Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the method comprises sequentially depositing a front electrode layer and a semiconductor layer on a substrate; forming a first separating channel by removing predetermined portions of the front electrode layer and the semiconductor layer; forming a contact portion and a second separating channel by removing predetermined portions of the semiconductor layer; forming a first insulating layer in the first separating channel; and forming a plurality of rear electrodes at fixed intervals by each second separating channel interposed in-between, wherein each rear electrode is electrically connected with the front electrode layer through the contact portion. The present invention needs only one cleaning process after carrying out the laser-scribing process, whereby the yield can be improved owing to the simplified manufacturing process.

Abstract: A thin film type solar cell and a method for manufacturing the same is disclosed, wherein the method comprises sequentially depositing a front electrode layer and a semiconductor layer on a substrate; forming a first separating channel by removing predetermined portions of the front electrode layer and the semiconductor layer; forming a contact portion and a second separating channel by removing predetermined portions of the semiconductor layer; forming a first insulating layer in the first separating channel; and forming a plurality of rear electrodes at fixed intervals by each second separating channel interposed in-between, wherein each rear electrode is electrically connected with the front electrode layer through the contact portion. The present invention needs only one cleaning process after carrying out the laser-scribing process, whereby the yield can be improved owing to the simplified manufacturing process.

Abstract: The present invention relates to a semiconductor substrate, a semiconductor device with high carrier mobility and a method of manufacturing the same. According to the present invention, there are provided a semiconductor substrate comprising a silicon substrate, a single crystal germanium layer formed on the silicon substrate, and a silicon layer formed on the single crystal germanium layer; a semiconductor device comprising a gate electrode formed on the semiconductor substrate, and junctions formed in the substrate at both sides of the gate electrode; and a method of manufacturing the semiconductor device. Therefore, carrier mobility of channels can be enhanced since the channels of semiconductor devices are placed within the germanium layer. Further, since the silicon layer is formed on the germanium layer, the reliable gate insulation film can be formed and a leakage current produced in a junction layer can also be reduced.

Abstract: An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.

Abstract: An apparatus for a semiconductor device includes: a chamber; a susceptor in the chamber; a plurality of heating-blocks on the susceptor; a lift pin assembly through the susceptor; a substrate holder over the susceptor, the substrate holder having a plurality of through holes corresponding to the plurality of heating-blocks; and a shaft combined with the substrate holder-through the susceptor.

Abstract: A gas injector includes a body, a motor and a chopper. The body is mounted on a reaction chamber in a vertically extending cylinder shape and has a plurality of gas injection tubes and a central hollow portion. The plurality of gas injection tubes pass through a bottom face of the body and the central hollow portion passes through each center of the bottom and top faces of the body. The motor has a rotary shaft inserted into the central hollow portion. The chopper is formed in a circular-plate shape and has a notch on a predetermined portion. The chopper is coupled with an end of the rotary shaft and rotated by a rotation of the rotary shaft in a state that the bottom face of the body is closely attached to the chopper through a magnetic sealing.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: Disclosed is a semiconductor device manufacturing apparatus provided with a rotational gas injector for supplying source gases at an upper portion of a reaction chamber. According to the invention, source gases are injected from the upside of the wafers through the rotational type gas injector, and non-reacted gases are exhausted into the downside space of the wafers, so that lowering in the thickness uniformity of a thin film due to the horizontal flow of source gases provided in the conventional art decrease remarkably. Accordingly, although multiple wafers are loaded in a single reaction chamber, a thin film having very high thickness uniformity can be deposited with respect to all the wafers, thereby capable of enhancing the productivity.

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: A gas injector includes a body, a motor and a chopper. The body is mounted on a reaction chamber in a vertically extending cylinder shape and has a plurality of gas injection tubes and a central hollow portion. The plurality of gas injection tubes pass through a bottom face of the body and the central hollow portion passes through each center of the bottom and top faces of the body. The motor has a rotary shaft inserted into the central hollow portion. The chopper is formed in a circular-plate shape and has a notch on a predetermined portion. The chopper is coupled with an end of the rotary shaft and rotated by a rotation of the rotary shaft in a state that the bottom face of the body is closely attached to the chopper through a magnetic sealing.

Abstract: A high vacuum apparatus for fabricating a semiconductor device includes a reactive chamber provided with an inlet and an outlet for a reactive gas, a suscepter installed in the reactive chamber for mounting the semiconductor thereon and a vacuum pump connected with the outlet to make the inside of the reactive chamber to put in a high vacuum state, wherein a gas injector of the reactive gas inlet is directed downward of the semiconductor device so that the initial gas flowing of the reactive gas injected from the reactive gas inlet does not directly pass the upper portion of the semiconductor substrate mounted on the suscepter. Since the reactive gas is prevented from cooling and condensing at the upper surface of the semiconductor substrate, defective proportion of the semiconductor device can be remarkably reduced.

Abstract: A cluster tool for fabricating a semiconductor device includes: a transfer chamber having a wafer handling robot; a plurality of process chambers installed adjacent to each wall face of the transfer chamber; a loadlock chamber installed adjacent to different wall faces of the transfer chamber, in which a cassette is positioned to bring in and take out a wafer; and a cooling chamber installed at one side of a different wall face of the transfer chamber with an open-and-shut unit therebetween, the cooling chamber being provided with a wafer multiple-mounting unit having a plurality of wafer mounting plates for simultaneously mounting wafers which finishes undergoing processes in the process chamber and cooling them.

Abstract: An apparatus for fabricating a semiconductor device comprising: a reactor for providing a reaction region separated from outside; a pedestal arranged within said reactor to support a semiconductor substrate; a substrate transport port for loading said semiconductor substrate into said reactor; and upper and lower plasma electrodes for generating plasma within said reaction region, said upper and lower plasma electrodes being disposed in the upper and lower portions of said reaction region in respect to said pedestal, respectively. The apparatus further comprise a slot valve plasma electrode within the substrate transport port, and the slot valve plasma electrode is connected to the lower plasma electrode via an RF wire. Also, the upper and lower plasma electrodes are connected to the same RF power supply.

Abstract: A high density plasma chemical vapor deposition apparatus includes a vacuum chamber provided with an inlet and an outlet for a reaction gas; a suscepter positioned within the vacuum chamber to mount a wafer thereon, the suscepter having a wafer chuck at its upper surface to prevent the wafer from moving horizontally; a coil antenna surrounding the upper outer wall of the vacuum chamber; an RF generator for applying an RF power to the coil antenna; and a heating unit for heating the wafer mounted on the suscepter. Since the wafer 111 is heated in advance by the wafer heating unit, which is not proposed in the conventional HDP-CVD apparatus, the previously sputtered insulation material is restrained from re-depositing. Therefore, even though a gap has a high aspect ratio, it can be filled without a void.

Abstract: An apparatus for an apparatus for fabricating a semiconductor device comprising: an electrically grounded reactor for providing a reaction space sealed from the outer atmosphere; a susceptor for settling a wafer and arranged within the reactor to prevent electric connection to the reactor; a plasma electrode provided around the upper part of the reactor; an RF power supply electrically connected to the susceptor and the plasma electrode to provide RF power to the same; and an RF relay for applying the RF power supplied from the RF power supply to at least one of the susceptor and the plasma electrode. According to the apparatus, the optimal plasma atmosphere can be easily generated for a certain process without any additional plasma electrode. Furthermore, cleaning around the susceptor can be efficiently carried out by using the susceptor as a plasma electrode.

Abstract: An apparatus for fabricating a semiconductor device in which an O-ring can be protected from any thermal damage when used for sealing a reaction chamber or a quartz tube in a high temperature process, the apparatus comprising: a reaction chamber having an upper chamber with an upper flange and a lower chamber with a lower flange, the upper and lower flanges being coupled to define a reaction space sealed from the outer atmosphere; an O-ring inserted between the upper and lower flanges; a heater arranged within the reaction chamber; a water pipe provided within the lower flange; a metal seal provided to the upper surface of the lower flange of the reaction chamber; and a cooling flange provided with a water pipe adapted for cooling water to flow through the water pipe, the cooling flange being coupled with the upper flange of the reaction chamber so that the metal seal can be pressed onto the upper surface of the upper flange of the reaction chamber.

Abstract: An apparatus for fabricating a semiconductor device includes: a reactive chamber having an inlet and an outlet for a gas and being electrically grounded; a susceptor installed in the reactive chamber for mounting a wafer thereon and being electrically insulated with the reactive chamber; and an RF generator for applying an RF electric power to the susceptor. A method for cleaning the apparatus for fabricating a semiconductor device includes the steps of: injecting a plasma forming gas through the gas inlet; and moving the susceptor in the vertical direction of the face of the wafer while applying the RF electric power to the susceptor, to control the position and the density of the plasma. Since the plasma is formed even at the shadow area, such as the lower space of the susceptor within the reactive chamber where plasma could be hardly formed, there is no need to clean separately the lower space of the reactive chamber. Thus, the cleaning process is simplified.

Abstract: An apparatus for fabricating a semiconductor device includes: a plasma torch having a hollow convey tube of which one end portion is made of a conductor so as to serve as an inner electrode, for injecting plasma generating gas through one end portion, conveying and spraying a plasma frame through the other end portion; an energy applying unit for applying a microwave to the gas conveyed through the convey tube and adds an energy thereto; an outer electrode for surrounding the other end portion of the convey tube and its extended portion coaxially; an insulation tube positioned between the convey tube and the outer electrode for electrically insulating the other end portion of the convey tube and the outer electrode and surrounding partially the convey tube coaxially; a power source for applying a voltage to the inner electrode and the outer electrode; a suscepter installed facing the plasma frame sprayed from the plasma torch; a suscepter moving unit for moving the suscepter in the vertical and horizontal dir

Abstract: The present invention discloses an ALD method including: respectively loading a plurality of substrates into a plurality of reaction cells, the plurality of reaction cells being disposed in a reaction chamber isolated from an exterior condition; alternately and repeatedly applying various vapor substances onto each substrate such that a thin film is formed on each substrate, wherein a plurality of vapor injection pipes each injecting one of the vapor substances periodically scans over each substrate to apply the various vapor substances alternately and repeatedly onto each substrate.

Abstract: A high-permittivity dielectric capacitor and a fabrication method thereof are provided. The capacitor uses a tantalum oxynitride film as a high-permittivity dielectric film. The tantalum oxynitride film is deposited by chemical vapor deposition using tantalum ethoxide gas as a source of tantalum and oxygen and ammonia gas as a source of nitrogen. The tantalum oxynitride film has a high permittivity, a high thermal stability and a low interface heterogeneity between upper and lower electrodes. Thus, the current leakage due to oxygen vacancy in the film can be reduced.