Abstract: A pixel includes an organic light emitting diode (OLED) having a cathode electrode coupled to a second power source, a first transistor for controlling an amount of current that flows from a first power source to the second power source via the OLED corresponding to a data signal, a second transistor coupled between a data line and a gate electrode of the first transistor, a third transistor coupled between the gate electrode of the first transistor and a reference power source, a fourth transistor coupled between the third transistor and the reference power source, a fifth transistor coupled between an anode electrode of the OLED and an initial power source, a first capacitor coupled between the anode electrode of the OLED and a node between the third transistor and the fourth transistor, and a second capacitor coupled between the node and the gate electrode of the first transistor.

Abstract: An organic light emitting display device capable of improving image quality on a large panel. The organic light emitting display device includes a panel divided into at least two regions including a first region crystallized by a first crystallization process and a second region crystallized by a second crystallization process, in which a boundary part of the first and second regions is subject to both the first crystallization process and the second crystallization process, and further includes: organic light emitting diodes at crossing regions of scan lines and data lines; and pixel circuits at the crossing regions and configured to supply currents to the organic light emitting diodes. Here, couplings between the pixel circuits within the first region and the boundary part and their respective organic light emitting diodes are different from couplings between the pixel circuits within the second region and their respective organic light emitting diodes.

Abstract: A pixel includes an organic light emitting diode; a first transistor; a second transistor coupled to a data line and turned on when a scan signal is supplied to an ith scan line; a third transistor between the second transistor and a gate electrode of the first transistor and turned on when a scan signal is supplied to an i+1th scan line; a fourth transistor between the gate electrode of the first transistor and a reference power supply and turned on when the scan signal is supplied to the ith scan line; a fifth transistor between the organic light emitting diode and an initial power supply and turned on when a control signal is supplied; a first capacitor between the organic light emitting diode and a node between the second transistor and the third transistor; and a second capacitor between the node and the gate electrode of the first transistor.

Abstract: An organic light emitting display device compensates for a variation of the threshold voltage of a driving transistor. A scan driver and a data driver drive a plurality of pixels. A pixel of the pixels includes an organic light emitting diode, four transistors, and two capacitors. A first transistor controls a current to the organic light emitting diode. Second and third transistors are coupled between a data line from the data driver and a gate electrode of the first transistor. A fourth transistor is coupled between a reference power supply and the gate electrode of the first transistor. The two capacitors are coupled between the organic light emitting diode and respective electrodes of the third transistor.

Abstract: A pixel includes: an organic light emitting diode coupled between a first power supply and a second power supply; a first transistor coupled between the organic light emitting diode and the second power supply; a second transistor coupled to a first node to which a gate electrode of the first transistor is coupled; a first capacitor coupled between the first node and a second node; a third transistor coupled between the second node and a data line; a fourth transistor coupled between the first node and the second node; a fifth transistor coupled between the first transistor and the second power supply; and a second capacitor coupled between the second node and a third node between the first transistor and the fifth transistor.

Abstract: A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.

Abstract: An organic light emitting display device includes a scan driver for sequentially supplying a scan signal through scan lines; a data driver for supplying an initial power through data lines during a first period of a time period when the scan signal is supplied through a corresponding scan line of the scan lines, and for supplying data signals to the data lines during a second period of the time period when the scan signal is supplied through the corresponding scan line, the second period following the first period; and pixels at crossing regions of the scan lines and the data lines.

Abstract: A flat panel display including a semiconductor circuit, and a method of manufacturing the semiconductor circuit are disclosed. In one embodiment, the semiconductor circuit includes i) a substrate, ii) a semiconductor layer and a first capacitor electrode formed on the substrate, the first capacitor electrode being doped to be conductive, iii) an insulating layer covering the semiconductor layer and the first capacitor electrode, iv) a gate electrode disposed on the insulating layer and corresponding to a portion of the semiconductor layer, and v) a second capacitor electrode disposed on the insulating layer and corresponding to the first capacitor electrode, wherein the gate electrode is thicker than the second capacitor electrode.

Abstract: An organic light emitting display includes an organic light emitting diode formed on a substrate, coupled to a transistor; a photodiode formed on the substrate and including a semiconductor layer including a high-concentration P doping region, an intrinsic region with defects and a high-concentration N doping region; and a controller that uniformly controls the luminance of light emitted from the organic light emitting diode by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photodiode.

Abstract: An organic light emitting display apparatus including: a substrate; a thin film transistor formed on the substrate; a planarization layer formed on the substrate to cover the thin film transistor and comprising a closed-loop groove; a pixel electrode that contacts the thin film transistor and is formed on the planarization layer; a pixel defining layer formed to fill the closed-loop groove; a spacer formed on the planarization layer and disposed outside the pixel electrode; an organic light emitting layer formed on the pixel electrode; and an opposite electrode covering the organic light emitting layer.

Abstract: A thin film transistor (TFT) may include a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, and a semiconductor layer on the gate insulating layer. The semiconductor layer may include a top surface, a channel area aligned in a vertical direction with the gate electrode, a plurality of doped areas proximate to the channel area, and a plurality of non-doped areas. Source and drain electrodes may be on the top surface of the semiconductor layer aligned above respective ones of the plurality of non-doped areas of the semiconductor layer. A planarization layer may be on the gate insulating layer, the source and drain electrodes and the semiconductor layer channel area, and may include a plurality of openings respectively exposing the plurality of doped areas of the semiconductor layer and a portion of the source electrode and the drain electrode.

Abstract: Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.

Abstract: A thin film transistor, e.g., for use in an organic light emitting display, may include: a gate insulating layer disposed on a gate electrode located on a substrate; a semiconductor layer, disposed on the gate insulating layer; and a planarization layer disposed on the gate insulating layer, the source and drain electrodes, and the channel area, and having openings exposing parts of the first source and drain areas and the source and drain electrodes, respectively. The semiconductor layer may include: a channel area corresponding to the gate electrode; first source and drain areas doped with an impurity outside the channel area; second source and drain areas, including a metal, outside the first source and drain areas; and source and drain electrodes disposed on the second source and drain areas and exposing the first source and drain areas. A pixel electrode may be disposed in one of the openings.

Abstract: An organic light emitting display device including an anode having a multi-layer structure which can be manufactured using a simple process, has good hole transfer properties and high reflectivity, and prevents energy loss due to a drop in voltage. The organic light emitting display device includes a substrate, a thin film transistor formed on the substrate and including source and drain electrodes, a first anode patterned simultaneously with the source and drain electrodes of the thin film transistor, formed integrally with the source or drain electrode, and made out of a conductive material having a low resistance, a second anode formed on the first anode, and made out of a conductive material having a high work function, an organic layer formed on the second anode and a cathode formed on the organic layer.