Abstract: The present invention relates to a novel compound capable of effectively preventing and treating immune diseases and a use thereof.

Abstract: A semiconductor memory device includes a normal data storage block configured to store a normal data, a setup data storage block for storing a setup data including at least two duplicate data, an access unit configured to access the normal data of the normal data storage block or the setup data of the setup data storage block, a first transfer unit configured to transfer the setup data accessed by the access unit, a data decision unit configured to determine a correct data based on the setup data transferred by the first transfer unit, a second transfer unit configured to transfer the normal data accessed by the access unit, and a data output unit configured to output the setup data transferred by the first transfer unit or the normal data transferred by the second transfer unit to the outside of the semiconductor memory device in response to a control signal.

Abstract: The present invention relates to a mesenchymal stem cell having immunomodulatory activity and a preparation method therefor and, more specifically, to: a rapamycin-treated mesenchymal stem cell having immunomodulatory activity, which expresses any one or more cell surface factors selected from the group consisting of CCR1, CCR2, CCR3, CCR4, CCR7, CCR9 and CXCR4; a cell therapy composition comprising the mesenchymal stem cell, for preventing or treating immune disorders; and a preparation method for the mesenchymal stem cell having immunomodulatory activity. The rapamycin-treated mesenchymal stem cell having immunomodulatory activity, according to the present invention, has increased expression of IDO, TGF-? and IL-10 which are factors having immunomodulatory activity, has decreased expression of Phospho-mTOR, Rictor and Ractor which are signal transduction factors of mTOR, and has increased expression, in the cell, of autophagic inducer Beclin1, ATG5, ATG7, LC3I or LCII.

Abstract: The present invention relates to a method and a kit for monitoring an immune status after transplant. The kit for monitoring an immune status after transplant and the method for monitoring an immune status of an individual after transplant as provided in the present invention make it easy and accurate to determine an immune status in the individual after transplant and thus have an effect of reducing overuse of an immunosuppressive agent prescribed after transplant and also have an effect of conveniently managing an immune status of each patient.

Abstract: A semiconductor device includes a memory block including memory cells for storing program data and one or more flag cells for storing erase state information, an operation circuit suitable for performing a program operation, an erase operation, and a read operation on the memory cells and the flag cell, and a data conversion circuit suitable for encoding read data read from the memory cells based on the erase state information.

Abstract: A semiconductor device includes a memory block including memory cells for storing program data and one or more flag cells for storing erase state information, an operation circuit suitable for performing a program operation, an erase operation, and a read operation on the memory cells and the flag cell, and a data conversion circuit suitable for encoding read data read from the memory cells based on the erase state information.

Abstract: A nonvolatile memory apparatus includes: a memory cell area including a plurality of memory cells connected to a word line and a bit line; a program time controller configured to determine a program voltage application time for a selected word line, as the selected word line is selected in response to a program command and an address signal; and a controller configured to apply a program voltage to the selected word line according to the program voltage application time determined by the program time controller.

Abstract: The present invention relates to a method and a kit for monitoring an immune status after transplant. The kit for monitoring an immune status after transplant and the method for monitoring an immune status of an individual after transplant as provided in the present invention make it easy and accurate to determine an immune status in the individual after transplant and thus have an effect of reducing overuse of an immunosuppressive agent prescribed after transplant and also have an effect of conveniently managing an immune status of each patient.

Abstract: A nonvolatile memory apparatus includes: a memory cell area including a plurality of memory cells connected to a word line and a bit line; a program time controller configured to determine a program voltage application time for a selected word line, as the selected word line is selected in response to a program command and an address signal; and a controller configured to apply a program voltage to the selected word line according to the program voltage application time determined by the program time controller.

Abstract: A non-volatile memory device, a method for controlling the same, and a data processing system using the device and method are disclosed, which relates to a technology for controlling operations of a flash memory device. The non-volatile memory device comprises a cell array configured to comprise a plurality of cells coupled between a word line and a bit line; a drive controller configured to calculate a constant value corresponding to variation in word-line resistance values measured at individual word-line positions, combine the constant value with a word-line address, and set a rising time of the word line; and a voltage provider configured to provide a bias voltage in response to the rising time set in the drive controller.

Abstract: An apparatus and a method edit an image in a portable terminal, with the method including displaying one or more icons indicating stylus pen functions; when a highlighter icon corresponding to a highlighter function is selected among the displayed icons, displaying a text selected by a stylus pen in an image in a preset fluorescent color; and storing the displayed text in accordance with the fluorescent color.

Abstract: A method of operating a nonvolatile memory device comprises reading erase number information which is updated and stored whenever erasure is performed, setting program start voltages and step voltages based on the erase number information, and performing a program operation based on the program start voltages and the step voltages.

Abstract: A nonvolatile memory apparatus includes: a memory cell area including a plurality of memory cells connected to a word line and a bit line; a program time controller configured to determine a program voltage application time for a selected word line, as the selected word line is selected in response to a program command and an address signal; and a controller configured to apply a program voltage to the selected word line according to the program voltage application time determined by the program time controller.

Abstract: A data erasing method of a semiconductor memory apparatus may include: if any one threshold voltage of a plurality of memory cells, for which an erase operation has been performed using an erase voltage pulse, is higher than an erase verification voltage, increasing a voltage level of the erase verification voltage applied to a plurality of word lines of the plurality of memory cells until the threshold voltage of the plurality of memory cells is lower than the erase verification voltage, and increasing a voltage level of the erase voltage pulse by an increased voltage level of the erase verification voltage and applying the erase voltage pulse to the plurality of memory cells.

Abstract: A semiconductor memory device includes a normal data storage block configured to store a normal data, a setup data storage block for storing a setup data including at least two duplicate data, an access unit configured to access the normal data of the normal data storage block or the setup data of the setup data storage block, a first transfer unit configured to transfer the setup data accessed by the access unit, a data decision unit configured to determine a correct data based on the setup data transferred by the first transfer unit, a second transfer unit configured to transfer the normal data accessed by the access unit, and a data output unit configured to output the setup data transferred by the first transfer unit or the normal data transferred by the second transfer unit to the outside of the semiconductor memory device in response to a control signal.

Abstract: A method of operating a nonvolatile memory device comprises reading erase number information which is updated and stored whenever erasure is performed, setting program start voltages and step voltages based on the erase number information, and performing a program operation based on the program start voltages and the step voltages.

Abstract: A data erasing method of a semiconductor memory apparatus may include: if any one threshold voltage of a plurality of memory cells, for which an erase operation has been performed using an erase voltage pulse, is higher than an erase verification voltage, increasing a voltage level of the erase verification voltage applied to a plurality of word lines of the plurality of memory cells until the threshold voltage of the plurality of memory cells is lower than the erase verification voltage, and increasing a voltage level of the erase voltage pulse by an increased voltage level of the erase verification voltage and applying the erase voltage pulse to the plurality of memory cells.

Abstract: A counting circuit includes first to fifth flip-flops (FFs) and a logic operation unit. Each of the first to fourth FFs has an initial value based on a preset control signal input through a 4-bit set terminal. Each of the first to fourth FFs receives a signal at a corresponding input terminal. And each of the first to fourth FFs outputs a signal at a corresponding output terminal according to a clock signal. The fifth FF is coupled to the output terminal of the fourth FF and is configured to output the output signal of the fourth FF synchronously with the clock signal. The logic operation unit logically combines the output signals of the second to fourth FFs and outputs first and second counting signals.

Abstract: A counting circuit includes first to fifth flip-flops (FFs) and a logic operation unit. Each of the first to fourth FFs has an initial value based on a preset control signal input through a 4-bit set terminal. Each of the first to fourth FFs receives a signal at a corresponding input terminal. And each of the first to fourth FFs outputs a signal at a corresponding output terminal according to a clock signal. The fifth FF is coupled to the output terminal of the fourth FF and is configured to output the output signal of the fourth FF synchronously with the clock signal. The logic operation unit logically combines the output signals of the second to fourth FFs and outputs first and second counting signals.

Abstract: A method of programming a nonvolatile memory device includes an inputting step for inputting program data to a first latch of each of page buffers, and inputting redundancy data to a second latch of each of the page buffers, a verification result storage step for performing a program operation on selected memory cells using the program data stored in the first latch, performing a verification operation for the program operation, and storing a result of the verification operation in the first latch of each of the page buffers coupled with the selected memory cells, a verification result change step for changing the result stored in the first latch using the redundancy data stored in the second latch, and a verification check step for determining whether all data stored in the second latches, after the verification result change step, are program pass data.