Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Abstract: A method of manufacturing an enhancement type semiconductor probe and an information storage device having the enhancement type semiconductor probe are provided. The method involves using an anisotropic wet etching and a side-wall in which influence of process parameters upon the performance of a device is reduced to improve reliability of the device in mass-production, and factors of degrading measuring sensitivity is removed to improve the performance of the device.

Abstract: A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

Abstract: A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.

Abstract: A method of manufacturing a probe includes: forming a first slant face of the probe through an anisotropic etching process using a first etching mask pattern formed on a silicon substrate; forming a first semiconductor electrode region; forming a second etching mask pattern in an opposite direction of the first etching mask pattern on the silicon substrate; forming a spacer layer on a side wall of the second etching mask pattern; forming a second slant face of the probe; forming a second semiconductor electrode region; forming a silicon oxide layer pattern on the resulting silicon substrate; forming spacer layers on both side walls of the silicon oxide layer pattern; and etching the silicon substrate to a predetermined depth.

Abstract: A method of manufacturing an electric field sensor having an electric field shield. The method includes providing a substrate doped with a first impurity; forming a resistive tip having a resistance region doped with a low concentration of a second impurity at an apex of a protruding portion of the substrate, and first and second semiconductor electrode regions doped with a high concentration of the second impurity on both slopes of the protruding portion with the resistive region therebetween, wherein the second impurity has a polarity opposite to that of the first impurity; forming a dielectric layer on the resistive tip; forming a mask having a high aspect ratio on the dielectric layer; depositing a metal layer on the dielectric layer; and exposing the dielectric layer formed on the resistance region through the metal layer by removing the mask.

Abstract: Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

Abstract: A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip.

Abstract: Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe.

Abstract: A fan assembly including a fan, a supporting case to cover an outer surface of the fan and to support the fan, and an anti vibration member interposed between the fan and the supporting case to prevent a vibration occurring in the fan from being transmitted to the supporting case.

Abstract: A projection television including a light source emitting light; and color wheel including a plurality of color filters provided in front of the light source and transmitting the light from the light source, a driver rotatably driving the plurality of color filters, and a supporter having a first side coupled to the driver and a second side coupled to the plurality of color filters so as to rotatably support the plurality of color filters, the driver being provided in a center portion of the color wheel, the plurality of color filters are provided around an edge of the color wheel being spaced from the driver, and a heat barrier being provided between the driver and the plurality of color filters to prevent heat generated due to the plurality of color filters from being transmitted to the driver.

Abstract: A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

Abstract: Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.

Abstract: Provided is a ferroelectric recording medium including a ferroelectric recording layer formed of a polarization reversal ferroelectric material and an anisotropic conduction layer that covers the ferroelectric recording layer and changes into a conductor or a non-conductor based on external energy.

Abstract: A semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe.

Abstract: A method of manufacturing a semiconductor probe having a resistive tip. The method includes forming first and second mask films having a rectangular shape on a silicon substrate, first etching an upper surface of the silicon substrate, forming a third mask film corresponding to a width of a tip neck by etching the first mask film, forming the width of the tip neck to a predetermined width by second etching of the silicon substrate using the third mask film as a mask, and forming a peak forming portion of the tip by annealing the silicon substrate after removing the third mask film. A semiconductor probe having a uniform height and tips having a uniform neck width can be manufactured.

Abstract: A method of writing data on a storage device using a probe technique. In the method of writing data on a memory device including a resistive probe used for reading and writing of data, a ferroelectric writing medium on which data is written by the resistive probe, and a lower electrode disposed on a bottom surface of the ferroelectric writing medium, heat and an electric field are applied simultaneously to a domain of the ferroelectric writing medium, on which the data will be written, by applying a voltage to the resistive probe and the lower electrode.

Abstract: The invention herein relates to a transdermal drug delivery systern for anti-Inflammatory analgesic. agent comprising diclofenac diethylammonium salt, wherein a backing film (1), a matrix layer (2) containing active ingredients, a release liner (3) which is removed before application onto the skin are laminated therein. Mome particularly, the invention herein relates to a transdermal drug delivery system for anti-inflammatory analgesic agent comprising diclofenac diethylammonum salt, wherein the transdermal penetration and adhesion of the patch to the body are enhanced by means of a matrix layer which comprises a diclofenac diethylammonum salt as active ingredient in addition to acrylic polymer as adhesive constituent, non-ionic surfacant as absorption enhancer, terpene and dissolution assistant, and the volatile and non-volatile constituents of the composition arc separately applied therein for significantly reducing the manufacturing time thereof.

Abstract: A method for optimally determining sensor positions for an acoustic pyrometry, capable of obtaining a minimum number of sensors satisfying a given error limit and determining positions of the obtained number of sensors for error minimization, in which a predetermined number of sensors are arbitrarily arranged on sides of a rectangular sectional area to be measured and a transfer matrix is calculated with respect to positions of all the sensors, with effective independence values obtained for respective paths of each of the sensors by performing singular value decomposition with respect to the calculated transfer matrix and a total effective independence value of each of the sensors is obtained by summing up the effective independence values obtained for the respective paths, followed by having a smallest one of the obtained total effective independence valves removed from among the sensors and the above steps are repeated until the number of the remaining sensors becomes equal to a target valve.

Abstract: The present invention is to provide a method and a transdermal drug delivery device for treating erectile dysfunction which comprises a patch containing pharmaceutically active ingredient and being directly apply to the male glans penis and its support and the rings for constricting the base part of the penis to aid the erection. The patch according to the present invention may be divided into two types, i.e. a cylinder type patch and a multi-reservoir type patch. The transdermal drug delivery patch device of the present invention is painless and safely to use and may be effectively produced and maintained erection of the penis without the adverse side effects and with a high degree of patient acceptability in the case of male impotence.