Abstract: An apparatus (e.g., an access point (AP) or a non-AP station (STA)) detects a non-primary subband of an operating bandwidth comprising a primary subband and the non-primary subband to be idle. The apparatus controls a transmit power in performing transmission on at least the non-primary subband.

Abstract: A quantum dot composite structure and a method for forming the same are provided. The quantum dot composite structure includes: a glass particle including a glass matrix and a plurality of quantum dots located in the glass matrix, wherein at least one of the plurality of quantum dots includes an exposed surface in the glass matrix; and an inorganic protective layer disposed on the glass particle and covering the exposed surface.

Abstract: An atomization module includes a main fixing member, an auxiliary fixing member, an atomization component and a piezoelectric component. The main fixing member includes a first bonding part, a second bonding part and a connecting part. The first bonding part has a first opening and a first bonding surface surrounding the first opening. The second bonding part is connected to the first bonding part, and the connecting part and the second bonding part surround the first bonding part. The auxiliary fixing member has a second opening and a second bonding surface surrounding the second opening. The piezoelectric component surrounds the first bonding part. The main fixing member has a first adhesive groove, which is jointly defined at least by the main fixing member, the auxiliary fixing member and the atomization component. The first adhesive is provided in the first adhesive groove.

Abstract: A semiconductor device structure includes a first dielectric wall, a plurality of first semiconductor layers vertically stacked and extending outwardly from a first side of the first dielectric wall, each first semiconductor layer has a first width, a plurality of second semiconductor layers vertically stacked and extending outwardly from a second side of the first dielectric wall, each second semiconductor layer has a second width, a plurality of third semiconductor layers disposed adjacent the second side of the first dielectric wall, each third semiconductor layer has a third width greater than the second width, a first gate electrode layer surrounding at least three surfaces of each of the first semiconductor layers, the first gate electrode layer having a first conductivity type, and a second gate electrode layer surrounding at least three surfaces of each of the second semiconductor layers, the second gate electrode layer having a second conductivity type opposite the first conductivity type.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a semiconductor layer disposed over a substrate, and the semiconductor layer has a first end and a second end opposite the first end. The structure further includes an epitaxial feature disposed over the substrate, and the epitaxial feature is electrically connected to the first end of the semiconductor layer. The structure further includes a first dielectric layer disposed over the substrate, and the first dielectric layer is in contact with the second end of the semiconductor layer. The structure further includes a contact etch stop layer disposed on and in contact with the first dielectric layer and an interlayer dielectric layer disposed on and in contact with the contact etch stop layer.

Abstract: A method for determining a standard depth value of a marker includes obtaining a maximum depth value of the marker. A reference depth value of the marker is obtained based on a depth image of the marker, and a Z-axis coordinate value of the marker is obtained based on a color image of the marker. When the reference depth value and the Z-axis coordinate value are both less than the maximum depth value, and a difference between the reference depth value and the Z-axis coordinate value is not greater than 0, the depth reference value is set as the standard depth value of the marker; and when the difference is greater than 0, the Z-axis coordinate value is set as the standard depth value of the marker.

Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.

Abstract: An integrated circuit package including electrically floating metal lines and a method of forming are provided. The integrated circuit package may include integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure on the encapsulant, a first electrically floating metal line disposed on the redistribution structure, a first electrical component connected to the redistribution structure, and an underfill between the first electrical component and the redistribution structure. A first opening in the underfill may expose a top surface of the first electrically floating metal line.

Abstract: A keyswitch structure includes a casing, a first support, a second support, and a pressing stem. The casing forms an accommodating space and an opening communicating with the accommodating space. The first and second supports are disposed in the accommodating space and are directly and rotatably connected with the casing; the supports are also pivotally connected with each other. The pressing stem extends into the accommodating space to be rotatably connected with the first and second supports and protrudes from the casing through the opening. The pressing stem is movable parallel to a vertical direction relative to the casing through the first and second supports. A motion of the pressing stem in the vertical direction has a top dead center and a bottom dead center. When the pressing stem is at the top dead center and the bottom dead center, it does not touch the casing in the vertical direction.

Abstract: The present disclosure relates to systems and methods for real and virtual object interactions in augmented reality environments are disclosed. The system comprises areal object detection module to receive multiple image pixels and the corresponding depths of at least one initiative object, a real object recognition module to determine a shape, a position, and a movement of the initiative object; a virtual object display module to display a virtual target object, a collision module to determine whether the at least one initiative object collides into a virtual target object and, an interaction module for determining an action responding to an event based on at least one of an object recognition determination from the real object recognition module, a collision determination from the collision module, and a type of the virtual target object.

Abstract: A computer implemented method for managing the scope of permissions granted by users to application that includes collecting a set of permissions for an application from an application provider publication; and collecting a process flow for functional steps of the application from a review of the application that is published on a product review type publication. The computer implemented method further includes dividing the functional steps of the application into a plurality of journeys, each of said plurality of journeys having a function associated with a stage of a functional step from a perspective of a user; and matching permissions from the set of permissions for each journey of said plurality of journeys to provide matched permissible permissions to journeys stored in a customer journey store.

Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.

Abstract: A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

Abstract: A method of making a semiconductor device includes forming a circuit layer over a substrate. The method further includes depositing an insulator over the substrate. The method further includes patterning the insulator to define a test line trench, a first trench, and a second trench, wherein the first trench is on a portion of the substrate exposed by the circuit layer. The method further includes filling the test line trench to define a test line electrically connected to the circuit layer. The method further includes filling the first trench and the second trench to define a capacitor.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A keyswitch structure includes a keycap support mechanism and a keycap that is supported by the keycap support mechanism in a vertical direction. The keycap support mechanism includes a base and two supports. The base has two sliding slots. Each sliding slot has an opening in a horizontal direction and an obstruction block at the opening. The horizontal direction is perpendicular to the vertical direction. Each support has a sliding portion and a linkage portion. The sliding portions slide parallel to the horizontal direction in the sliding slots correspondingly. The obstruction block prevents the corresponding sliding portion from disengaging from the corresponding sliding slot. The two linkage portions push against each other in line contact, so that the two supports are mutually driven through the two linkage portions.

Abstract: A heat dissipation unit includes a main body having a first and a second plate member, which are closed to each other to together define an airtight chamber in between them. A working fluid is filled in the airtight chamber. A first wick structure layer and a holding-down member are provided between the first and the second plate member and received in the airtight chamber. The holding-down member is located above the first wick structure layer, such that the first wick structure layer is held down by the holding-down member to be closely and flatly attached to the second plate member without warping.

Abstract: Carbon fiber and method of forming the same are provided. The method modifies proportion of a finishing oil to control a relation between a surface tension and a particle size of the finishing oil, and thus penetration of the finishing oil into an interior of the carbon fiber is avoided. Therefore, the carbon fiber can have both low oil residues and a high strength.

Abstract: A drink container and a lid assembly thereof are provided. The drink container includes a container body and the lid assembly, the lid assembly includes a first lid and a second lid, the first lid is screwed at an opening end of the container body through screw threads, the first lid has a top portion, and the top portion of the first lid has an opening portion. The second lid is disposed above the first lid, the second lid includes a plunger component, and a bottom portion of the plunger can be engaged with the opening portion and sealed with the opening portion. The plunger component is connected to a connection arm, and one side of the connection arm corresponding to the plunger component is pivotally connected to a pivot portion of the first lid. The plunger component has a second accommodating space configured to accommodate a straw.

Abstract: An optical keyswitch includes a keycap, a support mechanism, and a switch module. The support mechanism is disposed below the keycap and configured to support the keycap moving upward and downward, the support mechanism comprising a first frame and a second frame, the first frame having a sliding end. The switch module includes a circuit board, an emitter, and a receiver, the emitter and the receiver are electrically connected to the circuit board, and the emitter emitting an optical signal to the receiver. When the keycap is pressed, the first frame is driven by the keycap to slide substantially parallel to the circuit board and block the optical signal with the sliding end, so the switch module is triggered to generate a triggering signal.