Abstract: A package component and forming method thereof are provided. The package component includes a substrate and a conductive layer. The substrate includes a first surface. The conductive layer is disposed over the first surface. The conductive layer includes a first conductive feature and a second conductive feature. The second conductive feature covers a portion of the first conductive feature. A resistance of the second conductive feature is lower than a resistance of the first conductive feature.

Abstract: The present disclosure provides methods for generating an integrated circuit (IC) layout and a semiconductor device. The method includes providing an active region in a first layer of the IC layout, disposing a gate on the active area in a second layer extending in a first direction, disposing a first conductive segment on the active area in a third layer extending in a second direction perpendicular to the first direction, and disposing a second conductive segment on the first conductive segment in a fourth layer extending in the second direction. The second conductive segment electrically connects to the first conductive segment, and a width of the first conductive segment is different than a width of the second conductive segment.

Abstract: An integrated circuit (IC) semiconductor device has a high oxide definition (OD) density region, a low OD density region adjacent to the high OD density region, and dummy cells in the high OD density region and the low OD density region to smooth a density gradient between the high OD density region and the low OD density region.

Abstract: An integrated circuit (IC) semiconductor device has a high oxide definition (OD) density region, a low OD density region adjacent to the high OD density region, and dummy cells in the high OD density region and the low OD density region to smooth a density gradient between the high OD density region and the low OD density region.

Abstract: A method of reducing an oxide definition (OD) density gradient in an integrated circuit (IC) semiconductor device having a placed layout and a set of design rule checking (DRC) rules associated with the placed layout. The method includes computing OD density in insertion regions from OD density information corresponding to the placed layout to identify an OD density gradient. The method further includes selecting and adding dummy cells to at least one insertion region to reduce the OD density gradient.

Abstract: A semiconductor device is disclosed that includes a clock signal distribution network and a logic circuitry. The clock signal distribution network is configured to receive a first power. The logic circuitry is configured to receive a second power independent from the first power.

Abstract: A method of reducing an oxide definition (OD) density gradient in an integrated circuit (IC) semiconductor device having a placed layout and a set of design rule checking (DRC) rules associated with the placed layout. The method includes computing OD density in insertion regions from OD density information corresponding to the placed layout to identify an OD density gradient. The method further includes selecting and adding dummy cells to at least one insertion region to reduce the OD density gradient.

Abstract: A semiconductor device is disclosed that includes a clock signal distribution network and a logic circuitry. The clock signal distribution network is configured to receive a first power. The logic circuitry is configured to receive a second power independent from the first power.

Abstract: Among other things, one or more systems and techniques for defining a group bounding box for related cells of an integrated circuit, and generating a new layout for the integrated circuit comprising the group bounding box are provided herein. That is, one or more group bounding boxes are defined based upon positional values of related cells. Such group bounding boxes are placed within the new layout based upon a placement technique, such as an objective function that takes into account wire length, timing, and cell density, for example. The one or more group bounding boxes are sized or reshaped to reduce cell overlap within the new layout. In this way, the new layout comprises related cells, bound by one or more group bounding boxes, that are placed within the new layout according to a configuration that mitigates wire length and timing delay of the integrated circuit.

Abstract: Among other things, one or more systems and techniques for defining a group bounding box for related cells of an integrated circuit, and generating a new layout for the integrated circuit comprising the group bounding box are provided herein. That is, one or more group bounding boxes are defined based upon positional values of related cells. Such group bounding boxes are placed within the new layout based upon a placement technique, such as an objective function that takes into account wire length, timing, and cell density, for example. The one or more group bounding boxes are sized or reshaped to reduce cell overlap within the new layout. In this way, the new layout comprises related cells, bound by one or more group bounding boxes, that are placed within the new layout according to a configuration that mitigates wire length and timing delay of the integrated circuit.