Abstract: Provided is a plasma generating apparatus using a dual plasma source and a substrate treating apparatus including the same. A plasma generating apparatus may include: an RF power source supplying an RF signal; a plasma chamber providing a space for generating plasma; a first plasma source disposed on a portion of the plasma chamber to generate plasma; and a second plasma source disposed on another portion of the plasma chamber to generate plasma wherein the second source comprises a plurality of gas supply loops disposed along a circumference of the plasma chamber and supplied with a process gas therein to supply the process gas to the plasma chamber; and a plurality of electromagnetic field applicators coupled to the gas supply loop and receiving the RF signal to generate plasma from the process gas.