Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.

Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.

Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.

Abstract: An interposer substrate is manufactured with a scribe line between adjacent regions. In an embodiment a separate exposure reticle is utilized to pattern the scribe line. The exposure reticle to pattern the scribe line will create an exposure region which overlaps and overhangs the exposure regions utilized to form adjacent regions.

Abstract: A computer input device includes a body and a trace-detecting module coupled to the body. The body has a micro control unit (MCU), and the trace-detecting module has a light pervious area, and a trace-detecting unit. The trace-detecting unit further includes a light source and a sensor. The sensor senses a reflected light beam for a user's digit movement on the light pervious area at a velocity which can be sensed by the sensor. If an automatically scrolling mode is activated and the velocity exceeds a threshold stored in the MCU, then the MCU executes automatic scrolling at a predetermined scrolling speed.

Abstract: A method of forming a contact opening is provided. First, a substrate having a plurality of conductive structures formed thereon is provided. An ion implantation is performed. Thereafter, a thermal treatment is carried out to form a liner layer on the sidewall of the conductive structure and the exposed substrate. The liner layer on the sidewall of the conductive structure has a thickness smaller than the liner layer on the substrate surface. A spacer is formed on each side of the conductive structure and then an insulation layer is formed over the substrate. The insulation layer is patterned to form a contact opening between two neighboring conductive structures. Since the liner layer on the sidewall of the conductive structures is already quite thin, there is no need to reduce thickness through an etching operation and uniformity of the liner layer on the substrate can be ensured.

Abstract: A method of forming a contact opening is provided. First, a substrate having a plurality of conductive structures formed thereon is provided. An ion implantation is performed. Thereafter, a thermal treatment is carried out to form a liner layer on the sidewall of the conductive structure and the exposed substrate. The liner layer on the sidewall of the conductive structure has a thickness smaller than the liner layer on the substrate surface. A spacer is formed on each side of the conductive structure and then an insulation layer is formed over the substrate. The insulation layer is patterned to form a contact opening between two neighboring conductive structures. Since the liner layer on the sidewall of the conductive structures is already quite thin, there is no need to reduce thickness through an etching operation and uniformity of the liner layer on the substrate can be ensured.

Abstract: A method for manufacturing a semiconductor device includes providing a dielectric layer over a substrate, providing a first photoresist layer over the dielectric layer, patterning and defining the first photoresist layer, etching the first photoresist layer and the dielectric layer to form a plurality of vertical openings, removing the first photoresist layer, depositing a second photoresist layer over the dielectric layer, wherein the second photoresist layer fills the plurality of vertical openings, removing only a portion of the second photoresist layer deposited over the dielectric layer, wherein the second photoresist layer has a first substantially uniform thickness over the dielectric layer, depositing an anti-reflection coating layer over the second photoresist layer, providing a third photoresist layer over the anti-reflection coating layer, patterning and defining the third photoresist layer, and etching the anti-reflection coating layer and the second photoresist layer to form a plurality of trench

Abstract: A method for manufacturing a semiconductor device includes providing a dielectric layer over a substrate, providing a first photoresist layer over the dielectric layer, patterning and defining the first photoresist layer, etching the first photoresist layer and the dielectric layer to form a plurality of vertical openings, removing the first photoresist layer, depositing a second photoresist layer over the dielectric layer, wherein the second photoresist layer fills the plurality of vertical openings, removing only a portion of the second photoresist layer deposited over the dielectric layer, wherein the second photoresist layer has a first substantially uniform thickness over the dielectric layer, depositing an anti-reflection coating layer over the second photoresist layer, providing a third photoresist layer over the anti-reflection coating layer, patterning and defining the third photoresist layer, and etching the anti-reflection coating layer and the second photoresist layer to form a plurality of trench

Abstract: A method for forming contacts in a semiconductor device including a plurality of active devices formed over a substrate that includes depositing a first layer of dielectric material over the substrate and plurality of active devices, forming a first opening in the first layer of dielectric material, depositing a second layer of dielectric material over the first layer of dielectric material and in the first opening, providing a mask over the second layer of dielectric material, wherein the mask material is distinguishable over silicon oxides, and forming a second opening and a third opening in the second layer of dielectric material, wherein the second opening is aligned with the first opening and exposes a first silicide of a first active device, and the third opening exposes one of diffused regions of a second active device.