Patents by Inventor Chun-Chen Wang

Chun-Chen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260052781
    Abstract: A method of forming a field effect transistor comprises the following steps. A gate dielectric layer and a semiconductor layer are formed over a substrate in sequence. A photoresist layer is formed over the semiconductor layer. A plasma treatment is performed to the semiconductor layer to form a doped region and an undoped region laterally adjoining the doped region of the semiconductor layer using a gas. A conductive layer is formed over the doped region of the semiconductor layer and the photoresist layer. The photoresist layer is lifted off.
    Type: Application
    Filed: August 13, 2024
    Publication date: February 19, 2026
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Chen WANG, Cheng-Chen KUO, Cheng-Hsien WU, Chen-Feng HSU, Xinyu BAO
  • Patent number: D741647
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: October 27, 2015
    Inventors: Alain Boczkowski, Chun-Chen Wang
  • Patent number: D926587
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: August 3, 2021
    Inventors: Alain Boczkowski, Chun-Chen Wang