Patents by Inventor Chul Whang-Bo

Chul Whang-Bo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Chemical vapor deposition method for depositing silicide and apparatus for performing the same
    Publication number: 20030219536
    Abstract: A chemical vapor deposition (CVD) method for depositing a silicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.
    Type: Application
    Filed: June 24, 2003
    Publication date: November 27, 2003
    Inventors: Ju-Cheol Shin, In-Sun Park, Young-Cheon Kim, Chul Whang-Bo, Hyeon-Deok Lee
  • Chemical vapor deposition method for depositing silicide and apparatus for performing the same
    Patent number: 6623798
    Abstract: A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.
    Type: Grant
    Filed: June 21, 2001
    Date of Patent: September 23, 2003
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-Cheol Shin, In-Sun Park, Young-Cheon Kim, Chul Whang-Bo, Hyeon-Deok Lee
  • Chemical vapor deposition method for depositing silicide and apparatus for performing the same
    Publication number: 20020014205
    Abstract: A chemical vapor deposition (CVD) method for depositing a suicide and a CVD system for performing the same are disclosed. A silicide is deposited on a substrate. Residual gases remaining from the depositing step are purged out by flowing air including H2O (g), to substantially remove fumes caused by the residual gases. In the purge step, the cycle purge is carried out at the conditions similar to the flow of atmosphere, to substantially remove the fumes.
    Type: Application
    Filed: June 21, 2001
    Publication date: February 7, 2002
    Inventors: Ju-Cheol Shin, In-Sun Park, Young-Cheon Kim, Chul Whang-Bo, Hyeon-Deok Lee