Abstract: Disclosed herein are an apparatus and a method for detecting a gyro sensor signal. The apparatus includes: a preamplifier unit outputting sensing voltage and inverse phase sensing voltage; a sample and hold unit holding the sensing voltage and the inverse phase sensing voltage for a predetermined period at a predetermined point in time; an averaging unit removing offset; a current passing unit providing a current path of output voltage of the averaging unit; a comparing unit comparing a signal output from the averaging unit and reference voltage with each other to output a comparison signal; and a pulse counter unit generating and outputting a count signal that is in proportion to a width of the comparison signal.

Abstract: Disclosed herein are an offset compensation apparatus for a magnetic detection circuit, and a method thereof. The offset compensation apparatus includes: an amplifying unit amplifying an output voltage, and outputting the amplified voltages; an offset detection unit detecting an offset; a comparison unit determining whether or not the offset output from the offset detection unit is greater than a pre-set positive reference value or smaller than a pre-set negative reference value; a counter unit; and a current supply.

Abstract: Laser crystallization equipment includes a laser generator generating a laser beam, the laser beam being directed toward a processing target substrate, and a blade member over the processing target substrate, the blade member being configured to chop the laser beam with a predetermined width in two directions, wherein two ends of the laser beam chopped by the blade member are irradiated to the processing target substrate as diffraction light.

Abstract: An organic light emitting display apparatus comprises an active layer, a gate electrode, a pixel electrode, source and drain electrodes, an intermediate layer, and an opposite electrode. The gate electrode includes: a first insulating layer; first, second and third conductive layers; a fourth conductive layer protecting the third conductive layer; and a fifth conductive layer. The pixel electrode includes a first electrode layer formed on the first insulating layer, a second and a third electrode layer, a fourth electrode layer protecting the third electrode layer, and a fifth electrode layer. A second insulating layer is disposed between the source and drain electrodes. The intermediate layer is disposed between the opposite electrode and the pixel electrode, and prevents damage to the pixel electrode during the manufacturing process.

Abstract: The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the thin film transistor and including a pixel electrode, an organic emission layer, and a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. The semiconductor layer is formed of a polycrystalline silicon layer where remnants and contaminants at the surface thereof are reduced or eliminated through an atmospheric pressure plasma treatment.

Abstract: There are provided a Schmitt trigger circuit that has hysteresis characteristics in which a release point and an operating point are determined based on a width of an inputted pulse.

Abstract: Disclosed herein are an offset compensation apparatus for a magnetic detection circuit, and a method thereof. The offset compensation apparatus includes: an amplifying unit amplifying an output voltage, and outputting the amplified voltages; an offset detection unit detecting an offset; a comparison unit determining whether or not the offset output from the offset detection unit is greater than a pre-set positive reference value or smaller than a pre-set negative reference value; a counter unit; and a current supply.

Abstract: There are provided a hall sensor having an offset removal function removing an offset included in a hall voltage, and an offset removing method thereof. The hall sensor includes: a converting unit converting first and second detection voltages detected for each of a plurality of preset detection directions by a hall device detecting a magnetic field as a voltage according to the plurality of preset detection directions into a pulse having a level difference therebetween as a width; a sign determining unit comparing the first and second detection voltages with each other and determining whether the pulse has a positive sign or a negative sign according to the comparison result; a counter counting the width of the pulse from the converting unit with a preset reference time unit; and an operating unit removing an offset voltage included in the first and second detection voltages by performing a minus operation with the numbers counted by the counter according to the sign determined by the sign determining unit.

Abstract: There is provided a current circuit having a selective temperature coefficient. The current circuit may include: a first current generating unit generating a first current having a positive temperature characteristic which increases depending on temperature; a second current generating unit generating a second current having a negative temperature characteristic which decreases depending on temperature; a multiplying unit multiplying and outputting each of the first current and the second current; and a switching unit selectively synthesizing and outputting a plurality of currents outputted from the multiplying unit depending on on/off control signals. Therefore, it is possible to prevent performance from being deteriorated by temperature and easily and efficiently adjust a temperature coefficient through a simple switching logic.

Abstract: An organic light emitting display apparatus comprises an active layer, a gate electrode, a pixel electrode, source and drain electrodes, an intermediate layer, and an opposite electrode. The gate electrode includes: a first insulating layer; first, second and third conductive layers; a fourth conductive layer protecting the third conductive layer; and a fifth conductive layer. The pixel electrode includes a first electrode layer formed on the first insulating layer, a second and a third electrode layer, a fourth electrode layer protecting the third electrode layer, and a fifth electrode layer. A second insulating layer is disposed between the source and drain electrodes. The intermediate layer is disposed between the opposite electrode and the pixel electrode, and prevents damage to the pixel electrode during the manufacturing process.

Abstract: There are provided a Schmitt trigger circuit that has hysteresis characteristics in which a release point and an operating point are determined based on a width of an inputted pulse.

Abstract: The described technology relates generally to an OLED display and manufacturing method thereof. The OLED display includes a substrate, a thin film transistor on the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode, and an organic light emitting element coupled to the thin film transistor and including a pixel electrode, an organic emission layer, and a common electrode, wherein the semiconductor layer is formed of a polycrystalline silicon layer, and remnants and contaminants at a surface of the polycrystalline silicon layer are reduced or eliminated through an atmospheric pressure plasma treatment. The semiconductor layer is formed of a polycrystalline silicon layer where remnants and contaminants at the surface thereof are reduced or eliminated through an atmospheric pressure plasma treatment.

Abstract: There is provided a hydraulic damper installed to furniture, such as a sink or wardrobe, for buffering a door. In a buffer for absorbing shock created when a furniture door is closed, the buffer including a cylinder 10 having a cylinder chamber, and a piston 30 inserted in the cylinder chamber, supported by a rod 70 penetrating a packing 60 and a sealing housing 65, and urged by a first resilient spring 40 built in the housing, the buffer includes a pressing bracket 50, mounted to an end of the rod 70, for moving oil in the piston; an oil flow blocking housing 45 mounted to a boss 52 forming an end of the pressing bracket 50 and connected to the first resilient spring 40; and a second resilient spring 55, interposed between the oil flow blocking housing 45 and the pressing bracket 50, for providing the oil flow blocking housing 45 with a return force.

Abstract: An interface device and method thereof interfacing between a host processor and a NAND flash memory includes a register file, an internal memory, a flash interface portion, and a finite state machine. The register file receive a command from the host processor to control an operation of the NAND flash memory and an operation information to execute the command and storing the command and the operation information. The flash interface portion controls a control signal to operate the NAND flash memory, outputs the command, the operation information, or the host data, and controls an I/O signal wire through which the flash data is inputted to the NAND flash memory. The finite state machine extracts the command and the operation information from the register file and controls the internal memory and the flash interface portion to execute the command.

Abstract: An interface device and method thereof interfacing between a host processor and a NAND flash memory includes a register file, an internal memory, a flash interface portion, and a finite state machine. The register file receive a command from the host processor to control an operation of the NAND flash memory and an operation information to execute the command and storing the command and the operation information. The flash interface portion controls a control signal to operate the NAND flash memory, outputs the command, the operation information, or the host data, and controls an I/O signal wire through which the flash data is inputted to the NAND flash memory. The finite state machine extracts the command and the operation information from the register file and controls the internal memory and the flash interface portion to execute the command.