Abstract: A display device includes a first pixel electrode on a substrate, a first light emitting layer on the first pixel electrode, a first common electrode on the first light emitting layer, a first bank on the substrate and exposing the first common electrode therethrough, and a second bank on the first bank and having side surfaces protruding beyond side surfaces of the first bank. A width of a lower surface of the first bank is smaller than that of an upper surface of the first bank.

Abstract: One or more embodiments of the present disclosure provide a display device including a substrate having a display area and a non-display area, sub-pixels in the display area, a metal line crossing the non-display area and the display area, and extending in the display area to be spaced apart from light-emitting areas of the sub-pixels in a plan view, and an auxiliary circuit connected to the metal line in the display area.

Abstract: A display device includes: a substrate; a first electrode and a second electrode on the substrate, extended in a first direction and spaced apart from each other; a first insulating layer on the first electrode and the second electrode; a light-emitting element on the first insulating layer and between the first electrode and the second electrode; and a first connection electrode connected to a first end of the light-emitting element and a second connection electrode connected to a second end of the light-emitting element, wherein the first insulating layer overlaps with the light-emitting element and comprises trench portions comprising a plurality of trenches.

Abstract: A display device is provided. The display device may include a substrate, a driving element layer on the substrate, and a light emitting element layer on the driving element layer. The light emitting element layer may include a pixel defining layer delimiting sub-pixels, a first electrode of each sub-pixel in an opening of the pixel defining layer, a heating line disposed on the pixel defining layer to surround the first electrode of each sub-pixel, an intermediate layer covering the first electrode in the opening and the pixel defining layer and being partially disconnected above the heating line, and a second electrode continuously covering the intermediate layer and the heating line between adjacent sub-pixels while covering the intermediate layer in the opening. The heating line surrounds a pair of first electrodes corresponding to the adjacent sub-pixels in a form of a Eulerian trail.

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 ? to about 6000 ?.

Abstract: Provided is a display device. The display device comprises a first substrate, wherein a first contact hole is defined in the first substrate, a barrier layer on the first substrate, wherein a second contact hole is defined in the barrier layer and connected to the first contact hole, a first connection line on the barrier layer and inserted into the second contact hole, a second substrate covering the first connection line and the barrier layer, and a thin-film transistor layer on the second substrate and including at least one thin-film transistor. The thin-film transistor layer further includes a second connection line connected between the first connection line and the at least one thin-film transistor.

Abstract: A pixel includes: a via layer disposed on a substrate; a first electrode disposed on the via layer; a pixel defining layer disposed on the first electrode, the pixel defining layer including an opening exposing a portion of the first electrode; an emission layer disposed on the portion of the first electrode and the pixel defining layer; and a second electrode disposed on the emission layer. The first electrode includes a first layer disposed on the via layer and a second layer disposed between the first layer and the pixel defining layer. The first layer includes a plurality of sub-insulating layers, each of the plurality of sub-insulating layers including a first sub-layer and a second sub-layer that are sequentially stacked. The first sub-layer and the second sub-layer have different refractive indices.

Abstract: A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

Abstract: A display device includes a base substrate including a display area and a non-display area around the display area are defined, a first interlayer insulating layer disposed on the base substrate, a second interlayer insulating layer disposed on the first interlayer insulating layer, a first semiconductor layer disposed on the second interlayer insulating layer and including an oxide, and a first gate insulating layer disposed on the first semiconductor layer, wherein the material of the first interlayer insulating layer and the material of the second interlayer insulating layer are different from each other. Methods of manufacturing a display device are also disclosed.

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 ? to about 6000 ?.

Abstract: A method of manufacturing a display device includes providing an inorganic layer on a carrier substrate, providing a first flexible substrate on the inorganic layer, providing a first shielding layer including a metal on the first flexible substrate, providing a first barrier layer on the first shielding layer, and providing a thin film transistor layer on the first barrier layer. The inorganic layer includes at least one material selected from silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiOxNy), and a thickness of the inorganic layer is in a range from about 10 ? to about 6000 ?.

Abstract: A display device and a method of manufacturing the same are provided. The display device, comprises a first base substrate, a first barrier layer disposed on the first base substrate, a second base substrate disposed on the first barrier layer, at least one transistor disposed on the second base substrate, and an organic light emitting diode disposed on the at least one transistor, wherein the first barrier layer includes a silicon oxide, and has an adhesion force of 200 gf/inch or more to the second base substrate.

Abstract: Provided is a display device. The display device comprises a first substrate, wherein a first contact hole is defined in the first substrate, a barrier layer on the first substrate, wherein a second contact hole is defined in the barrier layer and connected to the first contact hole, a first connection line on the barrier layer and inserted into the second contact hole, a second substrate covering the first connection line and the barrier layer, and a thin-film transistor layer on the second substrate and including at least one thin-film transistor. The thin-film transistor layer further includes a second connection line connected between the first connection line and the at least one thin-film transistor.

Abstract: A light emitting device includes: a substrate; a first electrode and a second electrode on the substrate and spaced apart from each other; a light emitting diode between the first electrode and the second electrode and connected to the first and second electrodes; a first contact on the first electrode; and a second contact on the second electrode. The first contact contacts the first electrode and a first portion of the light emitting diode, and the second contact contacts the second electrode and a second portion of the light emitting diode.

Abstract: A display device includes a buffer layer disposed on a substrate and comprising a first buffer film, and a second buffer film, wherein the first buffer film and the second buffer film are sequentially stacked in a thickness direction of the display device; a semiconductor pattern disposed on the buffer layer; a gate insulating layer disposed on the semiconductor pattern; and a gate electrode disposed on the gate insulating layer, wherein the first buffer film and the second buffer film comprise a same material, and a density of the first buffer film is greater than a density of the second buffer film.