Patents by Inventor Chun-Chieh Chao

Chun-Chieh Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230052438
    Abstract: A random code generating method for the magnetoresistive random access memory is provided. Firstly, a first magnetoresistive random access memory cell and a second magnetoresistive random access memory cell are programmed into an anti-parallel state. Then, an initial value of a control current is set. Then, an enroll action is performed on the first and second magnetoresistive random access memory cells. If the first and second magnetoresistive random access memory cells fail to pass the verification action, the control current is increased by a current increment, and the step of setting the control current is performed again. If the first and second magnetoresistive random access memory cells pass the verification action, a one-bit random code is stored in the first magnetoresistive random access memory cell or the second magnetoresistive random access memory cell.
    Type: Application
    Filed: June 14, 2022
    Publication date: February 16, 2023
    Inventors: Tsung-Mu LAI, Chun-Yuan LO, Chun-Chieh CHAO
  • Patent number: 11521939
    Abstract: Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a die and a stiffener. The substrate has an upper surface. The die is disposed on the upper surface of the substrate. The stiffener is disposed on the upper surface of the substrate and surrounds the die. The stiffener has a first upper surface adjacent to the die, a second upper surface far from the die and a lateral surface extending from the first upper surface to the second upper surface. A first distance between the first upper surface of the stiffener and the upper surface of the substrate is less than a second distance between the second upper surface of the stiffener and the upper surface of the substrate.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: December 6, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Jui-Tzu Chen, Yu-Hsing Lin, Chia-Chieh Hu, Chun-Cheng Kuo, Yu-Hsiang Chao
  • Patent number: 11416416
    Abstract: A random code generator includes a differential cell array, a power supply circuit, a first selecting circuit and a current judgment circuit. The power supply circuit receives an enrolling signal and a feedback signal. The first selecting circuit receives a first selecting signal. When the enrolling signal is activated and an enrollment is performed on the first differential cell, the power supply circuit provides an enrolling voltage, and the enrolling voltage is transmitted to a first storage element and a second storage element of the first differential cell through the first selecting circuit. Consequently, the cell current is generated. When a magnitude of the cell current is higher than a specified current value, the current judgment circuit activates the feedback signal, so that the power supply circuit stops providing the enrolling voltage.
    Type: Grant
    Filed: October 23, 2019
    Date of Patent: August 16, 2022
    Assignee: EMEMORY TECHNOLOGY INC.
    Inventors: Tsung-Mu Lai, Chun-Fu Lin, Chun-Chieh Chao
  • Publication number: 20220231153
    Abstract: A device includes a semiconductor substrate, a low-k dielectric layer over the semiconductor substrate, an isolation layer over the low-k dielectric layer, and a work function layer over the etch stop layer. The work function layer is an n-type work function layer. The device further includes a low-dimensional semiconductor layer on a top surface and a sidewall of the work function layer, source/drain contacts contacting opposing end portions of the low-dimensional semiconductor layer, and a dielectric doping layer over and contacting a channel portion of the low-dimensional semiconductor layer. The dielectric doping layer includes a metal selected from aluminum and hafnium, and the channel portion of the low-dimensional semiconductor layer further comprises the metal.
    Type: Application
    Filed: January 15, 2021
    Publication date: July 21, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh Lu, Tzu Ang Chao, Chao-Ching Cheng, Lain-Jong Li
  • Publication number: 20200226073
    Abstract: A random code generator includes a differential cell array, a power supply circuit, a first selecting circuit and a current judgment circuit. The power supply circuit receives an enrolling signal and a feedback signal. The first selecting circuit receives a first selecting signal. When the enrolling signal is activated and an enrollment is performed on the first differential cell, the power supply circuit provides an enrolling voltage, and the enrolling voltage is transmitted to a first storage element and a second storage element of the first differential cell through the first selecting circuit. Consequently, the cell current is generated. When a magnitude of the cell current is higher than a specified current value, the current judgment circuit activates the feedback signal, so that the power supply circuit stops providing the enrolling voltage.
    Type: Application
    Filed: October 23, 2019
    Publication date: July 16, 2020
    Inventors: Tsung-Mu LAI, Chun-Fu LIN, Chun-Chieh CHAO
  • Patent number: 10181342
    Abstract: A method for improving a program speed of a memory includes acquiring a program level of the memory, comparing the program level of the memory with a valid level and a target level for generating a comparison result, and entering a first loop and/or a second loop for setting a program voltage of the memory according to the comparison result.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: January 15, 2019
    Assignee: eMemory Technology Inc.
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching, Chun-Chieh Chao
  • Publication number: 20180315462
    Abstract: A method for improving a program speed of a memory includes acquiring a program level of the memory, comparing the program level of the memory with a valid level and a target level for generating a comparison result, and entering a first loop and/or a second loop for setting a program voltage of the memory according to the comparison result.
    Type: Application
    Filed: November 3, 2017
    Publication date: November 1, 2018
    Inventors: Chun-Yuan Lo, Shih-Chen Wang, Wen-Hao Ching, Chun-Chieh Chao
  • Publication number: 20130326873
    Abstract: An inner-layer heat-dissipating board and a multi-chip stack package structure having the inner-layer heat-dissipating board are disclosed. The inner-layer heat-dissipating board includes a metal board body formed with a plurality of penetrating conductive through holes each comprising a plurality of nano wires and an oxidative block having nano apertures filled with the nano wires. The multi-chip stack package structure includes a first chip and an electronic component respectively disposed on the inner-layer heat-dissipating board to thereby facilitate heat dissipation in the multi-chip stack structure as well as increase the overall package rigidity.
    Type: Application
    Filed: August 12, 2013
    Publication date: December 12, 2013
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Huei-Nuan Huang, Pin-Cheng Huang, Chun-Hung Lu, Chun-Chieh Chao, Chi-Hsin Chiu
  • Patent number: 8520391
    Abstract: An inner-layer heat-dissipating board and a multi-chip stack package structure having the inner-layer heat-dissipating board are disclosed. The inner-layer heat-dissipating board includes a metal board body formed with a plurality of penetrating conductive through holes each comprising a plurality of nano wires and an oxidative block having nano apertures filled with the nano wires. The multi-chip stack package structure includes a first chip and an electronic component respectively disposed on the inner-layer heat-dissipating board to thereby facilitate heat dissipation in the multi-chip stack structure as well as increase the overall package rigidity.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: August 27, 2013
    Assignee: Siliconware Precision Industries Co., Ltd.
    Inventors: Huei-Nuan Huang, Pin-Cheng Huang, Chun-Hung Lu, Chun-Chieh Chao, Chi-Hsin Chiu
  • Publication number: 20120299177
    Abstract: A semiconductor component structure is provided, which includes a body formed with openings, an insulating layer formed on surfaces of the body and the openings, conductive bumps formed in the openings, and a re-distributed circuit formed by conductive traces electrically connecting the conductive bumps, wherein the conductive traces are formed on a portion of the insulating layer on the body. As the conductive traces and the conductive bumps are formed on and in the body prior to the formation of the re-distributed circuit. The process for fabricating the semiconductor component structure is simplified and the reliability of the semiconductor component structure is enhanced. A method for fabricating the semiconductor component is also provided.
    Type: Application
    Filed: September 23, 2011
    Publication date: November 29, 2012
    Applicant: Siliconware Precision Industries Co., Ltd.
    Inventors: Chun Chieh Chao, Chun Hung Lu
  • Publication number: 20120224328
    Abstract: An inner-layer heat-dissipating board and a multi-chip stack package structure having the inner-layer heat-dissipating board are disclosed. The inner-layer heat-dissipating board includes a metal board body formed with a plurality of penetrating conductive through holes each comprising a plurality of nano wires and an oxidative block having nano apertures filled with the nano wires. The multi-chip stack package structure includes a first chip and an electronic component respectively disposed on the inner-layer heat-dissipating board to thereby facilitate heat dissipation in the multi-chip stack structure as well as increase the overall package rigidity.
    Type: Application
    Filed: May 20, 2011
    Publication date: September 6, 2012
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Huei-Nuan Huang, Pin-Cheng Huang, Chun-Hung Lu, Chun-Chieh Chao, Chi-Hsin Chiu
  • Publication number: 20120168936
    Abstract: A multi-chip stack package structure includes: an inner-layer heat sink having a first surface and a second surface opposing one another and having a plurality of conductive vias penetrating the first surface and the second surface; a first chip disposed on the first surface of the inner-layer heat sink; and a second chip disposed on the second surface of the inner-layer heat sink. Thereby, a heat-dissipating path is provided within inner-layers of the multi-chip stack package structure, and the rigidity of the overall structure is enhanced.
    Type: Application
    Filed: September 23, 2011
    Publication date: July 5, 2012
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Pin-Cheng Huang, Chun-Chieh Chao, Chi-Hsin Chiu
  • Patent number: 7522008
    Abstract: An injection locked frequency divider includes a ring oscillator, a first injection unit and a second injection unit. The ring oscillator includes a first delay cell and a second delay cell each including differential input terminals and differential output terminals. The differential input terminals and the differential output terminals of the first delay cell are respectively coupled to the differential output terminals and the differential input terminals of the second delay cell. The first injection unit connected between the differential output terminals of the first delay cell receives and injects a first injection signal to the differential output terminals of the first delay cell. The second injection unit connected between the differential output terminals of the second delay cell receives and injects a second injection signal to the differential output terminals of the second delay cell.
    Type: Grant
    Filed: August 21, 2007
    Date of Patent: April 21, 2009
    Assignee: National Taiwan University of Science & Technology
    Inventors: Sheng-Lyang Jang, Chun-Chieh Chao, Yun-Hsueh Chang, Shao-Hwa Lee
  • Publication number: 20080231379
    Abstract: An injection locked frequency divider includes a ring oscillator, a first injection unit and a second injection unit. The ring oscillator includes a first delay cell and a second delay cell each including differential input terminals and differential output terminals. The differential input terminals and the differential output terminals of the first delay cell are respectively coupled to the differential output terminals and the differential input terminals of the second delay cell. The first injection unit connected between the differential output terminals of the first delay cell receives and injects a first injection signal to the differential output terminals of the first delay cell. The second injection unit connected between the differential output terminals of the second delay cell receives and injects a second injection signal to the differential output terminals of the second delay cell.
    Type: Application
    Filed: August 21, 2007
    Publication date: September 25, 2008
    Applicant: National Taiwan University of Science and Technology
    Inventors: Sheng-Lyang Jang, Chun-Chieh Chao, Yun-Hsueh Chuang, Shao-Hwa Lee