Patents by Inventor Chul-Kyun PARK

Chul-Kyun PARK has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240036461
    Abstract: The pellicle has a pellicle portion that allows transmission of EUV exposure light. The pellicle portion comprises a heat radiation layer for radiating heat generated by irradiation of EUV exposure light. The heat radiation layer comprises metal and silicon, and the metal content of the heat radiation layer is greater than the silicon content. This ensures a high transmittance of 90% or more, while improving the heat radiation performance of the pellicle portion, so that it can be applied to EUV exposure light powers of 600 W or more.
    Type: Application
    Filed: July 25, 2023
    Publication date: February 1, 2024
    Applicant: S&S TECH Co., Ltd.
    Inventors: Ju-Hee HONG, Chul-Kyun PARK, Mun-Su CHOI, Dong-Hoi KIM
  • Publication number: 20220043336
    Abstract: A pellicle for extreme ultraviolet lithography includes a pellicle part configured to include a center layer and a reinforcing layer. The center layer essentially contains silicon (Si), and additionally contains at least one material of zirconium (Zr), zinc (Zn), ruthenium (Ru), and molybdenum (Mo). The reinforcing layer is made of a material containing at least one of silicon (Si), boron (B), zirconium (Zr), nitrogen (N), carbon (C), and oxygen (O). A thickness of the pellicle is minimized, and as a result, the pellicle has excellent mechanical, thermal, and chemical properties while maintaining high transmittance to EUV exposure light.
    Type: Application
    Filed: November 23, 2020
    Publication date: February 10, 2022
    Applicant: S&S TECH Co., Ltd.
    Inventors: Cheol SHIN, Chang-Hun LEE, Ju-Hee HONG, Jong-Won YUN, Chul-Kyun PARK, Seung-Jo LEE, Ji-Hye KIM, Hae-Na LEE
  • Publication number: 20210096458
    Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography, with a core layer formed on a pellicle frame, the core layer comprising: a first layer; and a second layer. The first layer includes silicon. The second layer includes one among a metal silicide that has silicon with metal, a silicon compound that has silicon with a light element, and a metal silicide compound that has silicon with metal and a light element. With this, the pellicle is improved in mechanical, thermal and chemical stability with minimum loss of optical characteristics.
    Type: Application
    Filed: December 27, 2019
    Publication date: April 1, 2021
    Applicant: S&S TECH Co., Ltd.
    Inventors: Kee-Soo NAM, Chang-Hun LEE, Jong-Won YUN, Chul-Kyun PARK
  • Patent number: 10859901
    Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography. The pellicle may include: a support layer pattern which is formed by etching a support layer; a pellicle layer which is formed on the support layer pattern; and an etching stop layer pattern which is formed between the support layer pattern and the pellicle layer and formed by etching an etching stop layer of stopping etching when the support layer is etched. Thus, there is provided a pellicle for EUV photomask, which maintains high transmittance with the minimum thickness for EUV exposure light, and is excellent in mechanical strength and thermal characteristics.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: December 8, 2020
    Assignee: S&S TECH Co., Ltd.
    Inventors: Kee-Soo Nam, Chang-Hun Lee, Ju-Hee Hong, Chul-Kyun Park
  • Patent number: 10768523
    Abstract: Disclosed are a pellicle for an extreme ultraviolet (EUV) lithography, which is excellent in transmittance of EUV exposure light and mechanical strength, and a method of fabricating the same. The pellicle includes a support layer pattern; a buried oxide layer pattern formed on the support layer pattern; and a pellicle layer provided being supported by the buried oxide layer pattern. The pellicle may further include a reinforcement layer for reinforcing the mechanical strength of the pellicle layer, an auxiliary layer for additionally supplementing the mechanical strength of the reinforcement layer, and a heat dissipation layer for dissipating heat of the pellicle layer.
    Type: Grant
    Filed: March 8, 2018
    Date of Patent: September 8, 2020
    Assignee: S&S TECH CO., LTD.
    Inventors: Kee-Soo Nam, Chang-Hun Lee, Ju-Hee Hong, Chul-Kyun Park
  • Publication number: 20190146324
    Abstract: Disclosed is a pellicle for extreme ultraviolet (EUV) lithography. The pellicle may include: a support layer pattern which is formed by etching a support layer; a pellicle layer which is formed on the support layer pattern; and an etching stop layer pattern which is formed between the support layer pattern and the pellicle layer and formed by etching an etching stop layer of stopping etching when the support layer is etched. Thus, there is provided a pellicle for EUV photomask, which maintains high transmittance with the minimum thickness for EUV exposure light, and is excellent in mechanical strength and thermal characteristics.
    Type: Application
    Filed: August 24, 2018
    Publication date: May 16, 2019
    Inventors: Kee-Soo NAM, Chang-Hun LEE, Ju-Hee HONG, Chul-Kyun PARK
  • Publication number: 20180259845
    Abstract: Disclosed are a pellicle for an extreme ultraviolet (EUV) lithography, which is excellent in transmittance of EUV exposure light and mechanical strength, and a method of fabricating the same. The pellicle includes a support layer pattern; a buried oxide layer pattern formed on the support layer pattern; and a pellicle layer provided being supported by the buried oxide layer pattern. The pellicle may further include a reinforcement layer for reinforcing the mechanical strength of the pellicle layer, an auxiliary layer for additionally supplementing the mechanical strength of the reinforcement layer, and a heat dissipation layer for dissipating heat of the pellicle layer.
    Type: Application
    Filed: March 8, 2018
    Publication date: September 13, 2018
    Inventors: Kee-Soo NAM, Chang-Hun LEE, Ju-Hee HONG, Chul-Kyun PARK