Abstract: The present disclosure provides a method for preparing a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors, the composition prepared by the method, and use of the composition for treating arthritis. The composition of the present disclosure achieves the effect of treating arthritis through various efficacy experiments.

Abstract: A method includes forming first and second semiconductor fins and a gate structure over a substrate; forming a first and second source/drain epitaxy structures over the first and second semiconductor fins; forming an interlayer dielectric (ILD) layer over the first and second source/drain epitaxy structures; etching the gate structure and the ILD layer to form a trench; performing a first surface treatment to modify surfaces of a top portion and a bottom portion of the trench to NH-terminated; performing a second surface treatment to modify the surfaces of the top portion of the trench to N-terminated, while leaving the surfaces of the bottom portion of the trench being NH-terminated; and depositing a first dielectric layer in the trench, wherein the first dielectric layer has a higher deposition rate on the surfaces of the bottom portion of the trench than on the surfaces of the bottom portion of the trench.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A memory device and a method of operating a memory device are disclosed. In one aspect, the memory device includes a plurality of non-volatile memory cells, each of the plurality of non-volatile memory cells is operatively coupled to a word line, a gate control line, and a bit line. Each of the plurality of non-volatile memory cells comprises a first transistor, a second transistor, a first diode-connected transistor, and a capacitor. The first transistor, second transistor, first diode-connected transistor are coupled in series, with the capacitor having a first terminal connected to a common node between the first diode-connected transistor and the second transistor.

Abstract: A vacuum processing apparatus (110) for deposition of a material on a substrate is provided. The vacuum processing apparatus (110) includes a vacuum chamber comprising a processing area (111); a deposition apparatus (112) within the processing area (111) of the vacuum chamber; a cooling surface (113) inside the vacuum chamber; and one or more movable shields (220) between the cooling surface (113) and the processing area (111).

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: In a method of manufacturing a semiconductor device, a metallic photoresist layer is formed over a target layer to be patterned, the metallic photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern. The metallic photo resist layer is an alloy layer of two or more metal elements, and the selective exposure changes a phase of the alloy layer.

Abstract: A method includes forming a dummy pattern over test region of a substrate; forming an interlayer dielectric (ILD) layer laterally surrounding the dummy pattern; removing the dummy pattern to form an opening; forming a dielectric layer in the opening; performing a first testing process on the dielectric layer; performing an annealing process to the dielectric layer; and performing a second testing process on the annealed dielectric layer.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: A method for fabricating nonenzymatic glucose sensor, which comprises steps of: (a) providing a bottom substrate; (b) preparing a graphene layer on the bottom substrate; (c) depositing plural amount of zinc oxide (ZnO) seed crystals on the graphene layer; (d) growing the ZnO seed crystals into columnar nanorods with hydrothermal method; (e) coating a thin film of cuprous oxide (Cu2O) on the surface of the ZnO nanorods by electrochemistry-based electrodeposition; and (f) grafting single-walled carbon nanotubes (SWCNTs) on surface of the Cu2O thin film, by using Nafion fixative composited with SWCNTs. The structure of the above sensor, therefore, comprises a bottom substrate and other components orderly assembled on it, including, from inside to outside, a graphene layer, plural amount of ZnO nanorods, a Cu2O thin film, plural amount of SWCNTs, and the Nafion fixative. Accordingly, the sensor has advantages of low cost, rapid response, and easy for preservation.

Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: A key structure is applicable to an electronic device having a housing. The key structure includes a seat, a switch, a button, and an elastic sheet. The seat is disposed in the housing and has a first through hole. The switch is disposed on the seat. A key pillar of the button passes through the first through hole to abut against the switch. The elastic sheet includes a body, and a plurality of first elastic arms, second elastic arms and third elastic arms. The first elastic arms extending from the body are abutting against the housing. The second elastic arms extending from an inner edge of the second through hole are engaged with the key pillar. The third elastic arms abutting against the keycap are configured to support the button and provide a restoring force that can restore the button from a pressed position to an initial position.

Abstract: A telephone device is disclosed. The telephone device has a base, a magnetic field generating device, an ear set, a magnetic sensor and a controller. The base has an ear set accommodating area. The magnetic field generating device situates with the base and generates a magnetic field. The ear set detachably connects with the base. The ear set has a magnetic conducted element. The magnetic sensor situates with the base for detecting the magnetic field. The magnetic field detected by the magnetic sensor is reduced due to interference of the magnetic conducted element when the ear set situates at the ear set accommodating area. The controller electronically connects with the magnetic sensor and determines whether the eat set is situated in the ear set accommodating area based on the change of the magnetic field detected by the magnetic sensor.

Abstract: A telephone device is disclosed. The telephone device has a base, a magnetic field generating device, an ear set, a magnetic sensor and a controller. The base has an ear set accommodating area. The magnetic field generating device situates with the base and generates a magnetic field. The ear set detachably connects with the base. The ear set has a magnetic conducted element. The magnetic sensor situates with the base for detecting the magnetic field. The magnetic field detected by the magnetic sensor is reduced due to interference of the magnetic conducted element when the ear set situates at the ear set accommodating area. The controller electronically connects with the magnetic sensor and determines whether the eat set is situated in the ear set accommodating area based on the change of the magnetic field detected by the magnetic sensor.

Abstract: A graphene optoelectronic detector is disclosed, which comprises: an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode are at different electrical potentials, wherein a high-drift carrier moving region is disposed between the first electrode and the second electrode, and a low-drift carrier moving region is disposed outside the high-drift carrier moving region. In addition, the present invention further provides a method for detecting photons and electromagnetic energy using the aforementioned graphene detector.

Abstract: A graphene optoelectronic detector is disclosed, which comprises: an insulating substrate with a graphene layer disposed thereon; a first electrode disposed on the graphene layer or between the graphene layer and the insulating substrate; and a second electrode disposed on the graphene layer or between the graphene layer and the insulating substrate, wherein there is a predetermined distance between the first electrode and the second electrode, and the first electrode and the second electrode are at different electrical potentials, wherein a high-drift carrier moving region is disposed between the first electrode and the second electrode, and a low-drift carrier moving region is disposed outside the high-drift carrier moving region. In addition, the present invention further provides a method for detecting photons and electromagnetic energy using the aforementioned graphene detector.

Abstract: Disclosed herein is a method for manufacturing a master plate of an optical disc. The method comprises the step of: (a) forming an inorganic resist layer on a substrate; (b) forming an organic photoresist layer on and in contact with the inorganic resist layer; (c) irradiating both the organic photoresist layer and the inorganic resist layer with a laser beam to form a first exposed region of the inorganic resist layer and a second exposed region of the organic photoresist layer; (d) removing the inorganic resist layer of the first exposed region and the organic photoresist layer of the second exposed region; (e) removing the patterned organic photoresist layer from the patterned inorganic resist layer; (f) conformally forming a release layer to cover the patterned inorganic resist layer; (g) plating a metal layer on the release layer; and (h) separating the metal layer and the release layer.

Abstract: Disclosed herein is a nano-fabrication method, which includes the step of: (a) forming an inorganic resist layer on a substrate; (b) forming an organic photoresist layer on the inorganic resist layer; (c) irradiating both the organic photoresist layer and the inorganic resist layer with a laser beam to form a first exposed region of the inorganic resist layer and a second exposed region of the organic photoresist layer; (d) removing the inorganic resist layer of the first exposed region and the organic photoresist layer of the second exposed region to form a patterned inorganic resist layer and a patterned organic photoresist layer; and (e) removing the patterned organic photoresist layer from the patterned inorganic resist layer.

Abstract: The method prevents an optical disk from being scraped by an optical apparatus of a pickup head of an optical disc drive is disclosed, it mainly includes: moving the optical apparatus of the pickup head to a detection position in which the laser-light emitted from the pickup head focuses on the optical disk; detecting the first-detection position and setting a movement boundary according to the first-detection position, wherein the movement boundary has a upper boundary and a bottom boundary; preventing the optical apparatus from moving out of the movement boundary. The present method can be implemented without installing any additional apparatus in the original video disc player, and can prevent the optical disk and the inner apparatus of the optical disc drive from being scraped or damaged by the pickup head during a read/write process to increase the service life of the optical disk and the optical disc drive.