Abstract: Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including a first p-type light-absorption material and a first n-type light-absorption material, a light-absorption auxiliary layer on the light-absorption layer and including a second p-type light-absorption material or a second n-type light-absorption material that have a smaller full width at half maximum (FWHM) than the FWHM of the light absorption layer, a charge auxiliary layer on the light-absorption auxiliary layer, and a second electrode on the charge auxiliary layer, and an image sensor including the same.

Abstract: Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.

Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.

Abstract: Disclosed are an organic photoelectronic device including a first light-transmitting electrode, an active layer positioned on one side of the first light-transmitting electrode, and a second light-transmitting electrode positioned on one side of the active layer, wherein the first light-transmitting electrode and the second light-transmitting electrode independently comprise at least one of indium tin oxide (ITO), indium zinc oxide (IZO), tin oxide (SnO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and fluorine-doped tin oxide (FTO). Also disclosed is an image sensor including the organic photoelectronic device.

Abstract: Disclosed are an organic photoelectronic device including a first electrode and a second electrode facing each other and an active layer interposed between the first electrode and the second electrode, wherein the active layer includes a p-type semiconductor compound represented by the formula C22R1—R12O2N2 and an n-type semiconductor compound having a maximum absorption peak at a wavelength region of about 500 nm to about 600 nm, and an image sensor including the organic photoelectronic device.

Abstract: Provided are a method of fabricating a photonic crystal having a desired photonic bandgap, and a method of fabricating a color filter, including providing a photonic crystal solution in which a plurality of colloidal particles that are electrically charged are dispersed, mixing a photopolymerizable monomer mixture in the photonic crystal solution to form a photopolymerizable monomer-crystal mixture, applying an electric field to the photopolymerizable monomer-crystal mixture to electrically control intervals between the plurality of colloidal particles, and irradiating ultraviolet light to the photopolymerizable monomer-crystal mixture to photopolymerize the monomer mixture to form the photonic crystal or the color filter.

Abstract: Tunable photonic crystal color filters, and color image display devices including the same, include a first electrode, a second electrode facing the first electrode, a medium between the first electrode and the second electrode, nano particles distributed in the medium in a lattice structure and charged, and an ion spread preventing layer over a surface of at least one of the first electrode and the second electrode.