Patents by Inventor Chul-Kyu YANG
Chul-Kyu YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240126163Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film, an etch stop film, a phase shift film, and a hard mask film which are sequentially formed on a substrate. The phase shift film contains ruthenium (Ru), and the etch stop film contains chrome (Cr) and niobium (Nb). In the etch stop film, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) ranges from 10 to 40 at %. The hard mask film contains tantalum (Ta) and oxygen (O). The content of tantalum (Ta) in the hard mask film is higher than or equal to 50 at %. With the blankmask, it is possible to implement a high resolution and NILS during wafer printing, and implement DtC.Type: ApplicationFiled: January 24, 2023Publication date: April 18, 2024Applicant: S&S TECH Co., Ltd.Inventors: Yong-Dae KIM, Chul-Kyu YANG, Mi-Kyung WOO
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Publication number: 20240126162Abstract: Disclosed is a blankmask for EUV lithography, including a reflective film, a capping film and a phase shift film which are sequentially formed on a substrate. The phase shift film includes a first layer containing niobium (Nb) and chrome (Cr), and a second layer containing tantalum (Ta) and silicon (Si). In the first layer, the content of niobium (Nb) ranges from 20 to 50 at %, and the content of chrome (Cr) content ranges from 10 to 40 at %. The blankmask can implement an excellent resolution and NILS, and implement a low DtC.Type: ApplicationFiled: November 17, 2022Publication date: April 18, 2024Applicant: S&S TECH Co., Ltd.Inventors: Yong-Dae KIM, Jong-Hwa LEE, Chul-Kyu YANG
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Publication number: 20240110031Abstract: The embodiments relate to a polyester film and a process for regenerating a polyester container using the same, which not only solve the environmental problems by improving the recyclability of polyester containers, but also are capable of enhancing the yield and productivity. The polyester film comprises a first layer comprising a first resin comprising a diol component and a dicarboxylic acid component; and a second layer laminated on one side of the first layer and comprising a second resin different from the first resin, wherein when the polyester film is cut with a polyethylene terephthalate container to form flakes and the flakes are thermally treated at a temperature of 200° C. to 220° C. for 60 minutes to 120 minutes, the clumping fraction is 8% or less.Type: ApplicationFiled: December 14, 2023Publication date: April 4, 2024Applicants: SK microworks Co., Ltd., SK microworks America, Inc.Inventors: Chul Kyu KIM, Yongdeuk KIM, Joo Ho YANG
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Patent number: 11940725Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.Type: GrantFiled: December 6, 2021Date of Patent: March 26, 2024Assignee: S&S Tech Co., Ltd.Inventors: Cheol Shin, Yong-Dae Kim, Jong-Hwa Lee, Chul-Kyu Yang, Min-Kwang Park, Mi-Kyung Woo
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Patent number: 11927880Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.Type: GrantFiled: January 10, 2022Date of Patent: March 12, 2024Assignee: S&S TECH Co., Ltd.Inventors: Yong-Dae Kim, Chul-Kyu Yang, Min-Kwang Park, Mi-Kyung Woo
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Patent number: 11815801Abstract: Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.Type: GrantFiled: January 8, 2021Date of Patent: November 14, 2023Assignee: S & S TECH CO., LTD.Inventors: Cheol Shin, Jong-Hwa Lee, Chul-Kyu Yang, Gil-Woo Kong
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Patent number: 11579521Abstract: Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.Type: GrantFiled: January 8, 2021Date of Patent: February 14, 2023Assignee: S&S TECH CO., LTD.Inventors: Cheol Shin, Jong-Hwa Lee, Chul-Kyu Yang, Gil-Woo Kong
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Patent number: 11467485Abstract: A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.Type: GrantFiled: November 5, 2020Date of Patent: October 11, 2022Assignee: S&S TECH Co., Ltd.Inventors: Cheol Shin, Jong-Hwa Lee, Chul-Kyu Yang, Gil-Woo Kong, Gyeong-Won Seo
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Patent number: 11435661Abstract: A blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film includes at least one Mo/Si layer that includes a Mo layer and a Si layer, and at least one Ru/Si layer that includes a Ru layer and a Si layer. Interdiffusion between the respective layers forming the reflection film is suppressed in a blankmask for EUV having a reflection film. Accordingly, the reflectance of the blankmask is improved, and the decrease in reflectance due to use after the manufacturing is prevented, thereby extending the life of the photomask.Type: GrantFiled: November 18, 2020Date of Patent: September 6, 2022Assignee: S&S TECH Co., Ltd.Inventors: Chul-Kyu Yang, Gil-Woo Kong
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Publication number: 20220269160Abstract: A blankmask for extreme ultraviolet lithography includes a substrate, a reflective layer formed on the substrate, and a phase shift layer formed on the reflective layer. The phase shift layer contains niobium (Nb), and is made of a material containing one of tantalum (Ta), chromium (Cr), and ruthenium (Ru). A phase shift layer containing Nb and Ta has a relative reflectance of 5 to 20%, a phase shift layer containing Nb and Cr has a relative reflectance of 9 to 15%, and a phase shift layer containing Nb and Ru has a relative reflectance of 20% or more. The phase shift layer has a phase shift amount of 170 to 230°, and has a surface roughness of 0.5 nmRMS or less. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.Type: ApplicationFiled: January 10, 2022Publication date: August 25, 2022Applicant: S&S TECH Co., Ltd.Inventors: Yong-Dae KIM, Chul-Kyu YANG, Min-Kwang PARK, Mi-Kyung WOO
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Publication number: 20220236635Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.Type: ApplicationFiled: December 6, 2021Publication date: July 28, 2022Applicant: S&S TECH Co., Ltd.Inventors: Cheol SHIN, Yong-Dae KIM, Jong-Hwa LEE, Chul-Kyu YANG, Min-Kwang PARK, Mi-Kyung WOO
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Patent number: 11360377Abstract: The disclosure relates to a half-toned attenuated shift blankmask for extreme ultraviolet lithography including: a reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorbing film that are sequentially provided on a transparent substrate. The phase shift film has a high reflectance of 20% or more, so characteristics of NILS and MEEF are improved during wafer printing.Type: GrantFiled: October 23, 2020Date of Patent: June 14, 2022Assignee: S&S TECH Co., Ltd.Inventors: Cheol Shin, Jong-Hwa Lee, See-Jun Jeong, Chul-Kyu Yang
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Publication number: 20220075258Abstract: A blankmask includes a hard film and a light-shielding film formed on a transparent substrate. The hard film is made of a silicon compound that contains at least one of oxygen, nitrogen and carbon in addition to silicon. There are provided a blankmask and a photomask improved in resolution, desired critical dimension (CD), and process window margin. Thus, it is possible to manufacture a blankmask and a photomask of good quality when a pattern of 32 nm or below, in particular, 14 nm or below is formed.Type: ApplicationFiled: December 20, 2019Publication date: March 10, 2022Applicant: S&S TECH Co., Ltd.Inventors: Cheol SHIN, Jong-Hwa LEE, Chul-Kyu YANG, Min-Ki CHOI, Seung-Hyup SHIN, Gil-Woo KONG
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Publication number: 20220066311Abstract: A blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film includes at least one Mo/Si layer that includes a Mo layer and a Si layer, and at least one Ru/Si layer that includes a Ru layer and a Si layer. Interdiffusion between the respective layers forming the reflection film is suppressed in a blankmask for EUV having a reflection film. Accordingly, the reflectance of the blankmask is improved, and the decrease in reflectance due to use after the manufacturing is prevented, thereby extending the life of the photomask.Type: ApplicationFiled: November 18, 2020Publication date: March 3, 2022Applicant: S&S TECH Co., Ltd.Inventors: Chul-Kyu YANG, Gil-Woo KONG
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Publication number: 20220066310Abstract: A blankmask includes a conductive layer attached to a backside of a substrate, and the conductive layer includes a first layer, a second layer, and a third layer that are sequentially stacked on the backside of the substrate. The first layer and the third layer are made of a material that contains chromium (Cr) and oxygen (O), and the second layer is made of a material that does not contain the oxygen (O) but contains the chromium (Cr). There is provided the blankmask with the conductive layer having characteristics of low sheet resistance, high adhesion to the substrate, and low stress applied to the substrate.Type: ApplicationFiled: November 18, 2020Publication date: March 3, 2022Applicant: S&S TECH Co., Ltd.Inventors: Gyeong-Won SEO, Gil-Woo KONG, Chul-Kyu YANG
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Publication number: 20210208495Abstract: Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.Type: ApplicationFiled: January 8, 2021Publication date: July 8, 2021Inventors: Cheol SHIN, Jong-Hwa LEE, Chul-Kyu YANG, Gil-Woo KONG
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Publication number: 20210208496Abstract: Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The reflection film has a structure in which a pair including a first layer made of Ru or a Ru compound in which one or more of Mo, Nb, and Zr are added to Ru, and a second layer made of Si is stacked plural times. Interdiffusion between the respective layers constituting the reflection film is suppressed.Type: ApplicationFiled: January 8, 2021Publication date: July 8, 2021Inventors: Cheol SHIN, Jong-Hwa LEE, Chul-Kyu YANG, Gil-Woo KONG
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Publication number: 20210132487Abstract: A blankmask for extreme ultraviolet lithography includes a reflection film, a capping film, and an absorbing film that are sequentially formed on a transparent substrate, in which the reflection film has a surface roughness of 0.5 nm Ra or less. It is possible to prevent footing of an EUV photomask pattern from occurring, improving flatness of an EUV blankmask, and prevent oxidation and defects of a capping film.Type: ApplicationFiled: November 5, 2020Publication date: May 6, 2021Applicant: S&S TECH Co., Ltd.Inventors: Cheol SHIN, Jong-Hwa LEE, Chul-Kyu YANG, Gil-Woo KONG, Gyeong-Won SEO
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Publication number: 20210124254Abstract: The disclosure relates to a half-toned attenuated shift blankmask for extreme ultraviolet lithography including: a reflective film, a capping film, a first etch stop film, a phase shift film, a second etch stop film, and an absorbing film that are sequentially provided on a transparent substrate. The phase shift film has a high reflectance of 20% or more, so characteristics of NILS and MEEF are improved during wafer printing.Type: ApplicationFiled: October 23, 2020Publication date: April 29, 2021Applicant: S&S TECH Co., Ltd.Inventors: Cheol SHIN, Jong-Hwa LEE, See-Jun JEONG, Chul-Kyu YANG
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Patent number: 10942445Abstract: A blankmask according to the present disclosure includes a light-shielding film provided on a transparent substrate; and a hard mask film provided on the light-shielding film and comprising molybdenum chromium (MoCr). Thus, the hard mask film has not only an enhanced etching speed but also sufficient etching resistance to fluorine (F)-based dry etching, so that an etching load against a resist film can be decreased and a hard mask film pattern and a light-shielding film pattern can be improved in a line edge roughness (LER), thereby forming a photomask for high-precision pattern printing.Type: GrantFiled: December 7, 2018Date of Patent: March 9, 2021Assignee: S&S TECH Co., Ltd.Inventors: Cheol Shin, Jong-Hwa Lee, Chul-Kyu Yang, Min-Ki Choi