Patents by Inventor Chull Won Bang

Chull Won Bang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6878630
    Abstract: A method of manufacturing a wafer. The surface of a wafer for which a lapping process is completed is exposed to a caustic etch process so that the etch rate against the surface of the wafer ranges from about 0.3 to about 0.7 ?m/min using an etchant containing from about 42 to about 48% KOH and from about 52 to about 58% H2O. Then, a wafer back side polishing process is controlled in order to prevent a sliding phenomenon without a drop in a chucking voltage. Therefore, a lift-off or peeling phenomenon of a subsequently deposited film is reduced and local variations in the etch rate is also reduced.
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: April 12, 2005
    Assignee: Hynix Semiconductor Inc.
    Inventors: Chull Won Bang, In Cheol Kim, Dong Won Back
  • Publication number: 20030068891
    Abstract: A method of manufacturing a wafer. The surface of a wafer for which a lapping process is completed is exposed to a caustic etch process so that the etch rate against the surface of the wafer ranges from about 0.3 to about 0.7 &mgr;m/min using an etchant containing from about 42 to about 48% KOH and from about 52 to about 58% H2O. Then, a wafer back side polishing process is controlled in order to prevent a sliding phenomenon without a drop in a chucking voltage. Therefore, a lift-off or peeling phenomenon of a subsequently deposited film is reduced and local variations in the etch rate is also reduced.
    Type: Application
    Filed: September 10, 2002
    Publication date: April 10, 2003
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Chull Won Bang, In Cheol Kim, Dong Won Back