Abstract: The present invention provides a pharmaceutical composition for prevention or treatment of a stress disease and depression, the pharmaceutical composition be safely useable without toxicity and side effects by using an extract of leaves of Vaccinium bracteatum Thunb., which is natural resource of Korea, so that the reduction of manufacturing and production costs and the import substitution and export effects can be expected through the replacement of a raw material for preparation with a plant inhabiting in nature.

Abstract: The present invention relates to: a prime editing composition comprising a prime editor protein or a nucleic acid encoding same, and a prime editing guide RNA (pegRNA); and a prime editing method.

Abstract: The present invention provides a method for inducing an inversion of normal blood coagulation factor VIII (F8) gene, a method for correcting an inversion of blood coagulation factor VIII gene in which the inversion has occurred, and a Hemophilia A patient-derived induced pluripotent stem cell in which the inversion is corrected, constructed using the same. The method of the present invention effectively reproduces the inversion of intron 1 and intron 22 of the F8 gene, which is responsible for the majority of severe hemophilia A, and thereby may be effectively used for studying the development mechanism of hemophilia A and as a research tool for screening therapeutic agents. The inversion-corrected induced pluripotent stem cell constructed according the method of the present invention enables an efficient and fundamental treatment for hemophilia A by restoring a genotype in which mutation has occurred to a wild type-like state, without limitation via normal gene or protein delivery.

Abstract: The present invention provides a method for inducing an inversion of normal blood coagulation factor VIII (F8) gene, a method for correcting an inversion of blood coagulation factor VIII gene in which the inversion has occurred, and a Hemophilia A patient-derived induced pluripotent stem cell in which the inversion is corrected, constructed using the same. The method of the present invention effectively reproduces the inversion of intron 1 and intron 22 of the F8 gene, which is responsible for the majority of severe hemophilia A, and thereby may be effectively used for studying the development mechanism of hemophilia A and as a research tool for screening therapeutic agents. The inversion-corrected induced pluripotent stem cell constructed according the method of the present invention enables an efficient and fundamental treatment for hemophilia A by restoring a genotype in which mutation has occurred to a wild type-like state, without limitation via normal gene or protein delivery.

Abstract: The present invention provides a method for inducing an inversion of normal blood coagulation factor VIII (F8) gene, a method for correcting an inversion of blood coagulation factor VIII gene in which the inversion has occurred, and a Hemophilia A patient-derived induced pluripotent stem cell in which the inversion is corrected, constructed using the same. The method of the present invention effectively reproduces the inversion of intron 1 and intron 22 of the F8 gene, which is responsible for the majority of severe hemophilia A, and thereby may be effectively used for studying the development mechanism of hemophilia A and as a research tool for screening therapeutic agents. The inversion-corrected induced pluripotent stem cell constructed according the method of the present invention enables an efficient and fundamental treatment for hemophilia A by restoring a genotype in which mutation has occurred to a wild type-like state, without limitation via normal gene or protein delivery.

Abstract: Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive layer including a terminal pad on the interlayer insulating layer. The first capacitor structure includes at least one first laminate, the at least one first laminate including a first lower electrode, a first capacitor insulating layer, and a first upper electrode sequentially on the substrate. The terminal pad does not overlap with the first capacitor structure.

Abstract: Semiconductor devices may include an internal circuit, a sealing region surrounding the internal circuit, and a decoupling capacitor region in the sealing region. The decoupling capacitor region may include decoupling capacitors. Each of the decoupling capacitors may include a first capacitor metal wiring pattern connected to a high power supply line, a second capacitor metal wiring pattern spaced apart from the first capacitor metal wiring pattern and connected to a low power supply line, and a dielectric pattern between the first capacitor metal wiring pattern and the second capacitor metal wiring pattern.

Abstract: The present invention provides a method for inducing an inversion of normal blood coagulation factor VIII (F8) gene, a method for correcting an inversion of blood coagulation factor VIII gene in which the inversion has occurred, and a Hemophilia A patient-derived induced pluripotent stem cell in which the inversion is corrected, constructed using the same. The method of the present invention effectively reproduces the inversion of intron 1 and intron 22 of the F8 gene, which is responsible for the majority of severe hemophilia A, and thereby may be effectively used for studying the development mechanism of hemophilia A and as a research tool for screening therapeutic agents. The inversion-corrected induced pluripotent stem cell constructed according the method of the present invention enables an efficient and fundamental treatment for hemophilia A by restoring a genotype in which mutation has occurred to a wild type-like state, without limitation via normal gene or protein delivery.

Abstract: The present invention provides a method for inducing an inversion of normal blood coagulation factor VIII (F8) gene, a method for correcting an inversion of blood coagulation factor VIII gene in which the inversion has occurred, and a Hemophilia A patient-derived induced pluripotent stem cell in which the inversion is corrected, constructed using the same. The method of the present invention effectively reproduces the inversion of intron 1 and intron 22 of the F8 gene, which is responsible for the majority of severe hemophilia A, and thereby may be effectively used for studying the development mechanism of hemophilia A and as a research tool for screening therapeutic agents. The inversion-corrected induced pluripotent stem cell constructed according the method of the present invention enables an efficient and fundamental treatment for hemophilia A by restoring a genotype in which mutation has occurred to a wild type-like state, without limitation via normal gene or protein delivery.

Abstract: The present invention provides a method for inducing an inversion of normal blood coagulation factor VIII (F8) gene, a method for correcting an inversion of blood coagulation factor VIII gene in which the inversion has occurred, and a Hemophilia A patient-derived induced pluripotent stem cell in which the inversion is corrected, constructed using the same. The method of the present invention effectively reproduces the inversion of intron 1 and intron 22 of the F8 gene, which is responsible for the majority of severe hemophilia A, and thereby may be effectively used for studying the development mechanism of hemophilia A and as a research tool for screening therapeutic agents. The inversion-corrected induced pluripotent stem cell constructed according the method of the present invention enables an efficient and fundamental treatment for hemophilia A by restoring a genotype in which mutation has occurred to a wild type-like state, without limitation via normal gene or protein delivery.

Abstract: A semiconductor device may include a substrate, a plurality of first contact plugs, a first via and a power rail. The substrate may include first and second cell regions and a power rail region. The first and second cell regions may be disposed in a second direction, and the power rail region may be disposed between the first and second regions. The plurality of first contact plugs may be formed on the power rail region of the substrate, and may be spaced apart from each other by a first distance in a first direction crossing the second direction. The first via may commonly contact top surfaces of the first contact plugs. The power rail may be formed on the first via. The power rail may provide a voltage for the first and second cell regions through the first via and the first contact plugs.

Abstract: Semiconductor devices may include an internal circuit, a sealing region surrounding the internal circuit, and a decoupling capacitor region in the sealing region. The decoupling capacitor region may include decoupling capacitors. Each of the decoupling capacitors may include a first capacitor metal wiring pattern connected to a high power supply line, a second capacitor metal wiring pattern spaced apart from the first capacitor metal wiring pattern and connected to a low power supply line, and a dielectric pattern between the first capacitor metal wiring pattern and the second capacitor metal wiring pattern.

Abstract: E-fuse devices, and a method of manufacturing the same, include a first metal pattern extending in a first direction to connect a first electrode and a second electrode to each other, a first barrier metal contacting lateral surfaces and a bottom surface of the first metal pattern, and a first capping insulation layer contacting a top surface of the first metal pattern, wherein the first metal pattern includes an exposed region, the first barrier metal or the first capping insulation layer not contacting a top surface or a bottom surface of the exposed region.

Abstract: Semiconductor devices include an interlayer insulating layer on a substrate, a first capacitor structure in the interlayer insulating layer, and a conductive layer including a terminal pad on the interlayer insulating layer. The first capacitor structure includes at least one first laminate, the at least one first laminate including a first lower electrode, a first capacitor insulating layer, and a first upper electrode sequentially on the substrate. The terminal pad does not overlap with the first capacitor structure.

Abstract: This invention relates to use of inhibitors of the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4) in treating, preventing, or reducing fibrosis, cancer, and vascular injuries.

Abstract: This invention relates to 2-pyridyl substituted imidazoles which are inhibitors of the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4), methods for their preparation, and their use in medicine, specifically in the treatment and prevention of a disease state mediated by these receptors.

Abstract: This invention relates to use of inhibitors of the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4) in treating, preventing, or reducing fibrosis, cancer, and vascular injuries.

Abstract: This invention relates to 2-pyridyl substituted imidazoles which are inhibitors of the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4), methods for their preparation, and their use in medicine, specifically in the treatment and prevention of a disease state mediated by these receptors.

Abstract: This invention relates to 2-pyridyl substituted imidazoles which are inhibitors of the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4), methods for their preparation, and their use in medicine, specifically in the treatment and prevention of a disease state mediated by these receptors.

Abstract: This invention relates to use of inhibitors of the transforming growth factor-? (TGF-?) type I receptor (ALK5) and/or the activin type I receptor (ALK4) in treating, preventing, or reducing fibrosis, cancer, and vascular injuries.