Abstract: The present disclosure describes a semiconductor device having a contact structure isolated from a source/drain structure. The semiconductor structure includes a gate structure on a substrate, first and second source/drain (S/D) structures on opposite sides of the gate structure, an isolation layer on the second S/D structure, a third S/D structure adjacent to and separate from the second S/D structure, and a S/D contact structure on the isolation layer and the third S/D structure. The isolation layer separates the S/D contact structure from the second S/D structure.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: A protocol conversion circuit and a protocol conversion method are provided. The protocol conversion circuit includes a DisplayPort™ (DP) receiver, a control analysis circuit, a downstream transmitter and a frame buffer. The DP receiver analyzes a DP signal to obtain video data and packet information. The control analysis circuit determines whether the packet information indicates that a live function or a panel replay (PR) function is activated, and controls, in response to determining that the live function is activated, the frame buffer to store received current video data and transmits it to the downstream transmitter; and controls the frame buffer to discard the received current video data, or update previous video data stored in the frame buffer with a specified range in the current video data, and sends latest video data to the downstream transmitter, so as to output a target signal to the second electronic device.

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

Abstract: The invention relates to a vehicle, preferably a bicycle, in particular an electric bicycle. The invention also relates to an optical feedback unit for use in a vehicle, preferably a bicycle, in particular an electric bicycle according to the invention. The invention further relates to a vehicle control unit, in particular a bicycle control unit, programmed to control at least one optical feedback unit for use in a vehicle, preferably a bicycle, in particular an electric bicycle according to the invention. The invention moreover relates to an assembly of at least one optical feedback unit according to the invention and at least one vehicle control unit, in particular a bicycle control unit, according to the invention.

Abstract: Buffing of a footwear component allows for an alteration of the component surface to achieve an intended surface for aesthetics and/or manufacturing purposes. The buffing is performed in a system having a vision module, a sidewall buffing module, an up surface buffing module, and a down surface buffing module. Each of the buffing modules are adapted for the unique shape and sizes of a footwear component to effectively and automatically buff the footwear component.

Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.

Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to a drive transistor, a data loading transistor, a first capacitor for storing data charge, and a second capacitor. During a data programming phase, the data loading transistor may be activated to load in a data value onto the first capacitor. After the data programming phase, the second capacitor may be configured to receive a lower voltage, which extends a threshold voltage sampling time for the pixel. Configured and operated in this way, the temperature luminance sensitivity of the display can be reduced.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: Embodiments of the present disclosure provide a method for forming backside metal contacts with reduced Cgd and increased speed. Particularly, source/drain features on the drain side, or source/drain features without backside metal contact, are recessed from the backside to the level of the inner spacer to reduce Cgd. Some embodiments of the present disclosure use a sacrificial liner to protect backside alignment feature during backside processing, thus, preventing shape erosion of metal conducts and improving device performance.

Abstract: An exposure tool is configured to remove contaminants and/or prevent contamination of mirrors and/or other optical components included in the exposure tool. In some implementations, the exposure tool is configured to flush and/or otherwise remove contaminants from an illuminator, a projection optics box, and/or one or more other subsystems of the exposure tool using a heated gas such as ozone (O3) or extra clean dry air (XCDA), among other examples. In some implementations, the exposure tool is configured to provide a gas curtain (or gas wall) that includes hydrogen (H2) or another type of gas to reduce the likelihood of contaminants reaching the mirrors included in the exposure tool. In this way, the mirrors and one or more other components of the exposure tool are cleaned and maintained in a clean environment in which radiation absorbing contaminants are controlled to increase the performance of the exposure tool.

Abstract: A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.

Abstract: A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.

Abstract: A semiconductor structure includes: a first conductive layer arranged over a substrate; a dielectric layer arranged over the first conductive layer; a second conductive layer arranged within the dielectric layer and electrically connected to the first conductive layer, the second conductive layer including a sidewall distant from the dielectric layer by a width; and a first blocking layer over a surface of the first conductive layer between the second conducive layer and the dielectric layer. The first blocking layer includes at least one element of a precipitant.

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.

Abstract: A heat dissipation system of an electronic device including a body, a plurality of heat sources disposed in the body, and at least one centrifugal heat dissipation fan disposed in the body is provided. The centrifugal heat dissipation fan includes a housing and an impeller disposed in the housing on an axis. The housing has at least one inlet on the axis and has a plurality of outlets in different radial directions, and the plurality of outlets respectively correspond to the plurality of heat sources.

Abstract: An integrated circuit includes a transistor having a plurality of stacked channels. The transistor includes a source/drain region in contact with the channel regions. The transistor includes a silicide in contact with the top of the source/drain region and extending vertically along a sidewall of the silicide. A source/drain contact is in contact with a top of the silicide and extending vertically along a sidewall of the silicide.

Abstract: A thin film transistor may be manufactured by forming a gate electrode in an insulating layer over a substrate, forming a gate dielectric over the gate electrode and the insulating layer, forming an active layer over the gate electrode, and forming a source electrode and a drain electrode contacting a respective portion of a top surface of the active layer. A surface oxygen concentration may be increased in at least one of the gate dielectric and the active layer by introducing oxygen atoms into a surface region of a respective one of the gate dielectric and the active layer.

Abstract: Semiconductor devices and methods of forming the same are provided. An exemplary semiconductor device according to the present disclosure includes a first gate structure disposed over a first backside dielectric feature, a second gate structure disposed over a second backside dielectric feature, and a gate cut feature extending continuously from laterally between the first gate structure and the second gate structure to laterally between the first backside dielectric feature and the second backside dielectric feature. The gate cut feature includes an air gap laterally between the first gate structure and the second gate structure.

Abstract: A method for manufacturing a semiconductor structure includes forming first and second fins over a substrate. The fin includes first and second semiconductor layers alternating stacked. The method further includes forming a dummy gate structure over the first and second fins, forming first source/drain features on opposite sides of the dummy gate structures and over the first fin, forming second source/drain features on opposite sides of the dummy gate structures and over the second fin, forming a dielectric layer over and between the first and second source/drain features, replacing the dummy gate structure and the first semiconductor layers with a gate structure wrapping around the first semiconductor layers, forming first silicide features over the first source/drain features, and forming second silicide features over the second source/drain features.