Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.

Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: An absorption type near-infrared filter comprising a first multilayer film, a second multilayer film, and an absorption film, wherein in the ultraviolet band, the difference of between the wavelength with the transmittance at 80% of the absorbing film and the wavelength with the reflectivity at 80% of the first multilayer film falls in the range between 25 nm and 37 nm, the difference of between the wavelength with the transmittance at 50% of the absorbing film and the wavelength with the reflectivity at 50% of the first multilayer film falls in the range between 6 nm and 14 nm, and the difference of between the wavelength with the transmittance at 20% of the absorbing film and the wavelength with the reflectivity at 20% of the first multilayer film falls in the range between ?6 nm and 2.5 nm.

Abstract: A panel device including a substrate, a conductor pad, a turning wire, and a circuit board is provided. The substrate has a first surface and a second surface connected to the first surface while a normal direction of the second surface is different from a normal direction of the first surface. The conductor pad is disposed on the first surface of the substrate. The turning wire is disposed on the substrate and extends from the first surface to the second surface. The turning wire includes a wiring layer in contact with the conductor pad and a wire covering layer covering the wiring layer. The circuit board is bonded to and electrically connected to the wire covering layer. A manufacturing method of a panel device is also provided herein.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of light-emitting elements on a first substrate and forming a first pattern array on a second substrate, wherein the first pattern array includes an adhesive layer. The method also includes transferring the plurality of light-emitting elements from the first substrate to the second substrate and forming the first pattern array on a third substrate. The method includes transferring the plurality of light-emitting elements from the second substrate to the third substrate, and reducing an adhesion force of a portion of the adhesive layer. The method also includes forming a second pattern array on a fourth substrate, and transferring the plurality of light-emitting elements from the third substrate to the fourth substrate. The pitch between the plurality of light-emitting elements on the first substrate is different than the pitch of the first pattern array.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes forming a plurality of diodes on a first substrate and forming a first pattern array on a second substrate. The method also includes transferring the plurality of diodes from the first substrate to the second substrate. The method further includes forming the first pattern array on a third substrate. In addition, the method includes transferring the plurality of diodes from the second substrate to the third substrate. The method also includes forming a second pattern array on a fourth substrate. The method further includes transferring the plurality of diodes from the third substrate to the fourth substrate. The pitch between the plurality of diodes on the first substrate is different from the pitch of the first pattern array.

Abstract: An absorption type near-infrared filter comprising a first multilayer film, a second multilayer film, and an absorption film, wherein in the ultraviolet band, the difference of between the wavelength with the transmittance at 80% of the absorbing film and the wavelength with the reflectivity at 80% of the first multilayer film falls in the range between 25 nm and 37 nm, the difference of between the wavelength with the transmittance at 50% of the absorbing film and the wavelength with the reflectivity at 50% of the first multilayer film falls in the range between 6 nm and 14 nm, and the difference of between the wavelength with the transmittance at 20% of the absorbing film and the wavelength with the reflectivity at 20% of the first multilayer film falls in the range between ?6 nm and 2.5 nm.

Abstract: An absorption type near-infrared filter comprising a first multilayer film, a second multilayer film, and an absorption film comprising an infrared absorbing dye with a weight percentage between 1% and 3%, wherein in the infrared band, the difference between the wavelength with the transmittance at 80% of the absorption film and the wavelength with the reflectivity at 80% of the first multilayer film ranges between 130 nm and 145 nm; the difference between the wavelength with the transmittance at 50% of the absorption film and the wavelength with the reflectivity at 50% of the first multilayer film ranges between 75 nm and 90 nm; the difference between the wavelength with the transmittance at 20% of the absorption film and the wavelength with the reflectivity at 20% of the first multilayer film ranges between 25 nm and 45 nm.

Abstract: An absorption type near-infrared filter comprising a first multilayer film, a second multilayer film, and an absorption film comprising an infrared absorbing dye with a weight percentage between 1% and 3%, wherein in the infrared band, the difference between the wavelength with the transmittance at 80% of the absorption film and the wavelength with the reflectivity at 80% of the first multilayer film ranges between 130 nm and 145 nm; the difference between the wavelength with the transmittance at 50% of the absorption film and the wavelength with the reflectivity at 50% of the first multilayer film ranges between 75 nm and 90 nm; the difference between the wavelength with the transmittance at 20% of the absorption film and the wavelength with the reflectivity at 20% of the first multilayer film ranges between 25 nm and 45 nm.

Abstract: The present disclosure is related to a filter, which includes a near infrared light filtering substrate, having a near infrared light absorbing dye; an absorbing layer, having a near infrared light absorbing dye and an ultraviolet light absorbing dye, and formed on one surface of the near infrared light filtering substrate; a first multi-layer film, formed on the absorbing layer; and a second multi-layer film, formed on the other surface of the near infrared light filtering substrate.