Abstract: A 0.98 &mgr;m semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 &mgr;m on the basic of end portion of an output facet along length direction of a resonator; and a non-waveguide region in the end portion of both sides of a resonator.

Abstract: A 0.98 &mgr;m semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 &mgr;m on the basic of end portion of an output facet along length direction of a resonator; and a non-waveguide region in the end portion of both sides of a resonator.

Abstract: There is disclosed a method of manufacturing a heterojunction bipolar transistor.

Abstract: A method of forming a gate electrode of a compound semiconductor device includes forming a first insulating film pattern having a first aperture, forming a second insulating film pattern having a second aperture consisting of inverse V-type on the first insulating film pattern, forming a T-type gate electrode by depositing a conductivity film on the entire structure, removing a second insulating film pattern, forming a insulating spacer on a pole sidewall by etching a first insulating film pattern, and forming an ohmic electrode of the source and drain by self-aligning method using T-type gate electrode as a mask. Thereby T-type gate electrode of materials such as refractory metals can be prevented to be deteriorate because of high annealing, as well as it is stably formed, by using an insulating film. Ohmic metal and gate electrodes formed by self-aligning method can be prevented an interconnection by forming an insulating film spacer between these electrodes.

Abstract: The present invention relates to high power semiconductor laser device and method for fabricating the same utilizing ion implanting process, by which a beam steering phenomenon of an optical output due to filaments is eliminated. This elimination is achieved by a periodically varying gain given for a resonator of the semiconductor laser device. That is, this invention changes a gain distribution which causes the generation of filaments in the resonator into different distribution. According to the present invention, there is formed an insulation layer through ion implantation to an active layer to adjust current density implanted to the active layer, thereby eliminating non-uniform distribution of the light along the longitudinal direction of the resonator.

Abstract: This invention provides infrared sensing photodetector and a method therefor which provides a structure for effectively absorbing a light incident in a normal direction on a substrate, and a method compatible with existing processes for making integrated circuitry.

Abstract: A method for making a T-shaped gate of a field effect transistor is disclosed. The method includes the steps of sequentially depositing first and second photoresist layers on a semiconductor substrate and performing an exposure using electron beams having different energy, one of the electron beams having a first energy to lightly expose only the second photoresist layer and the other of the electron beams having a second energy to lightly expose all of the first and second layers. The invention reduces gate resistance and parasitic capacitance of the T-shaped gate.

Abstract: A production method for ion-implanted MESFET having self-aligned LDD structure and T-type gate, that the reverse mesa portion is formed at a predetermined part of the channel region which the source and drain regions are formed at both side by using caps layer, the ion is injected between the source and drain regions and the channel region as the small energy and low concentration by using the reverse mesa as the mask, the source and drain regions of the low concentration is formed so that drain part has more broadly than source part, and the gate electrode and the source and drain regions of the low concentration are not contacted at the formed groove which is removed the surface of the reverse mesa portion or the reverse mesa portion.

Abstract: A flat display device has a plurality of pixels and a plurality of micro light valves which correspond to each of the pixels thereof, and has a plurality of selection lines and data lines disposed in a matrix the micro light valves each comprise a data electrode to be connected with each of the data lines through a via, a selection electrode to be connected with each of the selection lines, a common electrode formed between the selection and data electrodes, a frame, and a shifting element capable of being moved in the frame by driving signals to be applied to the data and selection electrodes, so as to pass or shut off a light beam. A first driving means is connected to the respective selection lines, for supplying a predetermined selection signal for said light valves; and a second driving means is connected to the respective data lines, for supplying a predetermined data signal for said light valve.