Patents by Inventor Chulseung Lim

Chulseung Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory systems for performing failover
    Patent number: 11231992
    Abstract: A memory system includes a plurality of memory devices, each of the plurality of memory devices including a plurality of memory cells, and at least one of the plurality of memory devices including a backup region, and a memory controller configured to store data to be stored in a plurality of selected memory cells in the plurality of selected memory cells and the backup region, the plurality of selected memory cells being connected to a selected word line of a selected memory device among the plurality of memory devices, and replace the selected word line with a redundancy word line to which a plurality of redundancy memory cells among the plurality of memory cells are connected in response to a correctable error correction code (CECC) occurring in at least one of the plurality of selected memory cells.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: January 25, 2022
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Inhoon Park, Dong Kim, Hyunglae Eun, Chulseung Lim, Wonyeoung Jung
  • MEMORY SYSTEMS FOR PERFORMING FAILOVER
    Publication number: 20210026732
    Abstract: A memory system includes a plurality of memory devices, each of the plurality of memory devices including a plurality of memory cells, and at least one of the plurality of memory devices including a backup region, and a memory controller configured to store data to be stored in a plurality of selected memory cells in the plurality of selected memory cells and the backup region, the plurality of selected memory cells being connected to a selected word line of a selected memory device among the plurality of memory devices, and replace the selected word line with a redundancy word line to which a plurality of redundancy memory cells among the plurality of memory cells are connected in response to a correctable error correction code (CECC) occurring in at least one of the plurality of selected memory cells.
    Type: Application
    Filed: February 18, 2020
    Publication date: January 28, 2021
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Inhoon PARK, Dong Kim, Hyunglae Eun, Chulseung Lim, Wonyeoung Jung