Abstract: A showerhead for film-depositing vacuum equipment having an effect shortening the length of injection tubes for a reactive gas is presented. The injection tubes extend from the bottom of a reactive gas showerhead module, and two different kinds of reactive gases are mixed with an injection support gas within a reactive showerhead module so as to inject the mixed gas. The showerhead for film-depositing vacuum equipment includes the reactive gas showerhead module above a cooling jacket and a purge gas showerhead module above the reactive gas showerhead module. The injection tubes of the reactive gas showerhead module pass through the cooling jacket disposed below the reactive gas showerhead module, and the injection tubes of the purge gas showerhead module pass through the reactive gas showerhead module disposed below the purge gas showerhead module, thereby enabling the purge gas to flow into a purge gas redistribution space defined above the cooling jacket.

Abstract: A showerhead for film-depositing vacuum equipment having an effect shortening the length of injection tubes for a reactive gas is presented. The injection tubes extend from the bottom of a reactive gas showerhead module, and two different kinds of reactive gases are mixed with an injection support gas within a reactive showerhead module so as to inject the mixed gas. The showerhead for film-depositing vacuum equipment includes the reactive gas showerhead module above a cooling jacket and a purge gas showerhead module above the reactive gas showerhead module. The injection tubes of the reactive gas showerhead module pass through the cooling jacket disposed below the reactive gas showerhead module, and the injection tubes of the purge gas showerhead module pass through the reactive gas showerhead module disposed below the purge gas showerhead module, thereby enabling the purge gas to flow into a purge gas redistribution space defined above the cooling jacket.

Abstract: A method for chemical vapor deposition (CVD) comprises injecting a purge gas into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material.

Abstract: Disclosed relates to a method for CVD comprises steps of injecting a purge gas, which doesn't either dissolve or generate byproducts by itself, into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material.

Abstract: Disclosed relates to a method for CVD comprises steps of injecting a purge gas, which doesn't either dissolve or generate byproducts by itself, into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material.

Abstract: Disclosed relates to a method for CVD comprises steps of injecting a purge gas, which doesn't either dissolve or generate byproducts by itself, into a reaction chamber where substrates are located; and supplying a source material of vapor phase participating directly in forming a film on the substrates to an inside of the reaction chamber, thus forming a protective curtain in the inside of the reaction chamber by a mutual diffusion-suppressing action between the purge gas and source material.