Abstract: A method for manufacturing a composite layer circuit structure of an electronic device is provided. First, a first conductive layer is formed on a carrier plate. Next, a first photoresist layer is formed on the first conductive layer. The first photoresist layer includes multiple first openings exposing part of the first conductive layer. Next, a first electroplating layer is formed in the first openings. Then, the first photoresist layer is removed. Then, a first insulating layer is formed on the first conductive layer. The first insulating layer includes multiple second openings exposing part of the first electroplating layer. In the above, at least one heat treatment process is performed on the first electroplating layer before the first insulating layer is formed on the first conductive layer. A temperature when performing at least one heat treatment process is higher than or equal to 40° C. and lower than or equal to 300° C.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes: a first insulating layer; a first metal bump disposed on the first insulating layer; and a second insulating layer disposed on the first metal bump, wherein the second insulating layer includes a first opening exposing a portion of the first metal bump, wherein a thickness of the first insulating layer is greater than a thickness of the second insulating layer.

Abstract: An electronic device is provided. The electronic device includes a substrate, a plurality of thin-film transistors disposed on the substrate, and a plurality of light-emitting units. One of the light-emitting units has an encapsulating glue and at least one light-emitting chip. The encapsulating glue is disposed on the light-emitting chip, and the light-emitting unit is electrically connected to at least one of the thin-film transistors.