Abstract: A method of activating a secondary battery includes an operation of deriving a reduction reaction voltage according to an electrolyte additive, a pre-charging operation of pre-charging the secondary battery into which an electrolyte containing the electrolyte additive is injected, and a pre-aging operation of wetting an electrode assembly accommodated in the secondary battery with the injected electrolyte and aging the electrode assembly. A charging termination voltage in the pre-charging operation is less than the reduction reaction voltage.

Abstract: An operation method of a switch apparatus in an Ethernet-based vehicle network, includes: receiving a first frame including original data from an end node; generating a second frame including the original data; duplicating the original data to generate duplicated data; and generating a third frame including the duplicated data and an indicator indicating that the third frame includes the duplicated data.

Abstract: An operation method of a switch apparatus in an Ethernet-based vehicle network, includes: receiving a first frame including original data from an end node; generating a second frame including the original data; duplicating the original data to generate duplicated data; and generating a third frame including the duplicated data and an indicator indicating that the third frame includes the duplicated data.

Abstract: A method for fabricating a T-shaped gate electrode of a high speed semiconductor device such as HEMTs which is applied to high speed logic circuit including low-noise receivers and power amplifiers having a frequency of X-band or more respectively, and MMICs having a frequency of millimeter wave band. Such devices require a short gate length and a large sectional area of the gate pattern. The conventional photolithography techniques are in need of the resolution for fabricating a fine line width. Therefore, electron-beam lithography is most widely used. But, it is difficult to enhance throughput in manufacturing semiconductor devices because a lot of exposure time is required in the methods using electron beams. In the present invention, a silicon oxide film or a silicon nitride film is deposited on a mono-layered resist pattern. A dummy pattern corresponding to a leg of the gate is formed using the silicon oxide film or the silicon nitride film.

Abstract: The invention relates to a method of fabricating a compound semiconductor device by forming a first and a second compound semiconductor devices having a plurality of different epitaxial layers on a common semiconductor substrate.

Abstract: A method for fabricating a T-shaped gate electrode includes the steps of: forming a fine gate pattern on a semiconductor substrate; forming an insulating layer on the semiconductor substrate on which the gate pattern is formed, and forming a planarizing layer on the insulating layer to planarize the surface of the semiconductor substrate; etching the planarizing layer to expose the top of the insulating layer; isotropically etching the insulating layer to expose the gate pattern using the planarizing layer as a mask; etching the exposed gate pattern to selectively expose the semiconductor substrate; depositing a gate metal to cover the exposed substrate, the insulating layer and the planarizing layer, to form a T-shaped gate; and simultaneously removing the planarizing layer, thereby forming a T-shaped gate metal with improved productivity.

Abstract: A method for isolating a semiconductor device is disclosed including the steps of sequentially growing a plurality of material layers on a semiconductor substrate, etching the material layers down to a predetermined depth of the substrate to thereby define an active region, forming a semi-insulating film on the exposed semiconductor substrate in order to planarize the step-difference of the active region and the isolation region, and then, forming an ohmic metal layer on a space where the semi-insulating film is regrown.