Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Abstract: In a method of manufacturing a photo mask, a resist layer is formed over a mask blank, which includes a mask substrate, a phase shift layer disposed on the mask substrate and a light blocking layer disposed on the phase shift layer. A resist pattern is formed by using a lithographic operation. The light blocking layer is patterned by using the resist pattern as an etching mask. The phase shift layer is patterned by using the patterned light blocking layer as an etching mask. A border region of the mask substrate is covered with an etching hard cover, while a pattern region of the mask substrate is opened. The patterned light blocking layer in the pattern region is patterned through the opening of the etching hard cover. A photo-etching operation is performed on the pattern region to remove residues of the light blocking layer.

Abstract: A multi-electrode conductive probe, a manufacturing method of insulating trenches and a measurement method using the multi-electrode conductive probe are disclosed. The conductive probe includes a base, a plurality of support elements, a plurality of tips and a conductive layer. The base has a surface and a plurality of protrusions. The protrusions are configured on the surface in a spacing manner, and an insulating trench is disposed between the two adjacent protrusions. The support elements are disposed at the base and protrude from the base. The tips are disposed on the end of the support elements away from the base. The conductive layer covers the surface of the base, the protrusions, the support elements and the tips. Portions of the conductive layer on the two adjacent support elements are electrically insulated from each other by at least an insulating trench.

Abstract: A multi-electrode conductive probe, a manufacturing method of insulating trenches and a measurement method using the multi-electrode conductive probe are disclosed. The conductive probe includes a base, a plurality of support elements, a plurality of tips and a conductive layer. The base has a surface and a plurality of protrusions. The protrusions are configured on the surface in a spacing manner, and an insulating trench is disposed between the two adjacent protrusions. The support elements are disposed at the base and protrude from the base. The tips are disposed on the end of the support elements away from the base. The conductive layer covers the surface of the base, the protrusions, the support elements and the tips. Portions of the conductive layer on the two adjacent support elements are electrically insulated from each other by at least an insulating trench.