Abstract: Systems and methods reduce likelihood of hysteresis that reduces perceived image quality of a subsequent image frame by toggling the display pixels to relax the display pixels by overwriting previous image frame data. During non-emission periods of the pixels, the pixels may be pre-toggled or exercised to improve response time and accuracy of the pixel. Data for pixels being programmed may also be used to pre-toggle other pixels reducing overhead but increasing cross-talk. Since the amount of cross-talk is related to content of the pixels being pre-toggled, a line buffer may be used to store image data for the pixels being pre-toggled. This stored image data may be used to determine how much pre-compensation is to be applied to data for the pixels being programmed. In other words, an amount of compensation applied is based at least in part on the content (e.g., greyscale levels) of the image data.

Abstract: Systems and methods reduce likelihood of hysteresis that reduces perceived image quality of a subsequent image frame by toggling the display pixels to relax the display pixels by overwriting previous image frame data. During non-emission periods of the pixels, the pixels may be pre-toggled or exercised to improve response time and accuracy of the pixel. Data for pixels being programmed may also be used to pre-toggle other pixels reducing overhead but increasing cross-talk. Since the amount of cross-talk is related to content of the pixels being pre-toggled, a line buffer may be used to store image data for the pixels being pre-toggled. This stored image data may be used to determine how much pre-compensation is to be applied to data for the pixels being programmed. In other words, an amount of compensation applied is based at least in part on the content (e.g., greyscale levels) of the image data.

Abstract: An active pixel sensor includes thin-film transistors (TFTs) fabricated on a glass substrate, the TFTs include a gate electrode patterned on the glass substrate; a gate insulator layer disposed over the gate electrode; an amorphous indium-tin-zinc-oxide (a-ITZO) active semi-conductor layer disposed on the gate insulator layer and patterned over the gate electrode; and a source electrode and a drain electrode patterned from a metal layer deposited over the a-ITZO layer.