Abstract: Embodiments provide an ink composition, a layer manufactured using the ink composition, an electrophoresis device including the layer, and a display device including the layer. The ink composition includes a semiconductor nanorod, and a solvent that satisfies Equation 1: |?1??2|/?1*100?10??[Equation 1] In Equation 1, ?1 is a dielectric constant of the solvent at 50 Hz, and ?2 is a dielectric constant of the solvent at 50 kHz.

Abstract: A method for fabrication of semiconductor device in which a tungsten film only exists on contact hole which is comprising the steps of depositing a insulator layer on the silicon substrate being doped by impurity, depositing a photoresist high temperature resistant resin on the insulator layer in order to form a contact hole, forming a contact hole by etching the insulator layer using the photoresist resin as a mask, selectively depositing tungsten film on the contact hole and removing the photoresist layer, and a method for fabrication of semiconductor device which is comprising the steps of depositing the first photoresist resin layer followed by depositing the second photoresist resin layer on the insulator layer forming a pattern to the first and the second photoresist resin layer, forming a contact hole by etching the insulator layer, selectively depositing tungsten film on the contact hole after removing the second photoresist resin layer and removing the first photoresist resin layer.