Patents by Inventor Chul Woong Lee
Chul Woong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11975076Abstract: The present invention relates to antibody-drug conjugates (ADCs) wherein a plurality of active agents are conjugated to an antibody through at least one branched linker. The branched linker may comprise a branching unit, and two active agents are coupled to the branching unit through a secondary linker and the branching unit is coupled to the antibody by a primary linker. The active agents may be the same or different. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g., 2-4 branched linkers, which may each be coupled to a different C-terminal cysteine of a heavy or light chain of the antibody. The branched linker may comprise one active agent coupled to the branching unit by a first branch and a second branch that comprises a polyethylene glycol moiety coupled to the branching unit. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g.Type: GrantFiled: November 12, 2021Date of Patent: May 7, 2024Assignee: LegoChem Biosciences, Inc.Inventors: Yong Zu Kim, Yeong Soo Oh, Jeiwook Chae, Ho Young Song, Chul-Woong Chung, Yun Hee Park, Hyo Jung Choi, Kyung Eun Park, Hyoungrae Kim, Jinyeong Kim, Ji Young Min, Sung Min Kim, Byung Soo Lee, Dong Hyun Woo, Ji Eun Jung, Su In Lee
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Patent number: 11795249Abstract: Provided are a novel structure of a copolymer, a preparation method thereof, a vinyl chloride-based resin composition including the copolymer, and a coating ink including the vinyl chloride-based resin composition. According to the present invention, when the vinyl chloride-based resin composition including the copolymer is used, compatibility with ethylene vinyl acetate is excellent, and ink dispersibility and ink color are also excellent.Type: GrantFiled: July 24, 2019Date of Patent: October 24, 2023Assignee: HANWHA SOLUTIONS CORPORATIONInventors: Moon Soo Gil, Chul-Woong Lee, Hyeok Chil Kwon
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Publication number: 20210261810Abstract: Provided are a novel structure of a copolymer, a preparation method thereof, a vinyl chloride-based resin composition including the copolymer, and a coating ink including the vinyl chloride-based resin composition. According to the present invention, when the vinyl chloride-based resin composition including the copolymer is used, compatibility with ethylene vinyl acetate is excellent, and ink dispersibility and ink color are also excellent.Type: ApplicationFiled: July 24, 2019Publication date: August 26, 2021Inventors: Moon Soo GIL, Chul-Woong LEE, Hyeok Chil KWON
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Patent number: 10418284Abstract: Semiconductor devices and methods of fabricating the same are provided. The semiconductor devices may include gate electrodes on a substrate. A longitudinal direction of each of the gate electrodes may extend in a first direction, and ones of the gate electrodes may be arranged in the first direction. The semiconductor devices may also include first and second gate spacers extending in the first direction and on respective sidewalls of the ones of the gate electrodes. The first and second gate spacers may be spaced apart from each other in a second direction that is different from the first direction. The semiconductor devices may further include gate separation patterns, and ones of the gate separation patterns may be between two among the ones of the gate electrodes adjacent to each other in the first direction and between the first and second gate spacers.Type: GrantFiled: January 29, 2018Date of Patent: September 17, 2019Assignee: Samsung Electronics Co., Ltd.Inventors: Chul Woong Lee, Hanseung Kwak, Youngmook Oh
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Publication number: 20180151447Abstract: Semiconductor devices and methods of fabricating the same are provided. The semiconductor devices may include gate electrodes on a substrate. A longitudinal direction of each of the gate electrodes may extend in a first direction, and ones of the gate electrodes may be arranged in the first direction. The semiconductor devices may also include first and second gate spacers extending in the first direction and on respective sidewalls of the ones of the gate electrodes. The first and second gate spacers may be spaced apart from each other in a second direction that is different from the first direction. The semiconductor devices may further include gate separation patterns, and ones of the gate separation patterns may be between two among the ones of the gate electrodes adjacent to each other in the first direction and between the first and second gate spacers.Type: ApplicationFiled: January 29, 2018Publication date: May 31, 2018Inventors: Chul Woong LEE, Hanseung KWAK, Youngmook OH
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Patent number: 9911659Abstract: Semiconductor devices and methods of fabricating the same are provided. The semiconductor devices may include gate electrodes on a substrate. A longitudinal direction of each of the gate electrodes may extend in a first direction, and ones of the gate electrodes may be arranged in the first direction. The semiconductor devices may also include first and second gate spacers extending in the first direction and on respective sidewalls of the ones of the gate electrodes. The first and second gate spacers may be spaced apart from each other in a second direction that is different from the first direction. The semiconductor devices may further include gate separation patterns, and ones of the gate separation patterns may be between two among the ones of the gate electrodes adjacent to each other in the first direction and between the first and second gate spacers.Type: GrantFiled: June 22, 2016Date of Patent: March 6, 2018Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Chul Woong Lee, Hanseung Kwak, Youngmook Oh
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Patent number: 9786785Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.Type: GrantFiled: March 28, 2016Date of Patent: October 10, 2017Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kook-Tae Kim, Young-Tak Kim, Ho-Sung Son, Seok-Jun Won, Ji-Hye Yi, Chul-Woong Lee
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Patent number: 9768300Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.Type: GrantFiled: January 13, 2017Date of Patent: September 19, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Suk Shin, Hyun-Chul Kang, Dong-Hyun Roh, Pan-Kwi Park, Geo-Myung Shin, Nae-In Lee, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim
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Patent number: 9741855Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.Type: GrantFiled: December 29, 2016Date of Patent: August 22, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Suk Shin, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim, Nae-In Lee
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Publication number: 20170186869Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.Type: ApplicationFiled: January 13, 2017Publication date: June 29, 2017Inventors: Dong-Suk SHIN, Hyun-Chul KANG, Dong-Hyun ROH, Pan-Kwi PARK, Geo-Myung SHIN, Nae-In LEE, Chul-Woong LEE, Hoi-Sung CHUNG, Young-Tak KIM
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Publication number: 20170110581Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.Type: ApplicationFiled: December 29, 2016Publication date: April 20, 2017Inventors: Dong-Suk SHIN, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim, Nae-In Lee
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Publication number: 20170025511Abstract: Semiconductor devices and methods of fabricating the same are provided. The semiconductor devices may include gate electrodes on a substrate. A longitudinal direction of each of the gate electrodes may extend in a first direction, and ones of the gate electrodes may be arranged in the first direction. The semiconductor devices may also include first and second gate spacers extending in the first direction and on respective sidewalls of the ones of the gate electrodes. The first and second gate spacers may be spaced apart from each other in a second direction that is different from the first direction. The semiconductor devices may further include gate separation patterns, and ones of the gate separation patterns may be between two among the ones of the gate electrodes adjacent to each other in the first direction and between the first and second gate spacers.Type: ApplicationFiled: June 22, 2016Publication date: January 26, 2017Inventors: Chul Woong LEE, Hanseung KWAK, Youngmook OH
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Patent number: 9548301Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.Type: GrantFiled: January 28, 2016Date of Patent: January 17, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Suk Shin, Hyun-Chul Kang, Dong-Hyun Roh, Pan-Kwi Park, Geo-Myung Shin, Nae-In Lee, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim
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Patent number: 9537009Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.Type: GrantFiled: December 1, 2015Date of Patent: January 3, 2017Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Suk Shin, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim, Nae-In Lee
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Patent number: 9520497Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.Type: GrantFiled: November 25, 2015Date of Patent: December 13, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Suk Shin, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim, Nae-In Lee
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Publication number: 20160211378Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.Type: ApplicationFiled: March 28, 2016Publication date: July 21, 2016Inventors: Kook-Tae KIM, Young-Tak KIM, Ho-Sung SON, Seok-Jun WON, Ji-Hye YI, Chul-Woong LEE
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Patent number: 9397216Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast etching region comprising phosphorous in an active region and forming a first trench in the active region by recessing the fast etching region. The methods may also include forming a second trench in the active region by enlarging the first trench using a directional etch process and forming a stressor in the second trench. The second trench may include a notched portion of the active region.Type: GrantFiled: November 11, 2015Date of Patent: July 19, 2016Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Suk Shin, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim, Nae-In Lee
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Publication number: 20160148930Abstract: Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region.Type: ApplicationFiled: January 28, 2016Publication date: May 26, 2016Inventors: Dong-Suk Shin, Hyun-Chul Kang, Dong-Hyun Roh, Pan-Kwi Park, Geo-Myung Shin, Nae-In Lee, Chul-Woong Lee, Hoi-Sung Chung, Young-Tak Kim
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Patent number: 9312376Abstract: Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.Type: GrantFiled: January 15, 2014Date of Patent: April 12, 2016Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kook-Tae Kim, Young-Tak Kim, Ho-Sung Son, Seok-Jun Won, Ji-Hye Yi, Chul-Woong Lee
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Patent number: RE49957Abstract: Provided are a method and apparatus for providing and using content advisory (CA) information on Internet contents. A method of providing CA information by using a CA information server, includes receiving a request for the CA information on a content, from an Internet Protocol television (IPTV); searching for CA information on the content; and transmitting the found CA information to the IPTV. A method of using CA information when an IPTV reproduces a content not having the CA information, according to the present invention, includes transmitting a request for CA information, to a CA information server; receiving the CA information from the CA information server; analyzing the CA information; and applying the CA information.Type: GrantFiled: May 29, 2020Date of Patent: April 30, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung-shin Park, Kwang-hyuk Kim, Sung-wook Ahn, Sung-wook Byun, Sang-woong Lee, Eun-Hee Rhim, O-hoon Kwon, Sung-jin Park, In-chul Hwang, Mun-jo Kim