Patents by Inventor Chun-Chien Lin

Chun-Chien Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • THERMALLY STABLE COPPER-ALLOY ADHESION LAYER FOR METAL INTERCONNECT STRUCTURES AND METHODS FOR FORMING THE SAME
    Publication number: 20240350289
    Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.
    Type: Application
    Filed: June 28, 2024
    Publication date: October 24, 2024
    Inventors: Cheng-Lun TSAI, Huei-Wen HSIEH, Chun-Sheng CHEN, Kai-Shiang KUO, Jen-Wei LIU, Cheng-Hui WENG, Chun-Chien LIN, Hung-Wen SU
  • THERMALLY STABLE COPPER-ALLOY ADHESION LAYER FOR METAL INTERCONNECT STRUCTURES AND METHODS FOR FORMING THE SAME
    Publication number: 20220367262
    Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.
    Type: Application
    Filed: July 25, 2022
    Publication date: November 17, 2022
    Inventors: Cheng-Lun TSAI, Huei-Wen HSIEH, Chun-Sheng CHEN, Kai-Shiang KUO, Jen-Wei LIU, Cheng-Hui WENG, Chun-Chien LIN, Hung-Wen SU
  • MRAM device having low-k inter-metal dielectric
    Patent number: 6946698
    Abstract: A magnetic random access memory (MRAM) device including a magnetic tunneling junction (MTJ) stack separated from one or more proximate conductive layers and/or one or more proximate MTJ stacks by a low-k dielectric material.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: September 20, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Chun-Chien Lin