Patents by Inventor Chul-Yong Lee

Chul-Yong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6214189
    Abstract: A method and an apparatus for electrokinetically decontaminating the soil contained in a radioactive waste drum are disclosed. The radioactively contaminated soil is put into drums, and the drums are carried to a temporary storage or to a disposal site. If the extremely low level radioactive soil is decontaminated rather than carrying the soil to the temporary storage or to a disposal site, and if the decontaminated soil is returned to the nature, then the limited storage capacity can be saved. Further, if a high level radioactive soil is treated to a low level one, and if thus a low level radioactive soil is stored in a storage, then the safety is improved. In the present invention, electrodes are buried into the contaminated soil contained in a radioactive waste drum, and a dc current is supplied, so that the radioactive nuclide and impurities can be removed by the electroosmosis and the electromigration.
    Type: Grant
    Filed: January 22, 1999
    Date of Patent: April 10, 2001
    Assignees: Korea Atomic Energy Research Institute, Korea Electric Power Corporation
    Inventors: Hui-Jun Won, Byung-Gil Ahn, Gye-Nam Kim, Hoy-Sam Kwon, Chul-Yong Lee, Chong-Hun Jung, Byung-Jik Lee, Won-Zin Oh
  • Patent number: 5968850
    Abstract: A wiring according to the present invention is made of a chromium layer and a chromium nitride layer. To make the wiring, a layer of chromium is deposited on a substrate, and then a layer of chromium nitride is deposited. A layer of photoresist is covered on the layer of chromium nitride and patterned, the layers of chromium and chromium nitride are wet etched in sequence using the photoresist pattern as a mask. Since the layer of chromium nitride is etched more quickly than the layer of chromium, the layer of photoresist and the layer of chromium are separated from each other and the chromium layer is isotropically etched to form a pattern having an edge with a gentle slope.
    Type: Grant
    Filed: October 9, 1997
    Date of Patent: October 19, 1999
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Jong-In Jeong, Cheol-Su Jeong, Dae-Won Park, Chul-Yong Lee, Chul-Ho Kwon