Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: The present inventive concept provides a solar cell, including: a semiconductor substrate; a first semiconductor layer provided on one surface of the semiconductor substrate; a second semiconductor layer provided on one surface of the first semiconductor layer; a third semiconductor layer provided on one surface of the second semiconductor layer; a first transparent conductive layer provided on one surface of the third semiconductor layer; and a first electrode provided on one surface of the first transparent conductive layer, wherein the second semiconductor layer includes a p-type semiconductor layer, and the third semiconductor layer includes a p+-type semiconductor layer including W, and a method of manufacturing the solar cell.

Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

Abstract: Provided are a device and a method for monitoring substrates to determine a processed state of the substrates and inspecting presence of abnormality in the processed substrates. A device for inspecting substrates includes a substrate mounting part moving relative to the substrate and for mounting a substrate, a measurement part for monitoring the substrate, a control part configured to control a movement path of the measurement part so that at least some regions are monitored from positions different from each other with respect to a plurality of substrates, and an analysis part configured to determine presence of abnormality from monitoring information about the plurality of substrates.

Abstract: A substrate processing apparatus includes a chamber having a sidewall; a susceptor mounting a substrate inside the chamber, an upper dome covering an upper surface of the chamber and formed of a transparent dielectric material, and an antenna disposed on the upper dome to generate inductively coupled plasma. The antenna includes two one-turn unit antennas, the wo one-turn unit antennas each has an upper surface and a lower surface and are disposed to overlap each other on the upper surfaces and the lower surfaces of the two one-turn unit antennas, the two one-turn unit antennas are connected in parallel and are connected to a radio-frequency (RF) power supply, and a width direction of each of the one-turn unit antennas stands upright vertically.

Abstract: Provided are a device and a method for monitoring substrates to determine a processed state of the substrates and inspecting presence of abnormality in the processed substrates. A device for inspecting substrates includes a substrate mounting part moving relative to the substrate and for mounting a substrate, a measurement part for monitoring the substrate, a control part configured to control a movement path of the measurement part so that at least some regions are monitored from positions different from each other with respect to a plurality of substrates, and an analysis part configured to determine presence of abnormality from monitoring information about the plurality of substrates.

Abstract: The present inventive concept is a substrate processing method in which processing steps are carried out on a substrate supported on a support unit in a processing space that is divided into a first processing area and a second processing area, the substrate processing method comprising: a step in which a first gas and a first purge gas are sprayed in the first processing area; and a step in which a second purge gas and a second gas are sequentially sprayed in the second processing area.

Abstract: The present inventive concept relates to a gas distribution apparatus of a substrate processing apparatus including: a first gas distribution module distributing a processing gas to a first gas distribution space; and a second gas distribution module distributing a processing gas to a second gas distribution space which differs from the first gas distribution space, a substrate processing apparatus, and a substrate processing method.

Abstract: The device for processing a substrate according to an embodiment of the present disclosure includes a chamber, a substrate supporting unit which is provided inside the chamber and supports a substrate provided inside the chamber, a gas distribution unit which is provided inside the chamber to face the substrate supporting unit and distributes a process gas toward the substrate supporting unit, a first temperature control unit which is installed in a central region of the gas distribution unit and increases a temperature of the central region, and a second temperature control unit which is installed in an edge region of the gas distribution unit and increases a temperature of the edge region more rapidly than the temperature of the central region.

Abstract: The present inventive concept relates to a substrate processing apparatus comprising: a chamber; a substrate support part which supports one or more substrates in the chamber; an upper electrode which is disposed above and arranged opposite to the substrate support part; and a lower electrode which is disposed below and spaced apart from the upper electrode, wherein the lower electrode includes a first electrode to which first RF power having a first frequency is applied and a second electrode to which second RF power having a second frequency different from the first frequency is applied.

Abstract: The present disclosure relates to a substrate processing method and apparatus which can supply gas to a plurality of process chamber through one gas supply unit, and supply different gases at the same time, thereby improving the uniformity of the thicknesses of thin films deposited in the respective chambers. The substrate processing method and apparatus can perform a process in only one chamber by supplying gas to only the chamber at the same time or perform different processes in the plurality of chambers by supplying different gases to the respective chambers. Therefore, films having uniform thicknesses can be deposited in the respective chambers, and the gas supply efficiency can be improved.

Abstract: The present disclosure relates to a substrate transfer method and apparatus which controls a substrate transfer robot using position information of a substrate, when the substrate is loaded or unloaded in the substrate transfer apparatus including the substrate transfer robot. When an operation of setting a new reference value due to a change in process or hardware after setting the initial reference value for loading or unloading the substrate is requested, the substrate transfer method and apparatus can automatically perform the reference value setting operation. Therefore, the substrate transfer method and apparatus can transfer the substrate such that the substrate is located in the center of the susceptor, even though the reference value of the substrate transfer robot is not manually changed.

Abstract: An embodiment of a substrate placing part relates to a substrate placing part that is arranged in a substrate processing apparatus. The substrate placing part is divided into a plurality of inner sections that have an inner heating wire and an outer heating wire; and an outer section that is arranged in an edge thereof, that surrounds the inner sections, and that includes the outer heating wire, wherein the inner heating wire is disposed in the same inner section and has a first gap in at least a partial section thereof, the respective inner heating wires disposed in the different inner sections are disposed to have a second gap in a part in which the inner heating wires are parallel to one another, the inner heating wire and the outer heating wire are disposed to have a third gap in a part in which the inner heating wire and the outer heating wire are parallel to one another, and the first gap may be smaller than the second gap.

Abstract: A gas introduction apparatus according to an embodiment of the present disclosure includes a gas feeding block disposed above a chamber, the gas feeding block comprising a plurality of gas channels disposed therein to supply a gas to the chamber, a valve assembly coupled to one side surface of the gas feeding block, the valve assembly comprising a plurality of valves for selectively opening/closing at least one of the plurality of gas channels, and a gas introduction pipe coupled, at one end thereof, to the valve assembly while communicating with the chamber at the other end thereof. A buffer space is provided at least one of the plurality of gas channels such that the buffer space is disposed adjacent to the gas introduction pipe, to accumulate the gas.

Abstract: One embodiment of a substrate supporting apparatus comprises: a support member for supporting a substrate; and a temperature compensating member disposed at the edge of the support member, and compensating the temperature of the substrate, wherein the support member may be made of a light-transmissive material, the temperature compensating member may be made of an opaque material, and the surface of the temperature compensating member may be made of a material having corrosion resistance against a cleaning gas.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: Disclosed is a substrate processing apparatus and the method of processing an exhaust gas. The substrate processing apparatus and the method of processing an exhaust gas according to the present invention, an exhaust gas decomposition module may decompose a source gas exhausted from a process chamber to decompose a ligand of the source gas. Also, the ligand and the source gas of which the ligand has been decomposed may be put in a stabilized state by reacting with separately supplied O2, N2O, or O3, and then, may be changed to a mixed gas including a reactant gas mixed therewith. Subsequently, the mixed gas may flow into the exhaust pump and may be emitted. Alternatively, the ligand and the source gas may be mixed with the reactant gas and may be emitted.

Abstract: The present disclosure relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.

Abstract: The disclosure relates to a thin film forming device and a thin film forming method using the same capable of improving the film quality of a silicon thin film by dividing a reaction space in a process chamber of the thin film forming device and thereby forming the silicon thin film on a substrate in a first space and treating a surface of the silicon thin film, formed in the first space, in a second space by using plasma. By the thin film forming device and the thin film forming method using the same according to the disclosure, with a trend that a pattern is complicated and the depth of the pattern increases, impurities in a thin film may be more efficiently removed, a uniform thin film may be formed on a pattern, and the grain size of the crystals of a silicon thin film may be made uniform.