Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.

Abstract: Provided are an LCP film and a laminate comprising the same. The LCP film is made of an LCP resin comprising a structural unit represented by Formula (1): -L1-Ar-L2- (1), wherein -L1- and -L2- are respectively —O— or —CO—; —Ar— is an arylene group. Formula (1) comprises structural units Based on a total molar number of the structural unit represented by Formula (1), a molar number of the structural unit represented by Formula (I) is in the range from 15 mole % to mole %, and a sum of molar numbers of the structural units represented by Formulae (I) and (II) is in the range from 80 mole % to 100 mole %. The LCP film has a thickness and a transmittance, wherein when values of the thickness (in ?m) and the transmittance are put into Formula (III), the obtained value is from 0.055 to 0.090. Formula (III): Log(1/TT %)/(Thickness)0.5.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: A semiconductor device includes one or more active semiconductor components, wherein a front side is defined over the semiconductor substrate and a back side is defined beneath the semiconductor substrate. A front side power rail is formed at the front side of the semiconductor device and is configured to receive a first reference power voltage. First and second back side power rails are formed on the back side of the semiconductor substrate and are configured to receive corresponding second and third reference power voltages. The first, second and third reference power voltages are different from each other.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: An electronic device includes a substrate, a first silicon transistor, a second silicon transistor and a first oxide semiconductor transistor. The first silicon transistor, the second silicon transistor and the first oxide semiconductor transistor are disposed on the substrate. The first silicon transistor has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second silicon transistor has a first terminal electrically connected to the second terminal of the first silicon transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first silicon transistor. The first oxide semiconductor transistor has a first terminal electrically connected to the first terminal of the second silicon transistor. Wherein, a voltage value of the first voltage level is greater than a voltage value of the second voltage level.

Abstract: A method of moving a susceptor in a processing system, suitable for use in semiconductor processing, is provided. The method includes: moving a first susceptor from an interior volume of a first enclosure to an interior volume of a process chamber during a first time period; and positioning, during a second time period, a first substrate on the first susceptor when the first susceptor is in the process chamber, wherein the interior volume of the first enclosure and interior volume of the process chamber are maintained at a non-atmospheric pressure from the beginning of the first time period until the end of the second time period.

Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.

Abstract: The present disclosure provides intelligent radio frequency interference mitigation in a computing platform. The computing platform includes a processor, a memory, a system clock and a wireless network interface. The system clock can be controlled so that the processor and/or the memory may operate at a slow frequency or a fast frequency. The wireless network may operate on a radio channel that experiences radio frequency interference at the fast frequency. The system clock may be intelligently controlled to select the slow frequency to reduce radio frequency interference to prioritize execution of a network application, or to select the fast frequency to increase processor speed and prioritize execution of a local application.

Abstract: A computer-implemented method according to one embodiment includes running an initial network on a plurality of images to detect actors pictured therein and body joints of the detected actors. The method further includes running fully-connected networks in parallel, one fully-connected network for each of the detected actors, to reconstruct complete three-dimensional poses of the actors. Sequential model fitting is performed on the plurality of images. The sequential model fitting is based on results of running the initial network and the fully-connected networks. The method further includes determining, based on the sequential model fitting, a locational position for a camera in which the camera has a view of a possible point of collision of two or more of the actors. The camera is instructed to be positioned in the locational position.

Abstract: Example methods are provided to improve placement of an adaptor (210,220) to a mobile computing device (100) to measure a test strip (221) coupled to the adaptor (220) with a camera (104) and a screen (108) on a face of the mobile computing device (100). The method may include displaying a light area on a first portion of the screen (108). The first portion may be adjacent to the camera (104). The light area and the camera (104) may be aligned with a key area of the test strip (221) so that the camera (104) is configured to capture an image of the key area. The method may further include providing first guiding information for a user to place the adaptor (210,220) to the mobile computing device (100) according to a position of the light area on the screen (108).

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: A semiconductor device, includes a first metal layer, a second metal layer, a drain/source contact and at least one conductive via. The first metal layer has a first conductor that extends in a first direction and a second conductor that extends in the first direction, wherein the second conductor is directly adjacent to the first conductor. The second metal layer has a third conductor that extends in a second direction, wherein the second direction is transverse to the first direction. The drain/source contact extends in the second direction and is connected to the second conductor. The at least one conductive via connects the first conductor and the second conductor through the third conductor.

Abstract: A method is provided. The method includes determining a first bump map indicative of a first set of positions of bumps. The method includes determining, based upon the first bump map, a first plurality of bump densities associated with a plurality of regions of the first bump map. The method includes smoothing the first plurality of bump densities to determine a second plurality of bump densities associated with the plurality of regions of the first bump map. The method includes determining, based upon the second plurality of bump densities, a second bump map indicative of the first set of positions of the bumps and a set of sizes of the bumps.

Abstract: A display device and a signal source switching method therefore are provided. The display device is connected with a first signal source device and a second signal source device and includes a switching circuit, a receiver circuit and a control circuit. The switching circuit includes a first connection port and a second connection port, which are respectively connected to the first signal source device and the second signal source device. When the control circuit receives a signal source switching command, the control circuit records a current operating state of each of the first signal source device and the second signal source device. When the control circuit receives an active source command from the first signal source device, the control circuit refers to the current operating state to control the switching circuit to switch the image signal source to the first signal source device or the second signal source device.

Abstract: An integrated circuit includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail extending in a first direction. A first distance between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance between the long edge of the second power rail and the first alignment boundary of the second-type active zone. Each of the first distance and the second distance is along a second direction which is perpendicular to the first direction.

Abstract: An image sensor structure includes a semiconductor substrate, a plurality of image sensing elements, a reflective element, and a high-k dielectric structure. The image sensing elements are in the semiconductor substrate. The reflective element is in the semiconductor substrate and between the image sensing elements. The high-k dielectric structure is between the reflective element and the image sensing elements.