Patents by Inventor Chul-Kyu Kang

Chul-Kyu Kang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090072258
    Abstract: An organic light emitting display includes an organic light emitting diode formed on a substrate, coupled to a transistor; a photodiode formed on the substrate and including a semiconductor layer including a high-concentration P doping region, an intrinsic region with defects and a high-concentration N doping region; and a controller that uniformly controls the luminance of light emitted from the organic light emitting diode by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photodiode.
    Type: Application
    Filed: April 7, 2008
    Publication date: March 19, 2009
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Chul-kyu KANG, Byoung-keon PARK
  • Publication number: 20090039773
    Abstract: An organic light emitting display apparatus including: a substrate; a thin film transistor formed on the substrate; a planarization layer formed on the substrate to cover the thin film transistor and comprising a closed-loop groove; a pixel electrode that contacts the thin film transistor and is formed on the planarization layer; a pixel defining layer formed to fill the closed-loop groove; a spacer formed on the planarization layer and disposed outside the pixel electrode; an organic light emitting layer formed on the pixel electrode; and an opposite electrode covering the organic light emitting layer.
    Type: Application
    Filed: March 19, 2008
    Publication date: February 12, 2009
    Applicant: Samsung SDI Co., Ltd.
    Inventors: WOO-SIK JUN, Chul-Kyu Kang
  • Publication number: 20080277666
    Abstract: A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.
    Type: Application
    Filed: May 5, 2008
    Publication date: November 13, 2008
    Inventors: Hee-Chul Jeon, Chul-Kyu Kang, Woo-Sik Jun, Jong-Hyun Choi
  • Publication number: 20080246037
    Abstract: Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.
    Type: Application
    Filed: September 12, 2007
    Publication date: October 9, 2008
    Inventors: Chul-Kyu Kang, Jong-Hyun Choi, Woo-Sik Jun, Hee-Chul Jeon
  • Publication number: 20080246029
    Abstract: A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.
    Type: Application
    Filed: March 13, 2008
    Publication date: October 9, 2008
    Inventors: Chul-Kyu Kang, Jong-Hyun Choi, Woo-Sik Jun, Hee-Chul Jeon
  • Publication number: 20080111484
    Abstract: An organic light emitting display device including an anode having a multi-layer structure which can be manufactured using a simple process, has good hole transfer properties and high reflectivity, and prevents energy loss due to a drop in voltage. The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including source and drain electrodes, a first anode patterned simultaneously with the source and drain electrodes of the thin film transistor, formed integrally with the source or drain electrode, and made out of a conductive material having a low resistance, a second anode formed on the first anode, and made out of a conductive material having a high work function, an organic layer formed on the second anode and a cathode formed on the organic layer.
    Type: Application
    Filed: April 10, 2007
    Publication date: May 15, 2008
    Inventors: Do-Hyun Kwon, Kyung-Jin Yoo, Woo-Sik Jun, Chul-Kyu Kang