Abstract: A display controller includes a first chip and a second chip. The first chip is configured to control a display device. The second chip is externally coupled to the first chip, and configured to be a random access memory and. The first chip is further configured to provide a first supply power to the second chip and to access the second chip during the controlling of the display device.

Abstract: A signal driver may include a variable termination resistor and a signal transmission line. The variable termination resistor may include one or more variable termination resistor units. Each of the one or more variable termination resistor units may include a switch connected to a first end node of the variable termination resistor; a T-coil connected to the switch; a first resistor connected to the first end node of the variable termination resistor and to the T-coil; and a second resistor connected to a second end node of the variable termination resistor and to the T-coil. The signal transmission line may be connected to the second end node of the variable termination resistor.

Abstract: Techniques for storage management involve determining a plurality of storage units to be reconstructed on a group of disks, the plurality of storage units being distributed on different disks in the group of disks. Such techniques further involve selecting, based on the distribution of the plurality of storage units on the group of disks, a group of storage units from the plurality of storage units so that different storage units in the group of storage units are distributed on different disks. Such techniques further involve performing concurrent reconstruction on the group of storage units.

Abstract: An interface of a memory circuit includes a chip enable terminal, at least one data terminal, and a data strobe terminal. The chip enable terminal receives a chip enable signal that varies between a first high voltage and a low voltage. The at least one data terminal receives a first data signal that varies between a second high voltage and the low voltage during a command phase, and transmits or receives a second data signal during a data phase. The data strobe terminal receives a first data strobe signal that periodically varies between the second high voltage and the low voltage during the command phase, and transmits or receives a second data strobe signal that swings periodically during the data phase. During a transition interval between the command phase and the data phase, the data strobe terminal stops receiving or transmitting data strobe signals that swing periodically.

Abstract: A signal driver may include a plurality of distributed drivers along a differential transmission line. Each of the plurality of the distributed drivers may include: an output tap configured to receive a portion of an incoming signal of the signal driver; and a T-coil connected to an output node of the output tap. The differential transmission line is connected to and intercepted by a first terminal and a second terminal of the T-coil, and a plurality of T-coils of the plurality of the distributed drivers are distributed along and spaced apart on the differential transmission line.

Abstract: The present disclosure provides a battery piece feeding device and a soldering stringer, the battery piece feeding device is configured to lay battery pieces onto a soldering conveying device, the battery piece feeding device includes two picking mechanisms, both of the picking mechanisms are configured to alternately pick up the battery pieces from a battery piece picking position and lay the picked battery pieces onto the soldering conveying device. When one picking mechanism picks up the battery piece from the battery piece picking position, the other picking mechanism lays the picked battery piece onto the soldering conveying device. By arranging the two picking mechanisms and controlling the two picking mechanisms to alternately pick up the battery pieces from the battery piece picking position and lay the picked battery pieces onto the soldering conveying device, the battery piece feeding device greatly improves the battery piece feeding efficiency.

Abstract: An etching method for selectively etching a silicon oxide film on a wafer surface that includes the silicon oxide film and a silicon nitride film includes: a surface layer removal process including: etching the silicon oxide film at a first etching rate and removing a surface modification layer covering on the silicon nitride film; and an etching process including: etching the silicon oxide film at a second etching rate. The first etching rate is smaller than the second etching rate.

Abstract: A compound is disclosed that has a metal coordination complex structure having at least two ligands coordinated to the metal; wherein the compound has a first substituent R1 at one of the ligands' periphery; wherein a first distance is defined as the distance between the metal and one of the atoms in R1 where that atom is the farthest away from the metal among the atoms in R1; wherein the first distance is also longer than any other atom-to-metal distance between the metal and any other atoms in the compound; and wherein when a sphere having a radius r is defined whose center is at the metal and the radius r is the smallest radius that will allow the sphere to enclose all atoms in the compound that are not part of R1, the first distance is longer than the radius r by at least 2.9 ?.

Abstract: Fluorine substituted metal complexes as efficient phosphorescent emitters is disclosed. The fluorine substitution is at para position of a phenyl group.

Abstract: The disclosure provides a kit for detecting microsatellite instability and a method therefor. The kit includes a negative control, a plurality of qPCR reaction solutions, a qPCR premix and a sterile enzyme-free water; the plurality of qPCR reaction solutions includes 6 pairs of upstream primers and downstream primers of which the MSI mutation site is amplified, and a reference probe for the internal reference and a detection probe for the mutation site. The difference between the amplification of the gene and the gene at the mutation site of the samples and the negative control is used to detect the microsatellite instability. The method and kit as provided is easy and simple without the need of normal tissues being a control, and the need to open the cap. By doing so, aerosol pollution is avoided and sample supplies are conserved.

Abstract: Certain aspects relate to percutaneous sheaths for medical procedures as well as to related systems and methods. For example, a system for performing a percutaneous assisted medical procedure can include a percutaneous sheath. The percutaneous sheath can include a first conduit for providing aspiration into the kidney and a second conduit for passing a catheter into the kidney. The system can also include an aspiration catheter configured to be inserted into the kidney through the second conduit of the percutaneous sheath. A fluidics system can include an irrigation source comprising a pump and an aspiration source comprising a vacuum. The irrigation source can be connected to a fluid inlet of the percutaneous sheath that is connected to the first conduit. The aspiration source can be connected to the aspiration catheter.

Abstract: It is demonstrated herein that inhibitors of immune checkpoints and CHI3L1 are synergistic. Accordingly, described herein are methods and compositions relating to combinatorial therapies for cancer, e.g., comprising an inhibitor of CHI3L1; and an inhibitor of an immune checkpoint protein. In some embodiments, the CHI3L1 inhibitor can be an antibody or antibody reagent as described herein.

Abstract: A card riser for an information handling system includes a bottom surface, multiple connector slots in physical communication with the bottom surface, and a locking mechanism in physical communication with the bottom surface. Each connector slot is configured to receive a corresponding connector of a different one of multiple cards. When the locking mechanism is in an unlocked position, a different one of the cards is inserted within a different one of the connector slots. When the locking mechanism is in a locked position, the locking mechanism is placed in physical communication with each of the cards to securely hold the cards within the card riser.

Abstract: A device is manufactured by providing a semiconductor fin protruding from a major surface of a silicon substrate comprising silicon. A liner and a shallow trench isolation (STI) region are formed adjacent the semiconductor fin. A silicon cap is deposited over the semiconductor fin. The resulting cap consists of crystalline silicon in the portion over the semiconductor fin and consists of amorphous silicon in the portions over the liner and STI region. An HCl etch bake process is performed to remove the portions of amorphous silicon over the liner and the STI region.

Abstract: A housing structure includes a substrate, a first adhesive layer, and a silica gel layer. The substrate includes a first portion, and the first portion includes polybutylene terephthalate and glass fibers, the glass fibers and the polybutylene terephthalate are in a ratio between 40% and 50% by weight. The first adhesive layer is formed on the first portion. The first adhesive layer includes polysiloxane in a range of 2% to 5% by weight, acrylic resin in a range of 3% to 5% by weight, isopropanol in a range of 20% to 30% by weight, cyclohexane in a range of 20% to 30% by weight, and toluene in a range of 20% to 30% by weight. The silica gel layer is formed on the first adhesive layer, and the first adhesive layer bonds the silica gel layer to the first portion.

Abstract: A semiconductor device includes first and second semiconductor fins, a first gate structure, and a second gate structure. The first and second semiconductor fins respectively includes a first channel region and a second channel region, which the first and second gate structures are respectively on. The first gate structure includes a first silicon oxide layer on the first channel region, a first high-k dielectric layer on the first silicon oxide layer, and a first metal gate on the first high-k dielectric layer. The second gate structure includes a second silicon oxide layer on the second channel region, a second high-k dielectric layer on the second silicon oxide layer, and a second metal gate on the second high-k dielectric layer. The first silicon oxide layer has a Si4+ ion concentration greater than a Si4+ ion concentration of a bottom portion of the second silicon oxide layer.

Abstract: A method, computer program product, and computing system for determining that one non-volatile random access memory (NVRAM) drive of a pair of NVRAM drives of a storage system is offline, thus defining an offline NVRAM drive and an online NVRAM drive. A virtual disk may be generated on a plurality of solid-state disks (SSDs) of the storage system. The contents of the online NVRAM drive may be copied to the virtual disk. The virtual disk may be exposed to the storage system as a representation of the offline NVRAM drive.

Abstract: A card riser for an information handling system includes a bottom surface, multiple connector slots in physical communication with the bottom surface, and a locking mechanism in physical communication with the bottom surface. Each connector slot is configured to receive a corresponding connector of a different one of multiple cards. When the locking mechanism is in an unlocked position, a different one of the cards is inserted within a different one of the connector slots. When the locking mechanism is in a locked position, the locking mechanism is placed in physical communication with each of the cards to securely hold the cards within the card riser.

Abstract: A fastener structure comprising a connection member, a fastener and a rotation member. The connection member has an active portion having a first magnetic member, the fastener has a housing having one end thereof provided with a limit portion, and the rotation member is rotatably pivotally connected to another end of the housing. The rotation member has a fourth magnetic member, when a connection portion of the connection member is engaged with and fastened in the limit portion for fixing, the rotation member rotates and enables the fourth magnetic member to be magnetically attached and fixed to the first magnetic member.

Abstract: A semiconductor device includes first and second semiconductor fins, a first gate structure, and a second gate structure. The first and second semiconductor fins respectively includes a first channel region and a second channel region, which the first and second gate structures are respectively on. The first gate structure includes a first silicon oxide layer on the first channel region, a first high-k dielectric layer on the first silicon oxide layer, and a first metal gate on the first high-k dielectric layer. The second gate structure includes a second silicon oxide layer on the second channel region, a second high-k dielectric layer on the second silicon oxide layer, and a second metal gate on the second high-k dielectric layer. The first silicon oxide layer has a Si4+ ion concentration greater than a Si4+ ion concentration of a bottom portion of the second silicon oxide layer.