bae PARK, Feifei FANG, Sungyoung YUN, Chul Joon HEO
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Patent number: 11858911Abstract: A squarylium compound has high transmittance in a visible wavelength spectrum of light and is configured to selectively absorb light in an infrared/near infrared wavelength spectrum of light.Type: GrantFiled: February 17, 2022Date of Patent: January 2, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Moon Gyu Han, Kyung Bae Park, Dongseon Lee, Yong Wan Jin, Chul Joon Heo
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Patent number: 11854294Abstract: An electronic device includes a display panel and a biometric sensor. The display panel includes a light emitter. The biometric sensor is stacked with the display panel and is configured to detect light emitted from the display panel and reflected by a recognition target that is external to the electronic device. The biometric sensor includes a silicon substrate and a photoelectric conversion element on the silicon substrate. The photoelectric conversion element includes a photoelectric conversion layer having wavelength selectivity.Type: GrantFiled: September 1, 2021Date of Patent: December 26, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Han Kim, Sung Young Yun, Seon-Jeong Lim, Chul Joon Heo
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Patent number: 11855236Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.Type: GrantFiled: January 9, 2023Date of Patent: December 26, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Sung Jun Park, Feifei Fang, Sung Young Yun, Seon-Jeong Lim, Chul Joon Heo
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Patent number: 11839096Abstract: An organic sensor includes a first electrode, a second electrode, an organic active layer between the first electrode and the second electrode, and a protective layer between the organic active layer and the second electrode. Capacitance provided of the first electrode, the protective layer, and the second electrode is less than or equal to about 2×10?10 F.Type: GrantFiled: November 25, 2019Date of Patent: December 5, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sung Young Yun, Sung Jun Park, Chul Joon Heo, Kyung Bae Park, Gae Hwang Lee, Yong Wan Jin
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Publication number: 20230354705Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.Type: ApplicationFiled: July 6, 2023Publication date: November 2, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Daiki MINAMI, Sung Young YUN, Kyung Bae PARK, Sung Jun PARK, Chul Joon HEO
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Publication number: 20230309366Abstract: Disclosed are a compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel, and an electronic device. In Chemical Formula 1, X1, A, and R1 to R5 are as described in the specification.Type: ApplicationFiled: November 3, 2022Publication date: September 28, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Tae Jin CHOI, Hyerim HONG, Kyung Bae PARK, Feifei FANG, Sungyoung YUN, Chul Joon HEO
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Publication number: 20230299115Abstract: An image sensor may include a first photo-sensing device on a semiconductor substrate and configured to sense light of a first wavelength spectrum, and second and third photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface, a lower surface, and a doped region therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.Type: ApplicationFiled: March 20, 2023Publication date: September 21, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Yong Wan Jin, Sung Young Yun, Sung Jun Park, Feifei Fang, Chul Joon Heo
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Patent number: 11737360Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.Type: GrantFiled: October 14, 2020Date of Patent: August 22, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Daiki Minami, Sung Young Yun, Kyung Bae Park, Sung Jun Park, Chul Joon Heo
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Patent number: 11713326Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, each substituent is the same as defined in the detailed description.Type: GrantFiled: July 24, 2020Date of Patent: August 1, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jisoo Shin, Chul Baik, Sung Young Yun, Taejin Choi, Kyung Bae Park, Gae Hwang Lee, Yeong Suk Choi, Chul Joon Heo, Hye Rim Hong
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Patent number: 11711930Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.Type: GrantFiled: May 3, 2021Date of Patent: July 25, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Kyung Bae Park, Takkyun Ro, Kiyohiko Tsutsumi, Chul Joon Heo, Yong Wan Jin
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Publication number: 20230208531Abstract: A receiver of an optical communication system includes an organic photoelectric conversion device configured to convert optical signals received from a transmitter into an electrical signal; and a demodulator configured to input the electrical signal to a trained artificial neural network and demodulate the electrical signal based on an output of the trained artificial neural network.Type: ApplicationFiled: December 29, 2022Publication date: June 29, 2023Applicants: Samsung Electronics Co., Ltd., INCHEON NATIONAL UNIVERSITY RESEARCH & BUSINESS FOUNDATIONInventors: Chul Joon Heo, Hyunchae Chun, Seoyeon Oh, Seonghyeon Cho, Kyung Bae Park, Hwijoung Seo, Younhee Lim
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Publication number: 20230157167Abstract: A photoelectric device includes a first electrode, a second electrode, a photoelectric conversion layer between the first electrode and the second electrode, and a charge transport layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer is configured to absorb light in a wavelength spectrum and converting the absorbed light into an electrical signal. The charge transport layer includes a first charge transport material and a second charge transport material which collectively define a heterojunction.Type: ApplicationFiled: January 6, 2023Publication date: May 18, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Seok-Hwan HONG, Sung Jun PARK, Kyung Bae PARK, Sung Young YUN, Chul Joon HEO
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Publication number: 20230134363Abstract: An organic compound is represented by Chemical Formula 1. In Chemical Formula 1, X1, X2, Ar1, n, R1, R2, A1, and A2 are each the same as in the specification.Type: ApplicationFiled: September 28, 2022Publication date: May 4, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Jeong Il PARK, Sung Young YUN, Hyeongju KIM, Kyung Bae PARK, Jisoo SHIN, Taejin CHOI, Chul Joon HEO